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Method for preparing indium phosphide polycrystal from indium phosphide tailings

A technology of indium phosphide and indium tailings, which is applied in the field of compound semiconductor materials, can solve the problems of increasing the cost of treating waste water and residue, waste of resources, and low recovery rate, so as to reduce the generation of rich indium, avoid waste, and low recovery rate Effect

Active Publication Date: 2021-12-10
广东先导微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The recovery rate of these treatment methods is low, resulting in a waste of resources, and also increases the cost of treating waste water and waste residues

Method used

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  • Method for preparing indium phosphide polycrystal from indium phosphide tailings
  • Method for preparing indium phosphide polycrystal from indium phosphide tailings

Examples

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Embodiment 1

[0032] A method for preparing indium phosphide polycrystalline from indium phosphide tailings, the structural schematic diagram of the preparation device is as follows figure 1 As shown, it specifically includes the following steps:

[0033] Select a batch of non-doped indium phosphide tailings, polish them with 400-mesh sandpaper, soak them in a mixture of nitric acid, hydrofluoric acid, and deionized water (volume ratio 1:1:9) for 4 hours, and then put them into an ultrasonic device for Sonicate for 30 minutes, rinse with deionized water for 20 minutes, dehydrate with analytical pure ethanol, put in an oven, bake at 70°C for 3 hours, and set aside. Sampling was sent to detect the content of components and impurity elements, and the analysis results are shown in Table 1.

[0034] Weigh 4000g of non-doped indium phosphide tailings that have been washed and dried for use, crush them into 5-20mm particles with a zirconium hammer, put them in a clean quartz boat, and set aside. ...

Embodiment 2

[0042] A method for preparing indium phosphide polycrystalline from indium phosphide tailings, the structural schematic diagram of the preparation device is as follows figure 1 As shown, it specifically includes the following steps:

[0043] Select a batch of iron-doped indium phosphide tailings, polish them with 600-mesh sandpaper, soak them in a mixture of nitric acid, hydrofluoric acid, and deionized water (volume ratio 1:1:9) for 6 hours, and put them into an ultrasonic device for Sonicate for 40 minutes, then rinse with deionized water for 20 minutes, dehydrate with analytical pure ethanol, put in an oven, bake at 80°C for 4 hours, and set aside. Sampling was sent to detect the content of components and impurity elements, and the analysis results are shown in Table 1.

[0044] Weigh 4500g of iron-doped indium phosphide tailings that have been washed and dried for later use, crush them into 5-20mm particles with a zirconium hammer, and place them in a clean quartz boat fo...

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Abstract

The invention discloses a method for preparing indium phosphide polycrystal from indium phosphide tailings. The method comprises the following steps: respectively placing the indium phosphide tailings and excessive red phosphorus at two ends of a vacuum sealed quartz tube, then placing the quartz tube in a heater, placing the heater in a pressure container, and in the subsequent heating process, enabling the temperature of an indium phosphide tailing area to be higher than that of a red phosphorus area; heating to ensure that the pressure in the quartz tube reaches the separation pressure of indium phosphide before the temperature of the indium phosphide tailing area reaches the melting point of the indium phosphide; after the pressure in the quartz tube reaches the indium phosphide separation pressure, increasing the temperature of the indium phosphide area to 1100-1300 DEG C for heat preservation; and then cooling the indium phosphide region in different regions so as to directionally solidify indium phosphide to obtain the indium phosphide polycrystal material. According to the method, the indium phosphide polycrystal with high yield can be obtained, the utilization rate of the indium phosphide waste can be increased, the process is simplified, the production cost is reduced, resource waste caused in the indium and phosphorus recovery process is avoided, waste water and waste residues are reduced, and the environment is protected.

Description

technical field [0001] The invention belongs to the field of compound semiconductor materials, and in particular relates to a method for preparing indium phosphide polycrystals from indium phosphide tailings. Background technique [0002] As an important semiconductor material, indium phosphide (InP) has higher electro-optical conversion efficiency, electron mobility, operating temperature, and strong radiation resistance than silicon and gallium arsenide materials, and has high development value. It has a wide range of applications in both civilian and military fields. Indium phosphide (InP) is mainly used in terahertz, lasers, solar cells, photodetectors, and optical fiber network systems. With the commercialization of 5G networks, the market demand for InP substrate materials will grow rapidly. The main demand market for indium phosphide comes from the optical communication market, accounting for about 82% of the total market demand, and due to the development of the glo...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B28/06
CPCC30B29/40C30B28/06
Inventor 陈伟杰白平平周铁军危严林嘉威齐正阳
Owner 广东先导微电子科技有限公司