Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sputtering target for producing layers containing molybdenum oxide

A sputtering target and oxide phase technology, applied in the field of sputtering targets, can solve the problems of not providing the microstructure of MoOx target material, unfavorable relative density, etc.

Pending Publication Date: 2021-11-05
PLANSEE SE
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, fine tuning of the layer stoichiometry also requires the introduction of oxygen, although to a lesser extent than metal targets or MoO 2 target; as mentioned above, this can adversely affect the quality of the deposited layer
The literature does not provide information on the MoO used x More details about target microstructure
Furthermore, the achievable relative density of this target is extremely unfavorable
For the specific example of the substoichiometric oxide Nb-Mo-Ox, a relative density of 85% is specified, while in the spraying process, the operator of the spraying system requires the target to have a maximum relative density, especially >95%, To reduce the risk of arcing, which can lead to the formation of undesired particles in the deposited layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering target for producing layers containing molybdenum oxide
  • Sputtering target for producing layers containing molybdenum oxide
  • Sputtering target for producing layers containing molybdenum oxide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Example 1 of the present invention: MoO 2.375

[0054] MoO through a sieve with a mesh width of 63 μm 2 Powder (Plansee SE) was sieved. The 62 mol % MoO2 powder thus obtained was mixed with 38 mol % MoO3 powder (Molymet) in a high intensity mixer (Eirich) for 20 min in order to distribute the powder components evenly. The resulting powder mixture was loaded into a size Graphite molds with a height of 50 mm were compacted in a vacuum hot press using a pressure of 25 MPa, a temperature of 800 °C and a retention time of 120 min. The relative density of the compacted part was 98.1%. Most of the synthesized targets are composed of Mo 4 o 11 Phase composition, the proportion of which is 95.2% by volume. The target also contains 4.8% MoO by volume 2 Mutually.

Embodiment 2

[0055] Embodiment 2 of the present invention: MoO 2.375 +3mol% Ta 2 o 5

[0056] MoO through a sieve with a mesh width of 63 μm 2 Powder (Plansee SE) was sieved. The thus obtained 76mol% MoO 2 powder with 21mol% MoO 3 powder (Molymet) and 3mol% tantalum pentoxide powder (H.C.Starck, Ta 2 o 5 ) was mixed for 20 min in a high intensity mixer (Eirich) to obtain a homogeneous distribution of the powder components. The resulting powder mixture was loaded into a size Graphite molds with a height of 50 mm were compacted in a vacuum hot press using a pressure of 25 MPa, a temperature of 800 °C and a retention time of 120 min. The relative density of the compacted part was 98.1%. Most of the synthesized targets consist of (Mo 0.93 Ta 0.07 ) 5 o 14 Phase composition, whose proportion by volume is 69%. The target also includes 29% MoO by volume 2 phase and a proportion of 2% Mo by volume 4 o 11 Mutually.

[0057] Embodiment 3 of the present invention: MoO 2.375 +6mol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a sputtering target comprising an electrically conductive, oxidic molybdenum-based target material, characterized in that the target material comprises an MoO2 phase and at least one substoichiometric metal oxide phase, in which at least one metal is molybdenum, wherein in the target material, the atomic ratio of oxygen to molybdenum is in a range from 2.1 to 2.5, with the stipulation that the total oxygen content of the target material is below 71 At.%.

Description

technical field [0001] The invention relates to a sputtering target for producing a molybdenum oxide-containing layer and the use of such a sputtering target for vapor deposition of a molybdenum oxide-containing layer. Background technique [0002] Molybdenum oxide (MoO x ) are used in cathodic atomization systems, such as PVD spray systems (where PVD stands for Physical Vapor Deposition), to deposit molybdenum oxide-containing layers from the vapor phase in a vacuum process. This spraying process (sputtering process) converts layered particles from the (sputtering) target into the gas phase and, by condensation of these particles (optionally, introducing oxygen as reactive gas (“reactive sputtering”)) A corresponding molybdenum oxide-containing layer is formed on the coated substrate. [0003] Molybdenum oxide-containing layers, in particular based on molybdenum oxide, have interesting optical properties and are therefore used in particular for layer structures in optical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/08C23C14/34H01J37/34
CPCH01J37/3429C23C14/083C23C14/3407C23C14/3414
Inventor 迈克尔·奥沙利文克里斯汀·林克恩里科·弗兰兹克哈拉尔德·科斯滕鲍尔约尔格·温克勒
Owner PLANSEE SE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products