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A method of splicing and growing diamond single crystals

A diamond single crystal and growth surface technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of steps at the splicing seam, affecting the quality of diamond single crystal, defects, etc., and achieve high-quality results

Active Publication Date: 2022-06-21
JILIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of this method is that during the growth process of two or more diamond single crystals, due to factors such as crystal orientation and defects, the crystal lattices at the splicing seams cannot be completely grown together during the growth process, and become a complete diamond single crystal. The material is squeezed together. After growth and polishing, there is no trace of splicing on the surface, but there will be steps or defects at the splicing seam when it re-grows
In recent years, Japanese scientists have obtained multiple diamond single crystals with almost the same crystal orientation through ion implantation-growth diamond single crystal-stripping diamond single crystals on the same diamond single crystal, and then grown them by splicing. Large-area diamond single crystals, although the problems at the seams have improved, however, the growth defects at the seams will inevitably extend to the inside of the grown diamond single crystal, affecting the quality of the final grown diamond single crystal
[0005] At present, the homoepitaxial growth of diamond single crystals has matured. To obtain large-area diamond single wafers by splicing, it is mainly necessary to solve the growth problem of diamond single crystal lattices at the splicing joints. Through heteroepitaxial growth technology, we The transition layer method can be used to sputter a layer of iridium film on the spliced ​​diamond single crystal surface, but since the entire surface is covered with iridium, a large number of defects will appear during the growth process, resulting in a significant drop in the quality of the diamond single crystal

Method used

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  • A method of splicing and growing diamond single crystals
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Embodiment 1

[0018] The growth of the diamond single crystal material in the present invention is prepared in a microwave plasma CVD system.

[0019] The size of 2 pieces is 7×7mm 2 Natural diamond single crystal (can be diamond single crystal, or synthetic diamond single crystal by high temperature and high pressure and chemical vapor deposition method) as seed crystal, two diamond seed crystals are treated to the same thickness, and the growth surface and side The non-diamond phase is removed, so that the surface of the seed crystal is smooth and flat, and the angle between the growth surface and the adjacent sides is 90 degrees. The sulfuric acid and nitric acid solution with a volume ratio of 3:1 is used for high temperature (300 degrees) treatment to remove the polishing process. After cooling down to room temperature, take out the impurities generated in the seed crystals, ultrasonically clean them with acetone, alcohol and deionized water respectively, dry them, and fix the treated ...

Embodiment 2

[0022] The size of 25 pieces is 7×7mm 2 Artificially synthesized (such as high temperature and high pressure and chemical vapor deposition method) diamond single crystal is used as the seed crystal, and the iridium film is processed, spliced ​​and sputtered according to the steps of Example 1.

[0023] The above-mentioned diamond single crystal substrate with sputtered iridium film on the seam is placed in the sample holder of the sample stage of the MPCVD equipment, and the reaction gas is introduced to grow in three stages after being evacuated with a mechanical pump and a molecular pump. The specific conditions are: first, the low-speed growth stage, the purpose is to allow the iridium film and the diamond single crystal to grow a single diamond epitaxial layer at a low speed at the same time. Growth for 20min; the second is the etching stage, the purpose is to remove a small amount of non-diamond equivalent impurities grown on the iridium surface during the growth process,...

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Abstract

A method for splicing and growing diamond single crystals of the invention belongs to the technical field of diamond single crystal preparation. Using diamond single crystal as the seed crystal, splicing 2 to 25 pieces of seed crystal together to obtain a diamond single crystal substrate, sputtering a layer of iridium film at the splicing seam by magnetron sputtering or vacuum coating; using microwave plasma chemistry Vapor phase deposition (MPCVD) equipment epitaxially grows a complete diamond single crystal epitaxial layer on the surface of a diamond single crystal substrate sputtered with an iridium film to obtain a diamond single crystal material, and the growth plane is a (100) crystal plane. The invention proposes a new method for splicing and growing diamond single crystals to obtain high-quality large-area diamond single crystal wafers.

Description

technical field [0001] The invention belongs to the technical field of diamond single crystal preparation, and relates to a new method for splicing and growing large-area diamond single crystals. Background technique [0002] Diamond is known as the "ultimate semiconductor" material, with a variety of excellent properties, such as large forbidden band width, large hole and electron mobility, effective radiation resistance, etc. These excellent properties make diamond materials in many applications. The field has huge potential. Due to the advantages of no grain boundary and few defects, diamond single crystal has become an excellent material for the preparation of high-power power electronic devices, microwave windows, semiconductor devices, microwave power devices, strong radiation detectors, quantum communication and optoelectronic devices. The premise of these applications is the growth of high-quality large-area diamond single crystal materials that meet the requirement...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/20C30B29/04C30B33/06C23C14/35C23C14/34C23C14/18
CPCC30B25/183C30B25/186C30B25/205C30B29/04C30B33/06C23C14/34C23C14/35C23C14/185
Inventor 王启亮李红东邹广田吕宪义成绍恒刘钧松高楠李柳暗
Owner JILIN UNIV