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A reaction device and preparation method of high-purity silicon carbide particles

A high-purity silicon carbide and reaction device technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve problems such as the inability to meet the growth requirements of semi-insulating silicon carbide single crystals

Active Publication Date: 2021-08-20
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, carbon powder and silicon powder as raw materials are easy to introduce other impurities, especially nitrogen adsorbed in carbon powder, and the obtained silicon carbide raw powder often cannot meet the growth requirements of semi-insulating silicon carbide single crystal due to its high concentration of nitrogen.

Method used

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  • A reaction device and preparation method of high-purity silicon carbide particles
  • A reaction device and preparation method of high-purity silicon carbide particles
  • A reaction device and preparation method of high-purity silicon carbide particles

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Experimental program
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Effect test

Embodiment 1

[0040] This embodiment provides a method for preparing nano-scale high-purity silicon carbide particles using the above-mentioned reaction device, and the specific steps are:

[0041] 1) Vacuumize the plasma reaction chamber and graphite crucible to 10°C by mechanical pump -5 mbar, at the same time, heat the crucible body to 1800~2000°C, keep it for 1h, and check the sealing of the equipment; the pressure is measured by the vacuum gauge in the plasma chamber;

[0042] 2) Feed an inert gas into the reaction device, so that the pressure in the device chamber rises to 9.5mbar; the inert gas is argon with a purity of 99.9999%, and the flow rate of the gas is 400 sccm;

[0043] 3) Introduce high-purity silane and acetylene gas into the plasma chamber, adjust the matching box and radio frequency power to ensure plasma stability; the purity of silane and acetylene gas is 99.99999%, the flow rate of silane is 10 sccm, the flow rate of acetylene is 200 sccm, the radio frequency power s...

Embodiment 2

[0049]This embodiment provides a method for preparing micron-sized high-purity silicon carbide particles using the above-mentioned reaction device, and the specific steps are:

[0050] 1) Vacuumize the plasma reaction chamber and graphite crucible to 10°C by mechanical pump -5 mbar, at the same time, heat the crucible body to 1800~2000°C, keep it for 1h, and check the airtightness of the equipment;

[0051] 2) Turn on the intermediate frequency induction power supply, heat the graphite crucible to 2000°C, the heating rate is 40°C / min, and the heating time is 50min;

[0052] 3) Argon gas with a purity of 99.9999% is introduced into the plasma chamber with a flow rate of 400 sccm; silane and acetylene gas, the purity of silane and acetylene gas is 99.99999%, the flow rate of silane is 10 sccm, and the flow rate of acetylene is 200 sccm; adjust the matching box and RF power, RF power supply power is 50W to ensure plasma stability;

[0053] 4) After the plasma is stable, adjust ...

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Abstract

The invention relates to a reaction device and a preparation method of high-purity silicon carbide particles. High-purity silane and acetylene are used as raw material gases, and high-purity silicon carbide particles are synthesized in an inert atmosphere by cold plasma and heating. The silicon carbide particles synthesized by the gas phase method avoid the introduction of other impurities and ensure the high purity of the silicon carbide particles. At the same time, the cold plasma method uses electron collisions to prepare silicon carbide particles, which greatly reduces the synthesis temperature of silicon carbide particles and reduces the preparation time. It provides a new direction for the industrial production of high-purity silicon carbide particles.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation and relates to the preparation of silicon carbide, in particular to a reaction device and a preparation method of high-purity silicon carbide particles which greatly reduce the synthesis temperature of silicon carbide particles and reduce the preparation cost. Background technique [0002] Silicon carbide is a group IV-IV compound semiconductor, which has the characteristics of wide band gap, high critical electric field strength and high saturation migration rate, which also makes silicon carbide particularly attractive for high-power and high-temperature devices. At present, silicon carbide materials have been widely used in various high-voltage and high-frequency devices, among which semi-insulating silicon carbide is the best substrate for solid-state microwave devices. The physical vapor transport (PVT) method is currently the most mature silicon carbide single crystal prepa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/977
CPCC01P2004/03C01P2004/61C01P2006/80C01B32/977
Inventor 皮孝东徐所成罗昊王亚哲姚秋鹏钟红生杨德仁
Owner ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT