Mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and preparation method and application thereof

A laser crystal, anti-radiation technology, used in lasers, crystal growth, laser parts and other directions, can solve the problems of low anti-radiation performance, poor laser performance, etc., achieve excellent mechanical and thermal properties, moderate energy , the effect of reducing the life

Pending Publication Date: 2021-08-17
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to overcome the relatively mature laser crystals (Er:YAG and Er:YSGG) in the prior art that have low radiation resistance and a few Er crystals

Method used

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  • Mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and preparation method and application thereof
  • Mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and preparation method and application thereof
  • Mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0042] This embodiment provides a LuYSGG crystal grown by the melt method as the active ion Er 3+ The 2.7~3μm laser host material is Er 3+ Provide a suitable crystal field to grow Er 3+ The doping concentration is 20at%, Ho 3+ The doping concentration is 0.2at%, Lu 3+ The composition ratio is 23at% Er 0.6 Ho 0.006 Lu 0.69 Y 1.704 sc 2 Ga 3 o 12 Crystal method:

[0043] Er in this embodiment 3+ The doping concentration is 20at%, Ho 3+ The doping concentration is 0.2at%, Lu 3+ The proportion of the components is 23at%, that is, x=0.2, y=0.002, z=0.23. According to the chemical reaction formula 3xEr 2 o 3 +3yHo 2 o 3 +3zLu 2 o 3 +3(1-x-y-z)Y 2 o 3 +2Sc 2 o 3 +3Ga 2 o 3 =2Er 3x Ho 3y Lu 3z Y 3(1-x-y-z) sc 2 Ga 3 o 12 (where x=0.2, y=0.002, z=0.23, abbreviated as Er,Ho:LuYSGG) Accurately weigh a total of 700g of oxide raw materials, then fully mix the initial raw materials, and preliminarily press them into a round cake with a thickness of 20-30mm T...

Embodiment 2

[0047] This embodiment provides a LuYSGG crystal grown by the melt method as the active ion Er 3+ The 2.7~3μm laser host material is Er 3+ Provide a suitable crystal field to grow Er 3+ The doping concentration is 18at%, Pr 3+ The doping concentration is 0.2at%, Lu 3+ The composition ratio is 50at% Er 0.54 PR 0.006 Lu 1.5 Y 0.954 sc 2 Ga 3 o 12 Crystal method:

[0048] Er in this embodiment 3+The doping concentration is 18at%, Pr 3+ The doping concentration is 0.2at%, Lu 3+ The proportion of the components is 50 at%, that is, x=0.18, y=0.002, z=0.5. According to the chemical reaction formula 3xEr 2 o 3 +yPr 6 o 11 +3zLu 2 o 3 +3(1-x-y-z)Y 2 o 3 +2Sc 2 o 3 +3Ga 2 o 3 =2Er 3x PR 3y Lu 3z Y 3(1-x-y-z) sc 2 Ga 3 o 12 (where x=0.18, y=0.002, z=0.5, abbreviated as Er, Pr: LuYSGG) Accurately weigh a total of 760g of oxide raw materials, then fully mix the initial raw materials, and preliminarily press them into a round cake with a thickness of 20-30mm ...

Embodiment 3

[0052] figure 1 It is a device for realizing Er,Ho:LuYSGG crystal 2.7~3μm band mid-infrared laser output by pulsed xenon lamp pumping. Such as figure 1 As shown, the device includes a dielectric mirror 1 (abbreviated as dielectric mirror 1) for total reflection in the 2.7-3 μm band, a concentrating cavity 3, an anti-irradiation Er, Ho:LuYSGG laser crystal element 4, a pulsed xenon lamp 5, and a 2.7- to 3-μm laser crystal element 4. A dielectric mirror 6 (abbreviated as dielectric mirror 6 ) through which the laser light in the 3 μm band partially transmits, and an energy meter 7 . Wherein, a circulating cooling water system 2 is provided outside the radiation-resistant Er, Ho:LuYSGG laser crystal element 4 . In the present invention, the radiation-resistant Er, Ho:LuYSGG laser crystal element is a laser element formed by orientation, cutting and processing of the radiation-resistant Er, Ho:LuYSGG laser crystal provided by the present invention, and is combined with a pulsed ...

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Abstract

The invention belongs to the technical field of functional crystal materials, and particularly relates to a mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and a preparation method and application thereof. The chemical formula of the laser crystal is Er3xRe3yLu3zY3 (1-x-y-z) Sc2Ga3O12, Re < 3 + > is a rare earth ion different from Er < 3 + >, Lu < 3 + >, Y < 3 + >, Sc < 3 + > and Ga < 3 + >, Er < 3 + >, Re < 3 + > and Lu < 3 + > all replace Y < 3 + > at the central position of a dodecahedron, partial substitution of Lu < 3 + > can improve the radiation resistance of the crystal, and a LuYSGG crystal grown by adopting a melt method is used as a laser host material of an active ion Er < 3 + > and can provide a proper crystal field for Er < 3 + >; the co-doped Re < 3 + > can realize a de-activation effect on an active ion Er < 3 + > so that the service life of a lower laser energy level 4I13/2 of the Er < 3 + > is effectively reduced, meanwhile, the service life of an upper laser energy level 4I11/2 is not obviously changed, thereby being beneficial to reducing a laser threshold value and improving laser efficiency.

Description

[0001] This application claims the priority of "A mid-infrared anti-radiation Er, Re: LuYSGG laser crystal and its preparation method and application" with the application number 202110123411.X filed on January 29, 2021, and the original acceptance institution is China. technical field [0002] The invention belongs to the technical field of functional crystal materials, and in particular relates to a mid-infrared anti-irradiation Er, Re:LuYSGG laser crystal and a preparation method and application thereof. Background technique [0003] In recent years, with the continuous deepening of outer space exploration and nuclear energy research and utilization, the development of mid-infrared solid-state lasers that can be directly applied to space environments and strong radiation environments has become increasingly urgent and important. Rare earth ion Er 3+ Has a rich energy level structure, which occurs in different host materials 4 I 11 / 2 → 4 I 13 / 2 Energy level transitions...

Claims

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Application Information

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IPC IPC(8): C30B29/28C30B15/00H01S3/16
CPCC30B29/28C30B15/00H01S3/1608
Inventor 张会丽孙敦陆赵绪尧罗建乔权聪胡伦珍韩志远董昆鹏程毛杰
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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