Brazing method for silicon carbide ceramics

A technology of silicon carbide ceramics and brazing method, which is applied in the direction of welding equipment, manufacturing tools, metal processing equipment, etc., and can solve the problems of intensified reaction between aluminum and silicon carbide ceramics, low bonding strength of brazed joints, and insignificant improvement of wettability etc. to reduce costs, achieve firm bonding, and improve wettability

Active Publication Date: 2021-06-18
浙江浙能兰溪发电有限责任公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the poor wettability of metal aluminum liquid to the surface of silicon carbide ceramics, the bonding strength of the brazing joint of aluminum brazing silicon carbide ceramics is low, and increasing the brazing temperature will intensify the reaction between aluminum and silicon carbide ceramics, resulting in brittleness. Reactive phase Al 4 C 3 corrosion of the ceramic substrate
The traditional method of improving aluminum brazing is mainly to add active elements such as Si and Mg to Al-based solder, which can inhibit the interface chemical reaction between aluminum and silicon carbide to a certain extent, but the improvement of wettability is not obvious.

Method used

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  • Brazing method for silicon carbide ceramics
  • Brazing method for silicon carbide ceramics
  • Brazing method for silicon carbide ceramics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A brazing method for silicon carbide ceramics, comprising the steps of:

[0043] Step S1, metallographically polish the silicon carbide ceramics with 400 mesh, 800 mesh or 1000 mesh sandpaper on a metallographic grinder until the surface is smooth; then use diamond abrasive paste with a particle size of 1 μm to perform mechanical polishing until the surface is bright; polish The finished silicon carbide ceramics were ultrasonically cleaned in acetone solution for 20 minutes, put into an oven, heated to 80°C and kept warm for 60 minutes;

[0044]Step S2, place the silicon carbide ceramics dried in step S1 in the vacuum chamber of a vacuum magnetron sputtering coating machine equipped with a Ni target and an Al target, and wait until the vacuum degree is evacuated to 5×10 -3 After Pa, feed Ar gas with a purity of 99.999% into the vacuum chamber, keep the pressure at 0.6 Pa, then turn on the Ni target (purity is 99.99%) power supply, adjust the working voltage to 300V, the...

Embodiment 2

[0050] A brazing method for silicon carbide ceramics, comprising the steps of:

[0051] Step S1, metallographically polish the silicon carbide ceramics with 400 mesh, 800 mesh or 1000 mesh sandpaper on a metallographic grinder until the surface is smooth; then use diamond abrasive paste with a particle size of 1 μm to perform mechanical polishing until the surface is bright; polish The finished SiC ceramics were ultrasonically cleaned in acetone solution for 20 minutes, then placed in an oven and heated to 100°C for 80 minutes;

[0052] Step S2, placing the silicon carbide ceramics dried in step S1 in the chamber of the vacuum evaporation equipment, and placing the metal Ti target (purity: 99.99%) and the metal Al target (purity: 99.99%) to be evaporated in the evaporation source On, vacuum up to 4×10 -3 After Pa, vapor deposition is carried out. The specific process is: first heat the silicon carbide ceramic sheet to 350°C, keep it warm for 10 minutes, then turn on the heat...

Embodiment 3

[0056] A brazing method for silicon carbide ceramics, comprising the steps of:

[0057] Step S1, metallographically polish the silicon carbide ceramics with 400 mesh, 800 mesh or 1000 mesh sandpaper on a metallographic grinder until the surface is smooth; then use diamond abrasive paste with a particle size of 1 μm to perform mechanical polishing until the surface is bright; polish The finished silicon carbide ceramics were ultrasonically cleaned in acetone solution for 20 minutes, then placed in an oven and heated to 80°C for 60 minutes;

[0058] Step S2, place the silicon carbide ceramics dried in step S1 in the chamber of the arc ion plating equipment, use Zr target and Al target respectively, and wait for the vacuum degree to be 4×10 -3 Pass into the Ar gas that purity is 99.999% in the vacuum chamber behind Pa, keep pressure and be 0.2Pa, then open Zr target (purity is 99.99%) power supply, adopt arc current to be 70A and pulse negative bias to be 200V, deposition tempera...

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Abstract

The invention discloses a brazing method for silicon carbide ceramics. The brazing method comprises the following steps: carrying out surface treatment on the silicon carbide ceramics; depositing a first metal layer on the surface of the silicon carbide ceramics by adopting a vapor deposition method, and then depositing a second metal layer on the surface of the first metal layer to obtain the silicon carbide ceramics deposited with double metal layers, wherein the material of the first metal layer is selected from one of Ni, Ti, Fe or Zr, and material of the second metal layer is selected from Al; placing the silicon carbide ceramics needing to be connected in a vacuum sintering furnace, then placing a pure Al foil between the silicon carbide ceramics needing to be connected, starting heating when vacuum in the furnace reaches 10 <-1 > Pa, increasing the temperature to 600-800 DEG C, and conducting heat preservation for 10-60 min; and after heat preservation is finished, performing cooling to room temperature along with the furnace to obtain the silicon carbide ceramics subjected to brazing connection. According to the brazing method for the silicon carbide ceramics, the wettability of aluminum-based brazing filler metal to the silicon carbide material can be improved, the brazing temperature can be reduced, and the bonding strength of a brazed joint can be improved.

Description

technical field [0001] The invention relates to the technical field of brazing of silicon carbide ceramics, in particular to a brazing method of silicon carbide ceramics. Background technique [0002] Silicon carbide ceramics have many excellent properties such as high temperature resistance, wear resistance, good thermal conductivity, excellent corrosion resistance and high mechanical strength, and have broad application prospects in the fields of nuclear industry, aerospace, military industry, automobile industry and electronics industry. At present, the connection methods of silicon carbide ceramics mainly include mechanical connection, bonding, active metal diffusion welding and metal brazing. Advantages become an important way of connection between silicon carbide ceramics. [0003] Due to the poor wettability of metal aluminum liquid to the surface of silicon carbide ceramics, the bonding strength of the brazing joint of aluminum brazing silicon carbide ceramics is lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/20B23K1/00C04B37/00
CPCB23K1/20B23K1/00B23K1/0008C04B37/00
Inventor 麻建中岳建岭朱新平余程杨炯黄友桥周伟龙潘雷鸣贺建良季周盈
Owner 浙江浙能兰溪发电有限责任公司
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