Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic transition metal compound, preparation method and method for forming transition metal-containing thin film

A transition metal and compound technology, applied in the synthesis of metal compounds and thin films, can solve problems such as difficult to obtain transition metal organic compounds

Active Publication Date: 2021-08-03
PEKING UNIV SHENZHEN GRADUATE SCHOOL
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Transition metal organic compounds with high oxidation state have the advantages of easy operation, safety and stability, but it is difficult to obtain such transition metal organic compounds with existing technologies

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic transition metal compound, preparation method and method for forming transition metal-containing thin film
  • Organic transition metal compound, preparation method and method for forming transition metal-containing thin film
  • Organic transition metal compound, preparation method and method for forming transition metal-containing thin film

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0066] Based on this, the embodiment of the present invention provides the preparation method of the organic cobalt metal compound as described above, the method includes the steps of: CoCl 2 (PPh 3 ) 2 The low-priced cobalt compound is obtained by in-situ reduction under the action of zinc powder, and the low-priced cobalt compound reacts with β-pinene or C-C bond oxidative addition to obtain the organic cobalt metal compound.

[0067] Specifically, the first is to use CoCl 2 with twice the molar amount of PPh 3 The reaction gives CoCl which is stable to air at room temperature and pressure 2 (PPh 3 ) 2 . Then, this compound and cyclopentadienyllithium compound undergo lithium halogen exchange reaction at low temperature to obtain Cp-CoCl(PPh 3 ) 2 intermediate product, see figure 1 shown. Then, directly add zinc powder and excess pinene into the reaction system, and react at 100° C. for 24 hours. After the reaction, waste solids and volatile solvents can be remove...

application example 1

[0076] By using chelated η 1 , η 3 , η 5 - cobalt(III) organometallic compound (compound 1) as cobalt precursor and O 2 As a co-reactant, thin films of cobalt oxide were deposited in a home-made tubular atomic layer deposition reactor. Planar SiO 2 / Si substrates were used to study the growth behavior of the films. The cobalt precursor was kept in a bubbler and heated to 50°C to provide sufficient vapor pressure for deposition. The precursor vapor is transported to the deposition chamber with the aid of pure Ar gas (via an inert gas purifier) ​​as a carrier gas. 30 sccm of co-reactant O 2 The gas is delivered to the atomic layer deposition reactor, and the plasma O 2 The length of time is set to 10s. Plasma O 2 The power setting is 90W. During the purge, the argon gas was about 0.4 Torr.

[0077] By using chelated η 1 , η 3 , η 5 - cobalt(III) organometallic compound (compound 1) as cobalt precursor and O 2 As a co-reactant, thin films of cobalt oxide were depos...

application example 2

[0079] By using chelated η 1 , η 3 , η 5 - cobalt(III) organometallic compound (compound 1) as cobalt precursor and H 2 S was used as a co-reactant to deposit cobalt sulfide thin films in a home-made tubular atomic layer deposition reactor. Planar SiO 2 / Si substrates were used to study the growth behavior of the films. The cobalt precursor was kept in a bubbler and heated to 50°C to provide sufficient vapor pressure for deposition. The precursor vapor is transported to the deposition chamber with the aid of pure Ar gas (via an inert gas purifier) ​​as a carrier gas. 30sccm of co-reactant H 2 S gas is delivered to the atomic layer deposition reactor, and the plasma H 2 The length of the S time is set to 10s. Plasma H 2 The power of the S is set to 90W. During the purge, the argon gas was about 0.4 Torr. The obtained cobalt sulfide films were characterized in Figure 8Among them, a-c is the X-ray photoelectron spectrum of the thin film in the case of atomic layer de...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic transition metal compound, a preparation method and a method for forming a transition metal-containing thin film. The structural formula of the organic transition metal compound is selected from one of formulas shown in the specification. A low-valence transition metal and pinene are subjected to carbon-carbon bond oxidative addition to obtain a chelated organic transition metal compound. An organic transition metal metal complex is used as a metal precursor, and research on the atomic deposition process of the metal complex proves that the metal complex well follows ideal atomic layer deposition growth so as to deposit a transition metal-containing film with high purity and smooth surface, and further proves that in the atomic layer deposition process, the transition metal-containing film can be deposited in a deep and wide groove in a shape-preserving manner. It is indicated that the method is very suitable for a complex or porous three-dimensional nano stereo structure substrate, and the transition metal-containing film is uniformly deposited in a shape-preserving manner to obtain the transition metal-containing film.

Description

technical field [0001] The invention relates to the technical field of synthesis of metal compounds and thin films, in particular to an organic transition metal compound, a preparation method, and a method for forming a transition metal-containing thin film. Background technique [0002] Vapor deposition technology includes chemical vapor deposition technology, physical vapor deposition technology, atomic layer deposition technology, etc. With the development of modern science and technology in the field of microelectronics and the needs of industrial automation, the requirements for surface modification technology of materials are getting higher and higher. Vapor deposition technology is in line with its requirements and is one of the fastest growing technologies. It is suitable for preparing various materials, such as superconducting, superhard, ultrathin, corrosion-resistant, information storage and other materials. Among them, chemical vapor deposition (CVD) and atomic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F15/06C23C16/18C23C16/30C23C16/34C23C16/40
CPCC07F15/06C23C16/18C23C16/406C23C16/34C23C16/305C23C16/30
Inventor 王新炜陆科
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com