Silver composite film layer etching agent and preparation method thereof
A composite film layer and etchant technology, applied in chemical instruments and methods, surface etching compositions, etc., can solve the problems of cumbersome etching process, silver salt adhesion on the pattern surface, etc., and achieve high controllability of etching rate. , The effect of consistent etching rate and high reaction stability
Inactive Publication Date: 2021-07-23
芯越微电子材料(嘉兴)有限公司
View PDF17 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] The technical problem to be solved by the present invention is to provide a silver composite film etchant, which can solve the traditional ITO / Ag / ITO composite film etching process is cumbersome and the problem of silver salt adhesion on the pattern surface
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment approach
[0013] In order to further investigate the etching effect of etching silver composite film etchant, the present invention adopts implementation method: sputtering ITO on substrate glass After the composite film layer is washed and dried, a certain 1.5-2um photoresist is coated on the composite film layer, followed by exposure, development, and 120°C heat-baking to complete the spare sample. The above samples will be used in the verification test of the etching effect of the silver composite film etchant formulated in different examples in Table 1. Etching process: cut the above-mentioned spare sample into small pieces of 10*10 cm, and then use the soaking or spraying process to etch using the above-mentioned embodiment. After etching, they are cleaned with deionized water and dried with nitrogen respectively. The etching effect of the etchant is shown in Table 2 below:
[0014]
[0015] It can be seen from the examples in the above table that the silver composite film etc...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a silver composite film layer etching agent and a preparation method thereof. The silver composite film layer etching agent comprises phosphoric acid, nitric acid, acetic acid and a buffering agent, the cleaning agent comprises the following components in percentage by weight: 30-60% of phosphoric acid, 2-20% of nitric acid, 12-40% of acetic acid, 0.01-10% of a buffering agent and 5-50% of deionized water. According to the method, the metal silver and the oxide thereof can be converted into water-soluble salt, the reaction stability is high, the etching rates of the metal silver and the oxide thereof on the same substrate are basically consistent, the etching rate controllability is high, the problem of small-particle silver residues is fundamentally solved, the reaction stability is high, and the influence on the etching efficiency and the surface flatness caused by deposition attachment is avoided; no special limitation exists in the using process, and a soaking type, a spraying type or a soaking and spraying combined type can be adopted; one-step etching of the composite film layer can be realized, the etching stability is high, and the silver salt adhesion phenomenon is obviously improved.
Description
technical field [0001] The invention relates to a silver composite film etchant and a preparation method thereof. Background technique [0002] The etching process is a technology to remove materials on substrates such as glass or silicon wafers by chemical reaction or physical impact. This process is one of the important and key steps for forming patterns on glass or silicon wafer substrates. It is now widely used Applied in thin film liquid crystal display (TFT-LCD), organic laser display (OLED), large-scale integrated circuit (IC), semiconductor and other microelectronics industries, metal silver as a transition element has relatively stable physical and chemical properties, and has excellent The characteristics of high conductivity and high reflectivity are used more and more in the process of replacing metal molybdenum and aluminum. However, the silver film layer after magnetron sputtering is very easy to react with sulfur chemicals in the environment to produce silver...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C09K13/06C23F1/30
CPCC09K13/06C23F1/30
Inventor 鲁晨泓尹淞刘江华张建
Owner 芯越微电子材料(嘉兴)有限公司