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A kind of diamine monomer, intrinsic type high dielectric low loss polyimide and preparation method and application thereof

A technology of diamine monomer and polyimide, which is applied in the field of material science, can solve the problems of low dielectric constant and difficult to meet, and achieve the effect of increasing the dielectric constant, increasing the dipole moment, and excellent thermal stability

Active Publication Date: 2022-07-29
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional polyimide has a low dielectric constant (~3.5), which is difficult to meet the requirements of modern electronic information and energy technology fields

Method used

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  • A kind of diamine monomer, intrinsic type high dielectric low loss polyimide and preparation method and application thereof
  • A kind of diamine monomer, intrinsic type high dielectric low loss polyimide and preparation method and application thereof
  • A kind of diamine monomer, intrinsic type high dielectric low loss polyimide and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] 15g (60.02mmol) of 3,5-dibromotoluene, 10.68g (60.02mmol) of N-bromosuccinimide, 0.49g of azobisisobutyronitrile (3mmol) were dissolved in 180mL of acetonitrile, and the temperature was raised under argon protection Reflux to 85°C for 3h. The target product 3,5-dibromobenzyl bromide was obtained by petroleum ether column chromatography. 1 H NMR (400MHz, DMSO–d 6 ) δ7.80 (t, J=1.7Hz, 1H), 7.72 (d, J=1.7Hz, 2H), 4.68 (s, 2H).

[0043] 10 g (30.41 mmol) of 3,5-dibromobenzyl bromide and 7.49 g (73.32 mmol) were added to 75 mL of DMF, reacted at 60°C for 3 hours, poured into 1000 mL of saturated aqueous sodium chloride solution, and a white solid was precipitated. After drying The target product 1,3-dibromo-5(methylsulfonylmethyl)benzene was obtained. 1 H NMR (400MHz, DMSO–d 6 )δ7.90(t, J=1.8Hz, 1H), 7.66(d, J=1.8Hz, 2H), 4.55(s, 2H), 2.96(s, 3H).

[0044] 4g (12.19mmol) 1,3-dibromo-5(methylsulfonylmethyl)benzene, 5.08g (36.58mmol, 2.4eq) p-aminophenylborate hydrochlori...

Embodiment 2

[0052] 15g (60.02mmol) of 2,5-dibromotoluene, 10.68g (60.02mmol) of N-bromosuccinimide, 0.49g of azobisisobutyronitrile (3mmol) were dissolved in 180mL of acetonitrile, and the temperature was raised under argon protection Reflux to 85°C for 3h. The target product 2,5-dibromobenzyl bromide was obtained by petroleum ether column chromatography.

[0053] 10 g (30.41 mmol) of 2,5-dibromobenzyl bromide and 7.49 g (73.32 mmol) were added to 75 mL of DMF, reacted at 60°C for 3 hours, poured into 1000 mL of saturated aqueous sodium chloride solution, and a white solid was precipitated, and after drying The target product 1,4-dibromo-2-(methylsulfonylmethyl)benzene was obtained.

[0054] 4g (12.19mmol) 1,4-dibromo-2-(methylsulfonylmethyl)benzene, 5.08g (36.58mmol, 2.4eq) p-aminophenylborate hydrochloride, 33mL 2M K 2 CO 3 Solution, catalytic amount of Pd (PPh 3 ) 4 Added to 65 mL of THF. The reaction was carried out at 70°C for 48h. After column chromatography, the target produ...

Embodiment 3

[0062] 15g (60.02mmol) of 2,6-dibromotoluene, 10.68g (60.02mmol) of N-bromosuccinimide, 0.49g of azobisisobutyronitrile (3mmol) were dissolved in 180mL of acetonitrile, and the temperature was raised under argon protection Reflux to 85°C for 3h. The target product 2,5-dibromobenzyl bromide was obtained by petroleum ether column chromatography.

[0063] 10 g (30.41 mmol) of 2,6-dibromobenzyl bromide and 7.49 g (73.32 mmol) were added to 75 mL of DMF, reacted at 60°C for 3 hours, poured into 1000 mL of saturated aqueous sodium chloride solution, and a white solid was precipitated. After drying The target product 1,3-dibromo-2-(methylsulfonylmethyl)benzene was obtained.

[0064] 4g (12.19mmol) 1,3-dibromo-2-(methylsulfonylmethyl)benzene, 5.08g (36.58mmol, 2.4eq) p-aminophenyl borate hydrochloride, 33mL 2M K 2 CO 3 Solution, catalytic amount of Pd (PPh 3 ) 4 Added to 65 mL of THF. The reaction was carried out at 70°C for 48h. After column chromatography, the target product ...

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Abstract

The invention discloses a diamine monomer, an intrinsic high-dielectric and low-loss polyimide, a preparation method and application thereof, and belongs to the technical field of material science. The commercial dianhydride monomers such as tetracarboxylic dianhydride are used as raw materials, and the imidization is carried out after polymerization at room temperature to obtain an intrinsic high-dielectric and low-loss polyimide material. The polyimide material prepared by the present invention has high Dielectric constant, low dielectric loss, and excellent thermal stability. The polyimide of the present invention has a simple preparation process and strong universality, and can be used for large-scale industrial production; the polyimide prepared by the present invention can be applied to the preparation of high dielectric materials, and can be applied to energy storage materials, optoelectronic devices, Information industry and other high-tech fields, especially in the application of organic field effect transistors.

Description

technical field [0001] The invention relates to the technical field of material science, in particular to a diamine monomer, an intrinsic high-dielectric and low-loss polyimide, and a preparation method and application thereof. Background technique [0002] With the rapid development of modern electronic information technology and nanotechnology, people have put forward higher requirements for the comprehensive properties of materials. As one of the key materials, traditional high-dielectric materials have been difficult to meet the requirements of advanced electronic and electrical technology. Therefore, the development of new high-dielectric materials with excellent properties is an urgent need for those skilled in the art. The concept of high dielectric materials comes from the semiconductor industry. Generally speaking, materials with a high dielectric constant compared to silicon dioxide are called high dielectric materials (>3.9). [0003] Compared with traditional...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07C317/28C07C315/04C08G73/10
CPCC07C317/28C08G73/1007
Inventor 张艺郑维文刘川梁孝慈蒋星刘四委池振国许家瑞
Owner SUN YAT SEN UNIV
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