Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of nitrogen-doped graphene, graphene and application

A nitrogen-doped graphene and substrate technology, applied in the field of graphene, can solve the problems of low N content, difficult parameter control, complex process and the like

Pending Publication Date: 2021-08-13
绍兴熠研科技发展有限公司
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, these methods involve oxygen-assisted etching, the process is complex, and the content of doped N is low; on the other hand, due to the use of CVD method, the existence of gaseous precursors makes the parameters not easy to control, and the performance of the obtained nitrogen-doped graphene is not good. Stablize

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nitrogen-doped graphene, graphene and application
  • Preparation method of nitrogen-doped graphene, graphene and application
  • Preparation method of nitrogen-doped graphene, graphene and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0104] 1. Cleaning and annealing of copper foil

[0105] 1. Copper foil cleaning

[0106] Copper foil (purchased from Alfa Aesar; model 10950; thickness 25 μm) was cut into a size of 1 cm*1 cm, and washed with 25 wt % hydrochloric acid, distilled water, acetone, ethanol, and distilled water in sequence. The specific steps are: (1) Weigh 5g of 36wt% concentrated hydrochloric acid, put it into a 25mL beaker, add 2.2g of distilled water for dilution, immerse the cut copper foil in it, gently stir it with a glass rod every 2min, and continue cleaning 15min; (2) Pick up the copper foil with tweezers and put it in a 25ml beaker filled with 10g of distilled water to soak for 15min, and change the distilled water every 5min for 3 times; (3) Pick up the copper foil in (2) with tweezers Put them into 25mL beakers filled with 10g of acetone and 10g of ethanol and soak them for 15min in turn; (4) Then pick up the copper foil with tweezers and put it into a 25mL beaker with 10g of distill...

Embodiment 2

[0174] The ionic liquid EMIM-dca of 35 μ l is joined in the weighing bottle, then add the acetonitrile (ACN) solvent of 1000 μ l, after fully stirring and dissolving, make the ACN solution of EMIM-dca, get 30 μ l of this solution, the same as in Example 1 Preparation of free-standing nitrogen-doped graphene thin films. Others are the same as embodiment 1.

Embodiment 3

[0176] Add 35 μl of ionic liquid EMIM-dca into the weighing bottle, then add 2000 μl of CAN solvent, stir and dissolve evenly to obtain the CAN solution of EMIM-dca, take 30 μl of the solution, and use the same process as in Example 1 Preparation of nitrogen-doped graphene free-standing thin films. Others are the same as embodiment 1.

[0177] Embodiment 2,3 is the ionic liquid after dilution, and the results are shown in Figure 34 , Figure 35 , Figure 36 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of nitrogen-doped graphene. The method comprises the following steps: cleaning and annealing a catalyst substrate: cleaning the catalyst substrate, drying after cleaning, and annealing after drying; taking ionic liquid as a carbon source, taking the annealed catalyst substrate as a substrate, coating the ionic liquid on the catalyst substrate, and performing pyrolysis and carbonization on the ionic liquid on the catalyst substrate at high temperature in the atmosphere of hydrogen and inert gas to prepare nitrogen-doped graphene; and transferring the nitrogen-doped graphene: coating the surface of the nitrogen-doped graphene with a PMMA anisole solution, then removing impurities on the back surface of the substrate, putting the substrate into a FeCl3 solution to be soaked and etched to remove the substrate, and obtaining the graphene PMMA complex . The complex is repeatedly soaked and washed, impurities are removed, then the complex is soaked in an organic solvent to be dissolved, PMMA is removed, and the nitrogen-doped graphene independent membrane is obtained. The invention also discloses the nitrogen-doped graphene and an application of the nitrogen-doped graphene. And the high-graphite nitrogen-doped graphene with almost no defects can be obtained.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a method for preparing graphene and the graphene prepared by the method. Background technique [0002] Graphene is a complete two-dimensional lattice structure material in which carbon atoms are covalently bonded, showing unique physical and chemical properties, such as large specific surface area, high mechanical strength and excellent chemical stability, etc. These extraordinary properties make graphite Graphene has broad application prospects in many fields such as electronic devices, energy storage and conversion, and biotechnology. However, graphene is a zero-bandgap material, and its conductivity cannot be fully controlled like conventional semiconductors, making them too "metallic" for many electronic applications to be designed for. Therefore, it is necessary to find a way to change the Fermi level of graphene and manipulate its electronic and optical properties. [0003] Among ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/184C01B32/194H01L29/16H01L29/66
CPCC01B32/184C01B32/194H01L29/66045H01L29/1606
Inventor 杨荣华
Owner 绍兴熠研科技发展有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com