A method for direct synthesis of iron-doped zinc sulfide bulk material by solid-state reaction

Abstract

The invention discloses a method for directly synthesizing iron-doped zinc sulfide blocks by solid-state reaction, using zinc sulfide and ferrous sulfide to weigh according to the doping ratio, grinding and mixing uniformly as starting materials; pressing the mixture powder into a cylinder, The end face is covered with a sulfur powder disc and sealed into a platinum-graphite double sample chamber to make a sample, and placed in an h-BN tube, with h-BN as the pressure transmission medium; high-temperature and high-pressure reaction is carried out in a six-sided top press , take out the reacted cylindrical sample, grind and polish it, ultrasonically clean it, air-dry it, and store it in an inert gas atmosphere. The density of the obtained iron-doped zinc sulfide block is close to the theoretical density, showing a standard cylindrical shape, which can be directly used for the test of semiconductor properties. In addition, the raw material ferrous sulfide is replaced by nickel sulfide or cobalt sulfide, and nickel-doped zinc sulfide will be produced. Or cobalt-doped zinc sulfide and other derivatives can study the semiconductor properties of zinc sulfide with more doped components.

Description

technical field [0001] The invention relates to a method for directly synthesizing iron-doped zinc sulfide blocks by solid phase reaction, which belongs to the field of material science research. Background technique [0002] In the research field of semiconductor materials, iron-doped zinc sulfide Zn 1-x Fe x S is considered to be an excellent room temperature ferromagnetic semiconductor. The chemical properties and atomic structure of ZnS are comparable to zinc oxide. However, some properties of ZnS are unique and advantageous compared to zinc oxide. For example, the bandgap of cubic zinc sulfide ZnS (3.72eV) is much larger than that of ZnO (3.4eV), which makes ZnS more suitable for devices based on visible-blind ultraviolet light, such as sensors and photodetectors. At the same time, it has large exciton binding energy and high refractive index, and is a semiconductor for preparing electroluminescent devices. while Fe 2+ , Mn 2+ 、Co 2+ Doping ZnS with isomagnetic ...

AI Technical Summary

Problems solved by technology

However, for the quantitative study of semiconductor materials in the field of materials science, the disadvantage of natural beneficiation is that the purity of natural sphalerite cannot be guaranteed and the composition cannot be controlled. Similar in appearance, very difficult to choose

At the same time, even if purer particles are selected from the paragenetic mineral aggregates, most of the inclusions of the paragenetic minerals are at the micron level, which is difficult to identify through mineral phase mirror dressing

(2) Natural sphalerite is affected by the formation environment, and the iron content varies in a large range, often accompanied by trace substitutions of various elements, which makes the chemical composition uncontrollable

Therefore, although the vacuum tube can avoid the oxidation of sulfide, because the open system cannot solve the problems of desulfurization reaction and sulfur volatilization, it is actually difficult to carry out the solid-state reaction according to the ideal ratio of sulfide, and the purity of the product cannot be guaranteed.