Preparation method and preparation device of bismuth telluride-based thermoelectric material

A thermoelectric material, bismuth telluride-based technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, etc., can solve the problems of expensive instruments, high energy consumption, complex process, etc., achieve short preparation time, The effect of low equipment requirements and simple process

Pending Publication Date: 2021-06-04
BEIJING INFORMATION SCI & TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at at least solving the problems of long bismuth telluride preparation cycle, complex process, large energy consumption and expensive instruments in the prior art.

Method used

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  • Preparation method and preparation device of bismuth telluride-based thermoelectric material
  • Preparation method and preparation device of bismuth telluride-based thermoelectric material
  • Preparation method and preparation device of bismuth telluride-based thermoelectric material

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preparation example Construction

[0053] refer to figure 1 , the first aspect of the present invention provides a method for preparing a bismuth telluride-based thermoelectric material. The preparation device for a bismuth telluride-based thermoelectric material includes: a mold assembly, the mold assembly has a forming hole with an insulating inner wall; a conductive voltage head, a conductive voltage head It has an indenter column, the outer diameter of the indenter column is equal to the inner wall of the forming hole; the power supply component and the pressurized component; the method includes: pressing Bi, Te, Se powder into Bi 2 Te 3-x Se x The stoichiometric ratio weighs the ingredients and grinds them evenly, where 0≤x≤3; arrange the ground powder in the forming hole to form the following structure: the pressure head columns of the two conductive pressure heads are embedded in the two ends of the forming hole, and the grinding The finished powder is located in the forming hole and between the two co...

Embodiment 1

[0087] Using Bi, Te, Se powder as raw materials, according to Bi 2 Te 2.7 Se 0.3 Stoichiometric ratio Weigh the ingredients and mix them with an agate mortar for 30 minutes to achieve uniformity. Roll up the mica paper with a thickness of 0.15mm and put it into the mold hole. The length of the mica paper is slightly larger than the height of the mold to form the forming hole.

[0088] Then put the lower conductive pressure head and the graphite paper with a thickness of 0.2mm successively, put the powder raw material into the mold, further put the graphite paper with a thickness of 0.2mm and the upper conductive pressure head, and apply an axial pressure of 20MPa with a tablet press , release the pressure after holding the pressure for 5 minutes; connect the conductive head to the power supply, the preset voltage is 10V, and the current density is 8A / cm 2 , output an electric field to the sample, energize at a preset current density for 5s in a constant current state, and e...

Embodiment 2

[0090] Using Bi, Te, Se powder as raw materials, according to Bi 2 Te 2.7 Se 0.3 Stoichiometric ratio Weigh the ingredients and mix them with an agate mortar for 30 minutes to achieve uniformity. Roll up the mica paper with a thickness of 0.15mm and put it into the mold hole. The length of the mica paper is slightly larger than the height of the mold to form the forming hole.

[0091] Then put the lower conductive pressure head and the graphite paper with a thickness of 0.2mm successively, put the powder raw material into the mold, further put the graphite paper with a thickness of 0.2mm and the upper conductive pressure head, and apply an axial pressure of 1.5MPa with a tablet machine. Pressure, release the pressure after holding the pressure for 5 minutes; connect the conductive pressure head to the power supply, the preset voltage is 10V, and the current density is 25A / cm 2 , output an electric field to the sample, energize at a preset current density for 2s in a constan...

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Abstract

The invention relates to the technical field of thermoelectric materials, in particular to a preparation method and a preparation device of a bismuth telluride-based thermoelectric material. The method comprises the following steps: weighing Bi powder, Te powder and Se powder according to the stoichiometric ratio of Bi2Te3-xSex, and uniformly grinding; in a forming hole, embedding pressing head columns of two conductive pressing heads into the two ends of the forming hole, locating the ground powder in the forming hole and between the two conductive pressing heads, and separating the ground powder from guide pressing heads through graphite paper; applying pressure to the guide pressing heads, and maintaining the pressure for a first preset time; connecting a wiring terminal of a power supply assembly with the two conductive pressing heads; and controlling the power supply assembly to be electrified for second preset time at preset voltage and preset current density. Therefore, the bismuth telluride-based thermoelectric material is short in preparation time, simple in process and low in equipment requirement, high-temperature sintering is not needed, and rapid large-scale batch preparation can be realized.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a preparation method and a preparation device of a bismuth telluride-based thermoelectric material. Background technique [0002] Thermoelectric conversion technology is a new energy technology that can realize direct mutual conversion between thermal energy and electrical energy. It mainly uses the Seebeck effect and Peltier effect of thermoelectric materials to complete thermoelectric power generation and thermoelectric cooling respectively. The thermoelectric properties of materials can be evaluated by the dimensionless thermoelectric figure of merit ZT (ZT=S 2 σT / κ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and κ is the thermal conductivity). Thermoelectric devices based on thermoelectric materials can use temperature difference to generate electricity, and can also cool components when energized. Th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/18
CPCH10N10/853H10N10/01
Inventor 张志伟秦雷
Owner BEIJING INFORMATION SCI & TECH UNIV
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