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Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film

A photodetector and antisolvent technology, applied in the field of photodetectors, can solve the problems of poor photoelectric performance of photodetectors, unable to maintain photodetector responsivity, external quantum efficiency and specific detection rate at the same time, and achieve good photoelectric performance. , highly responsive effect

Pending Publication Date: 2021-12-17
佛山仙湖实验室
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the traditional photodetector preparation methods, such as gas blowing method, additive mixing method and vacuum flash annealing method, can obtain high-quality perovskite films (perovskite layer is a kind of photoelectric layer), they inevitably introduce defects. Impurities into perovskite thin films
It further leads to the poor photoelectric performance of the photodetector, especially the inability to maintain high responsivity, external quantum efficiency and specific detectivity of the photodetector at the same time.

Method used

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  • Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film
  • Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film
  • Perovskite thin film and anti-solvent preparation method of photoelectric detector containing perovskite thin film

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Effect test

Embodiment 1

[0059] Embodiment 1: the preparation of perovskite film, photodetector

[0060] A kind of anti-solvent preparation method of perovskite film, comprises the following steps:

[0061] Preparation of perovskite precursor solution: In a nitrogen glove box environment, add 0.4mmol of phenethylamine iodine salt (PEAI) particle powder and 0.2mmol of PbI successively in a glass bottle 2 powder, then add 4mL dimethylformamide (DMF) and let it stand for more than 1h to obtain the perovskite precursor solution;

[0062] SiO with a size of 2.5cm×2.5cm 2 The glass substrate is first cleaned with detergent to clean the oil film on the glass surface, then completely cleaned with deionized water, then ultrasonicated with ethanol for 10 minutes, and finally placed in a plasma cleaning device for modification treatment for 5 minutes to obtain Modified substrate; the working conditions of the plasma cleaning equipment are: the working current is not greater than 1.2A, the power of the RF power...

Embodiment 2

[0067] Embodiment 2: the preparation of perovskite film, photodetector

[0068] Compared with Example 1, the only difference of Example 2 is that in Example 2, the temperature of the hot stage is increased to 100° C. for 5 minutes of annealing. The photodetector prepared in this embodiment was tested under the test conditions that the test wavelength was 475nm, and the optical power of the light source was constant at 14.5W / m 2 , the test area is 1.2mm 2 , the results show that the photodetector has a responsivity of 642μA / W, an external quantum efficiency of 0.17, and a specific detectivity of 3.52×10 8 Jones.

Embodiment 3

[0069] Embodiment 3: the preparation of perovskite film, photodetector

[0070] Compared with Example 1, the only difference of Example 3 is that in Example 3, the temperature of the hot stage was increased to 120° C. for 5 minutes of annealing. The photodetector prepared in this embodiment was tested under the test conditions that the test wavelength was 475nm, and the optical power of the light source was constant at 14.5W / m 2 , the test area is 1.2mm 2 , the results show that the photodetector has a responsivity of 669μA / W, an external quantum efficiency of 0.17, and a specific detectivity of 2.79×10 8 Jones.

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Abstract

The invention belongs to the technical field of photoelectric detectors, and discloses a perovskite thin film and an anti-solvent preparation method of a photoelectric detector containing the perovskite thin film. The preparation method of the anti-solvent comprises the following steps: (1) placing a substrate in plasma cleaning equipment for modification treatment to obtain a modified substrate; and (2) heating the modified substrate prepared in the step (1), dropwise adding a perovskite precursor solution on the modified substrate, dropwise adding an anti-solvent, reacting and annealing to prepare a perovskite thin film, wherein the anti-solvent comprises at least one of methylbenzene, acetone, chlorobenzene or chloroform; and the annealing temperature is 78-122 DEG C. The photoelectric detector has good photoelectric performance and also has high responsivity, external quantum efficiency and specific detection rate, the responsivity of the photoelectric detector is 200-700 [mu] A / W, the external quantum efficiency is greater than 0.01, and the specific detection rate is 108-109 Jones.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, in particular to a method for preparing a perovskite thin film and an antisolvent for a photodetector containing the same. Background technique [0002] Photoelectric detection is a non-contact sensing technology, which has been widely used in biomedical imaging, space detection, security monitoring and other fields. Compared with classical optoelectronic materials, organic-inorganic perovskites have the advantages of controllable processability, tunable optical properties, large optical absorption coefficient, high carrier mobility, long carrier diffusion length and lifetime, etc. . However, conventional organic-inorganic perovskite materials react violently with oxygen and water at room temperature, which can significantly deteriorate the optoelectronic performance of photodetectors containing organic-inorganic perovskite materials. Perovskite materials have improved water stability du...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/15H10K71/12H10K71/40H10K85/30H10K30/00Y02E10/549
Inventor 王学文岳云帆
Owner 佛山仙湖实验室
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