Silicon-based AlN capacitor with high withstand voltage and low electric leakage and preparation method thereof

A capacitor and silicon-based technology, which is applied in the field of silicon-based AlN capacitors with high withstand voltage and low leakage and its preparation, can solve the problems of missing N elements in the AlN dielectric layer, and achieve the effects of reducing leakage current, good quality and increasing insulation performance.

Pending Publication Date: 2021-11-30
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Based on this, the present invention provides a silicon-based AlN capacitor with high withstand voltage and low leakage to solve the interface problem between the AlN dielectric layer and the silicon substrate and the problem of the lack of N elements in the AlN dielectric layer in the existing AlN capacitor

Method used

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  • Silicon-based AlN capacitor with high withstand voltage and low electric leakage and preparation method thereof
  • Silicon-based AlN capacitor with high withstand voltage and low electric leakage and preparation method thereof
  • Silicon-based AlN capacitor with high withstand voltage and low electric leakage and preparation method thereof

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preparation example Construction

[0050] The preparation method of the silicon-based AlN capacitor comprises the following steps:

[0051] (1) The silicon substrate is cleaned. The silicon substrate is preferably cleaned by RCA standard cleaning process.

[0052] (2) Depositing a Pt buffer layer on the silicon substrate. Specifically, the magnetron sputtering method is used to deposit the Pt buffer layer, and the deposition thickness may be between 5-10 nm.

[0053] (3) Depositing an AlN dielectric thin film on a silicon substrate deposited with a Pt buffer layer. The AlN dielectric thin film is preferably deposited by pulsed laser deposition, and high-purity nitrogen is used as the growth atmosphere.

[0054] (4) Annealing the AlN dielectric thin film. More preferably, in-situ annealing is performed for 30 minutes after the deposition of the AlN dielectric film, and the annealing conditions are to maintain the temperature and nitrogen partial pressure during the deposition of the AlN dielectric film.

[...

Embodiment 1

[0059] Specifically, the silicon-based AlN capacitor is prepared according to the following steps:

[0060] (1) Selection and processing of the silicon substrate: select a low-resistance p-type silicon substrate as the silicon substrate, and use the RCA standard cleaning process to clean the silicon substrate.

[0061] (2) Depositing a Pt buffer layer on a silicon substrate: a Pt buffer layer with a thickness of 5-10 nm is deposited on a silicon substrate by radio frequency magnetron sputtering, the magnetron sputtering power is set to 20-30W, and argon Gas is used as a protective gas, and the atmospheric pressure is 0.1-0.5Pa.

[0062] (3) Depositing an AlN dielectric film on a silicon substrate with a Pt buffer layer deposited: a pulsed laser deposition method is used to deposit an AlN dielectric film with a thickness of 150 nm on a silicon substrate with a Pt buffer layer, and the pulsed laser energy flux density is 2- 2.5J / cm 2 , the laser repetition frequency is 5Hz, th...

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Abstract

The invention relates to a silicon-based AlN capacitor with high withstand voltage and low electric leakage. The silicon-based AlN capacitor comprises a silicon substrate, an AlN dielectric film and a top electrode which are arranged from bottom to top, and also comprises a Pt buffer layer, wherein the Pt buffer layer is deposited on the silicon substrate, and the AlN dielectric film is deposited on the Pt buffer layer. The invention also relates to a preparation method of the silicon-based AlN capacitor with high withstand voltage and low electric leakage. According to the technical scheme, the interface problem between the AlN dielectric layer and the silicon substrate in an existing AlN capacitor can be solved.

Description

technical field [0001] The invention relates to the field of film capacitors, in particular to a silicon-based AlN capacitor with high withstand voltage and low leakage and a preparation method thereof. Background technique [0002] In radio frequency integrated circuits, passive devices are as indispensable as active devices. Therefore, improving the performance of passive devices is also an important task to improve the performance of circuit systems. Thin-film passive device manufacturing technology can obtain passive devices with strict electrical and physical characteristics due to the mature semiconductor manufacturing process. Its line width and insulating layer thickness can reach below 1μm and 10nm respectively. The strict line width and film size bring strict parameter tolerances (capacitance value and loss value); due to the high vacuum electrode deposition process, different batches The ESR value between sub-products and different products of the same batch is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33H01G4/08H01G4/008H01G4/002H01G13/00C23C14/02C23C14/06C23C14/16C23C14/28C23C14/35C23C14/58
CPCH01G4/33H01G4/08H01G4/002H01G4/008H01G13/006H01G13/00C23C14/35C23C14/025C23C14/165C23C14/28C23C14/0021C23C14/0617C23C14/5806
Inventor 陆旭兵成佳运樊贞张岩
Owner SOUTH CHINA NORMAL UNIVERSITY
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