Enhanced GaN-based high electron mobility transistor and preparation method thereof

Abstract

The invention discloses an enhanced GaN-based high-electron-mobility transistor, which sequentially comprises a substrate layer, a GaN buffer layer, an AlGaN potential barrier layer, a p-GaN layer, a Ga2O3 layer, a source electrode, a drain electrode and a gate electrode from bottom to top, wherein the length and the width of the Ga2O3 layer are consistent with those of the p-GaN layer, the source electrode and the drain electrode are disposed on the AlGaN barrier layer, and the gate electrode is arranged on the Ga2O3 layer, is consistent with the Ga2O3 layer in length and width, and is used for separating the source electrode from the drain electrode. The invention further discloses a preparation method. In the HEMT device structure, due to the spontaneous polarization and piezoelectric polarization effects of the GaN material, 2DEG can be formed between the GaN layer and the AlGaN layer; when the bias voltage is zero, the p-GaN layer can exhaust the 2DEG in the channel, so that the device obtains enhanced performance; gallium oxide and p-GaN form a p-n junction under the gate, and the p-n junction and the gate jointly regulate and control channel carriers; the forward threshold voltage of the device is improved; the gate breakdown voltage of the device is improved; and the off-state leakage current of the device is reduced.

Description

technical field [0001] The invention relates to an enhanced GaN-based high electron mobility transistor and a preparation method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Group III nitride semiconductor materials are the third-generation semiconductor materials. They have large band gap, high electron saturation velocity, high temperature resistance, high voltage resistance, and radiation resistance. They are ideal materials for the preparation of power electronic devices. GaN-based high-mobility transistors (HEMTs) have broader application prospects in high-temperature, high-frequency, and high-power fields than power electronic devices based on Si and GaAs materials. AlGaN / GaN heterojunction is the basic structure of GaN-based HEMT devices. Due to the unique spontaneous polarization and piezoelectric polarization effects of GaN materials, a high concentration of two-dimensional electron gas (2DEG) naturally exists in ...

AI Technical Summary

Problems solved by technology

However, GaN materials inevitably have defects during the growth process, and these defects will affect the performance of HEMT devices

The threshold voltage of traditional p-GaN gate structure HETM devices is low, and there is room for improvement in gate breakdown voltage, and due to the existence of defects, there will be off-state leakage current, thereby reducing device performance

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