Array interlaced friction nano generator and preparation method thereof

A technology of nano generators and arrays, which is applied in the field of nano semiconductor materials and new energy, and can solve the problems of complex preparation process and high cost

Active Publication Date: 2021-09-14
HUZHOU TEACHERS COLLEGE
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem solved by the present invention is to overcome the defects of complex preparation process and high cost when the friction concave-convex surface of the frictional nanogenerator is prepared by photolithography and other methods in the past, and to provide a p-type semiconductor CuO nano-array and an n-type semiconductor ZnO nano-array to directly interact with each other. The triboelectric nano-power generation device composed of stacking has a simple preparation method and strong process repeatability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array interlaced friction nano generator and preparation method thereof
  • Array interlaced friction nano generator and preparation method thereof
  • Array interlaced friction nano generator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Example 1: CuO nano-array / ZnO nano-array power generation device.

[0058] (3-1) Clean the FTO conductive glass with acetone, isopropanol, and ultrapure water ultrasonically, and then treat it with ultraviolet and ozone for 30 minutes after drying to obtain a clean FTO conductive glass for use;

[0059] (3-2) 0.10 g of copper acetate was dissolved in 5 ml of absolute ethanol, and the resulting mixture was stirred at room temperature for 2 hours to obtain a blue clear solution;

[0060] (3-3) Spin-coat the blue clear solution obtained in step (3-2) on the treated FTO conductive glass at a speed of 2000 rpm / min, and then place it on a heating table for annealing at 100 °C for 1 minute. This process Repeat four times to obtain a uniform copper acetate film;

[0061] (3-4) Calcining the copper acetate film prepared in step (3-3) in a muffle furnace at 250°C for 60 minutes to obtain a CuO dense seed layer film covering the FTO conductive substrate,

[0062] (3-5) Place the...

Embodiment 2

[0069] Embodiment 2: CuO nano-array / ZnO nano-array power generation device.

[0070] (4-1) Preparation of CuO nanorod arrays: except that the reaction time in step (3-5) is 4 hours, the others are the same as in Example 1.

[0071] (4-2) Preparation of ZnO nanorod array: except that the reaction time in step (3-9) is 4 hours, the others are the same as in Example 1.

[0072] (4-3) Overlay the CuO nanoarrays obtained in step (4-1) and the ZnO nanoarrays obtained in step (4-2), and use capillary action to infiltrate the I - / I 3 - Electrolyte, complete the nano triboelectric power generation device.

[0073] Characterization of the battery

[0074] In Comparative Example 1, when CuO nano-arrays and planar ZnO thin films are used to form a nano-triboelectric power generation device, the current density of the device J sc 0.23 uA / cm 2 ; In comparative example 2, when using planar CuO film and ZnO nanometer array to form nano triboelectric power generation device, the curren...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses an array interlaced friction nano generator and a preparation method thereof. The invention relates to a nano friction power generation device formed by directly and mutually overlapping a p-type semiconductor CuO nano array and an n-type semiconductor ZnO nano array, and a preparation method thereof. When the CuO nano array and a planar ZnO thin film are used to form a nano friction power generation device, the current density Jsc of the device is 0.23 uA/cm<2>; when the planar CuO thin film and the ZnO nano array are used to form a nano friction power generation device, the current density Jsc of the device is 0.48 uA/cm<2>; and compared with the two devices, the current density Jsc of the nano friction power generator formed by the CuO nano array and the ZnO nano array is as high as 8 uA/cm<2>. Therefore, the p-type semiconductor CuO nano array and the n-type semiconductor ZnO nano array are directly overlapped with each other, so that the interface area of CuO and ZnO is greatly increased, the friction between CuO and ZnO is more sufficient, and the generated electron hole concentration is richer.

Description

technical field [0001] The invention relates to the fields of nanometer semiconductor materials and new energy sources, specifically a new type of power generation equipment and a preparation method thereof. Background technique [0002] Energy and environmental issues are the two most urgent issues facing mankind, and low-carbon economy is the hottest topic today. Since the first zinc oxide piezoelectric nanogenerator was proposed in 2006, the world has produced the smallest nanogenerator that converts mechanical energy into electrical energy [Science, 312, 5771, 2006]. When objects rub against each other, one side will be negatively charged and the other side will be positively charged. The electricity generated by friction between different materials is called friction electrification. Triboelectrification is one of the most common phenomena in nature. The triboelectrification effect is a charging effect induced by contact, but it is ignored because it is difficult to co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02N1/04B82Y30/00B82Y40/00
CPCH02N1/04B82Y30/00B82Y40/00
Inventor 吴璠
Owner HUZHOU TEACHERS COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap