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Method for low-temperature preparation of hafnium oxide-based ferroelectric film through ion beam assisted magnetron sputtering deposition

An ion beam-assisted, magnetron sputtering technology, applied in sputtering plating, ion implantation plating, coating, etc., can solve the problems of uneven film composition and high substrate temperature, and achieve high remanent polarization strength, Low leakage, smooth and compact surface

Pending Publication Date: 2021-06-25
AVIC BEIJING AERONAUTICAL MFG TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method for preparing a hafnium oxide-based ferroelectric film at low temperature by ion beam assisted magnetron sputtering deposition, which overcomes the current HfO 2 In the preparation process of the base ferroelectric film, the substrate temperature is high, additional crystallization annealing is required, and the composition of the film is not uniform, so as to obtain a hafnium oxide-based ferroelectric film with a smooth and dense surface, low leakage, and high remanent polarization.

Method used

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  • Method for low-temperature preparation of hafnium oxide-based ferroelectric film through ion beam assisted magnetron sputtering deposition
  • Method for low-temperature preparation of hafnium oxide-based ferroelectric film through ion beam assisted magnetron sputtering deposition
  • Method for low-temperature preparation of hafnium oxide-based ferroelectric film through ion beam assisted magnetron sputtering deposition

Examples

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Embodiment 1

[0045] Select the plexiglass coated with ITO conductive film as the substrate, first clean the substrate, then dry it with nitrogen, send it into the sputtering chamber, and use a vacuum pump to pump the sputtering chamber to a high vacuum. Pre-sputtering is carried out before sputtering deposition, specifically, high-purity argon gas is introduced to HfO 2 target and Y 2 o 3 The target is pre-sputtered and then co-sputtered. The purity of argon used in the experiment is 99.99%, HfO 2 target and Y 2 o 3 The purity of the target material is 99.99%, and the background vacuum degree of thin film sputtering deposition is 3×10 -4 Pa, the target base distance is 50mm. During target pre-sputtering and film sputtering deposition, the chamber pressure is 0.3Pa, the substrate is not heated, the argon gas flow rate is 20 sccm, HfO 2 Target sputtering power is 50W, Y 2 o 3 The target sputtering power is 10W, the ion beam energy is 800eV during the sputtering deposition of thin fi...

Embodiment 2

[0048] Select a p-type Ge(111) single wafer as the substrate, first clean the substrate, then dry it with nitrogen, send it into the sputtering chamber, and use a vacuum pump to evacuate the sputtering chamber to a high vacuum. Pre-sputtering is carried out before sputtering deposition, specifically, high-purity argon gas is introduced to HfO 2 Target and SiO 2 The target is pre-sputtered and then co-sputtered. The purity of argon used in the experiment is 99.99%, HfO 2 Target and SiO 2 The purity of the target material is 99.99%, and the background vacuum degree of thin film sputtering deposition is 3×10 -4 Pa, the target base distance is 50mm. During target pre-sputtering and film sputtering deposition, the chamber pressure is 0.3Pa, the substrate is not heated, the argon gas flow rate is 20 sccm, HfO 2 Target sputtering power is 50W, SiO 2 The target sputtering power is 12W, the ion beam energy is 1200eV during the film sputtering deposition, the target pre-sputtering...

Embodiment 3

[0050] Select a p-type Si(100) single wafer as the substrate, remove the pollutants and oxide layer on the surface of the Si wafer by RAC cleaning process, then dry it with nitrogen, send it into the sputtering chamber, and use the vacuum pump to evacuate the sputtering chamber to high vacuum. In order to remove impurities on the target surface, pre-sputtering is carried out before thin film sputtering deposition, specifically, high-purity argon gas is introduced to the Pt target, HfO 2 target and ZrO 2 The target is pre-sputtered, followed by Pt bottom electrode, Zr-doped HfO 2 Preparation of Ferroelectric Thin Film and Pt Top Electrode to Get Pt-Zr Doped HfO 2 Capacitors based on ferroelectric thin film-Pt structures. The purity of argon gas used in the experiment is 99.99%, Pt target material, HfO 2 Target and ZrO 2 The purity of the target material is 99.99%, and the background vacuum degree of the thin film deposition and sputtering product is 3×10 -4 Pa, the target ...

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Abstract

The invention discloses a method for low-temperature preparation of a hafnium oxide-based ferroelectric film through ion beam assisted magnetron sputtering deposition. The method comprises the following steps of (1) cleaning a substrate; (2) blow-drying the substrate, and feeding the substrate into a sputtering chamber; (3) pumping the sputtering chamber to high vacuum by using a vacuum pump, and then introducing high-purity argon to pre-sputter a hafnium oxide target material and an oxide target material of a to-be-doped element; (4) starting an ion beam auxiliary source and a radio frequency magnetron sputtering system, and carrying out auxiliary sputtering deposition on the surface of the substrate for a certain time under the condition that the substrate is not heated so as to obtain a hafnium oxide-based ferroelectric film; and (5) turning off the ion beam auxiliary source and the radio frequency magnetron sputtering system, turning on a sputtering power supply of an upper electrode target material, and preparing an upper electrode on the surface of the hafnium oxide-based ferroelectric film, thereby forming a capacitor with a semiconductor / metal-HfO2-based ferroelectric film-semiconductor / metal structure. According to the method, the hafnium oxide-based ferroelectric film with the smooth and compact surface, low electric leakage and high remanent polarization can be obtained.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric thin film preparation, in particular to a method for preparing hafnium oxide-based ferroelectric thin film at low temperature by ion beam assisted magnetron sputtering deposition. Background technique [0002] Ferroelectric thin film integrates many characteristics such as ferroelectricity, piezoelectricity, pyroelectricity, dielectric, electro-optic, photorefractive, acousto-optic and nonlinear optical effects, and has incomparable advantages compared with other materials. Electrical detectors, optical waveguides, optical frequency multipliers, spatial light modulators, non-volatile ferroelectric memories, high dielectric constant capacitors and other fields have shown important application prospects. However, traditional ferroelectric thin film materials, such as lead zirconate titanate, strontium bismuth tantalate, strontium titanate, etc., are prone to performance degradation after under...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/08C23C14/14C23C14/22C23C14/34C23C14/35
CPCC23C14/352C23C14/221C23C14/083C23C14/34C23C14/14C23C14/0641C23C14/086
Inventor 梁海龙张博郭新涛秦浩楠
Owner AVIC BEIJING AERONAUTICAL MFG TECH RES INST
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