Self-powered photoelectric detector based on flexoelectric effect

A flexoelectric effect and photodetector technology, applied in the field of photoelectric detection, can solve the problems of small working temperature range and narrow band, and achieve the effect of large working temperature range, extremely fast nanosecond response, and friendly application environment

Pending Publication Date: 2021-06-29
QINGDAO UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Solve the problems that traditional photodetectors have a small working temperature range, cannot work normally at higher temperatures, often need to be driven by voltage to be able to work normally, and can detect light with a narrow band, etc.

Method used

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  • Self-powered photoelectric detector based on flexoelectric effect
  • Self-powered photoelectric detector based on flexoelectric effect
  • Self-powered photoelectric detector based on flexoelectric effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Such as figure 1 As shown, the self-powered photodetector based on the flexoelectric effect involved in this embodiment has four layers of substrate, bottom electrode, flexoelectric functional layer, and top electrode that are arranged sequentially from bottom to top. The electrode is prepared and formed on the base, the flexoelectric functional layer is prepared and formed on the bottom electrode, and the top electrode is prepared and formed on the oxide film.

[0032] Specifically, the flexoelectric functional layer uses perovskite oxide LaFeO 3(LFO), which has a band gap of 2.3 eV, can absorb blue light corresponding to a wavelength of 450 nm in the solar spectrum. The cubic lattice structure of LFO, The lattice constant and other conditions make it possible to achieve epitaxial growth on a single crystal substrate. LaAlO with pseudocubic (001) orientation 3 As a substrate, its lattice constant is This results in a larger lattice mismatch, which is about (3.92...

Embodiment 2

[0047] Embodiment 2 except step 3 in LaNiO 3 LaFeO deposited on the bottom electrode 3 The thickness of the film is 20nm, and the others are the same as in Example 1.

Embodiment 3

[0049] Embodiment 3 except step 3 in LaNiO 3 LaFeO deposited on the bottom electrode 3 The thickness of the film is 30nm, and the others are the same as in Example 1.

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Abstract

The invention discloses a self-powered photoelectric detector based on a flexoelectric effect. The self-powered photoelectric detector comprises a substrate, a bottom electrode, a flexoelectric functional layer and a top electrode which are arranged from bottom to top, and the substrate is a double-sided transparent substrate material; firstly, a conductive layer is deposited on the double-parabolic substrate with a pulse laser method, and then a functional layer is deposited on the conductive layer with the pulse laser method; finally, the top electrode is deposited on the functional layer with a magnetron sputtering method, and lattice constants of the substrate, the bottom electrode and the flexoelectric functional layer are gradually increased in sequence; the bottom electrode is a conductive layer capable of epitaxially growing on the substrate, and the flexoelectric functional layer has flexoelectric property; and a strain gradient can be generated between the flexoelectric functional layer and the substrate. The design principle of the self-powered photoelectric detector is novel and reliable, and the structure is simple; and the photoelectric detector manufactured through the bulk photovoltaic effect generated by the flexoelectric effect has the advantages of being self-powered, extremely fast in nanosecond response, large in working temperature interval, wide in spectrum, friendly in application environment and the like.

Description

Technical field: [0001] The invention belongs to the field of photoelectric detection, and in particular relates to a self-powered photodetector based on the flexoelectric effect and a preparation method thereof. Background technique: [0002] Photodetector refers to a physical phenomenon in which the conductivity of the irradiated material is changed by radiation. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used in missile guidance, infrared thermal imaging, infrared remote sensing, etc.; in the ultraviolet band, it can be used for example. Satellites and space stations are used to measure the intensity of the sun's far-ultraviolet radiation and other aerospace industries, as well as weather monitoring and forecasting. It has many categories, generally divided in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/16C23C14/18C23C14/28C23C14/35C30B23/02C30B29/22C30B29/24
CPCC23C14/28C23C14/35C23C14/08C23C14/185C23C14/165C30B23/025C30B29/22C30B29/24
Inventor 温峥姜植峥
Owner QINGDAO UNIV
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