Transparent conductive barrier film and preparation method and application thereof
A transparent conductive and barrier film technology, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., can solve the problem of poor carrier extraction and injection efficiency, dielectric layer It is difficult to balance conductivity and barrier properties, and the intermediate metal layer is susceptible to corrosion, etc., to achieve the effects of efficient extraction and injection, excellent transparency, and low cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0041] Such as image 3 As shown, the substrate 1 is a PET substrate, and the metal layer 3 is an Ag layer. The film thickness of the Ag layer is 11 nm, and the thickness of the first dielectric layer 2 and the second dielectric layer 4 are both 40 nm. The first dielectric layer 2 is formed by alternately depositing the first ITO layer 21 and the first AZO layer 22, each of the first ITO layer 21 and the first AZO layer 22 have a thickness of 10 nm; the second dielectric layer 4 is composed of the second AZO layer 41 and the second ITO layer 42 are alternately deposited, and each of the second ITO layer 42 and the second AZO layer 41 has a thickness of 10 nm.
[0042] The specific preparation steps of the transparent conductive barrier film in this embodiment are as follows:
[0043] (1) Clean the PET substrate.
[0044] (2) Put the PET substrate on the substrate stage in the cavity of the multi-target magnetron sputtering thin film deposition equipment pre-installed with h...
Embodiment 2
[0049] The structure of the transparent conductive barrier film in this embodiment is similar to that in Embodiment 1, the difference is that the metal layer in this embodiment is an Ag(O) layer, and the Ag(O) layer is formed in an argon-oxygen mixed gas atmosphere. It is formed by sputtering Ag targets under the conditions. The film thickness of the Ag(O) layer is 9 nm. Both the thickness of the first dielectric layer and the second dielectric layer are 40nm. The structures of the first dielectric layer and the second dielectric layer are the same as those in Embodiment 1, and will not be repeated here.
[0050] The specific preparation steps of the transparent conductive barrier film in this embodiment are as follows:
[0051] (1) Clean the PET substrate.
[0052] (2) Put the PET substrate on the substrate stage in the cavity of the multi-target magnetron sputtering thin film deposition equipment pre-installed with high-purity Ag target, ITO target and AZO target.
[005...
Embodiment 3
[0063] Such as Figure 4 As shown, the substrate 1 in this embodiment is a PET substrate, and the metal layer 3 includes CuO x seed layer 31 and Ag layer 32 . CuO x The seed layer 31 is made by sputtering and depositing a Cu layer (with a thickness of 1 nm) after oxidation, and the film thickness of the Ag layer 32 is 7 nm. Both the first dielectric layer 2 and the second dielectric layer 4 have a thickness of 40nm, wherein the first dielectric layer 2 is alternately deposited by the first ITO layer 21 and the first AZO layer 22, each of the first ITO layer 21 and the first AZO layer The thickness of the layers 22 is 10 nm; the second dielectric layer 4 is formed by alternately depositing the second AZO layer 41 and the second ITO layer 42 , each of the second ITO layer 42 and the second AZO layer 41 has a thickness of 10 nm.
[0064] The specific preparation steps of the transparent conductive barrier film in this embodiment are as follows:
[0065] (1) Clean the PET subs...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More