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Inorganic compound composite material, quantum dot light emitting diode and preparation method thereof

An inorganic compound and quantum dot luminescence technology, which is applied in chemical instruments and methods, luminescent materials, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor contact between quantum dots and transport layer materials, and poor film uniformity

Pending Publication Date: 2021-12-21
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The surface of commonly used oily quantum dots is often attached with long-chain surface ligands such as oleic acid, oleylamine, etc. during synthesis. Although these ligands can improve the dispersion of quantum dots in non-polar solvents, due to the The device is a multi-layer material stack structure, and the polarity of the luminescent material and the transport layer material is opposite, resulting in an inevitable mutual exclusion reaction at the interface between the luminescent layer and the transport layer, resulting in poor contact between the quantum dots and the transport layer material, and film uniformity. no problem

Method used

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  • Inorganic compound composite material, quantum dot light emitting diode and preparation method thereof
  • Inorganic compound composite material, quantum dot light emitting diode and preparation method thereof
  • Inorganic compound composite material, quantum dot light emitting diode and preparation method thereof

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preparation example Construction

[0080] Such as figure 2 As shown, the third aspect of the embodiment of the present application provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0081] S01. prepare the ink with the second inorganic compound composite material as the solute, the second inorganic compound composite material includes the inorganic compound material, and the azobenzene ligand bound on the surface of the inorganic compound material; wherein, the azobenzene ligand The structure is shown in formula 2,

[0082]

[0083] Among them, R 1 , R 2 , R 3 , R 4 , R 5 and R 6 each independently selected from one of hydroxyl and hydrogen atoms, and R 1 , R 2 , R 3 , R 4 , R 5 and R 6 Among them, at least one is a hydroxyl group;

[0084] S02. Provide a first electrode substrate, deposit ink on the first electrode substrate, dry and form a film, and prepare a first carrier transport layer on the surface of the first electrode;

[0085] S03. ...

Embodiment 1

[0116] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0117] Disperse zinc oxide nanoparticles in 10mL ethanol solution to form a 1.0mol / L solution, stir and dissolve at 25°C under an argon atmosphere, add 0.1mmol of trans-structure 3-hydroxyazobenzene after stirring for 10 minutes, React for 30 minutes; after the reaction is completed and cooled to room temperature, the zinc oxide nanoparticles are precipitated with ethyl acetate, ethanol, acetone and other solvents, washed and placed in a drying oven to dry;

[0118] Disperse zinc oxide nanoparticles with trans-structured 3-hydroxyazobenzene ligands on the surface in solvent-based ink, and irradiate with a 200w ultraviolet lamp for 30 minutes to make the trans-structured azobenzene ligands on the surface of oxide nanoparticles The body is transformed into a cis structure, and the polarity is enhanced; the ink is used as the precursor solution of the electron transport layer to pr...

Embodiment 2

[0121] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0122] Disperse zinc oxide nanoparticles in 10mL ethanol solution to form a 1.0mol / L solution, stir and dissolve at 25°C under an argon atmosphere, and add 0.1mmol of trans-structure 3,5-hydroxyazo after stirring for 10 minutes Benzene, reacted for 30 minutes; after the reaction was completed and cooled to room temperature, zinc oxide nanoparticles were precipitated with ethyl acetate, ethanol, acetone and other solvents, washed and placed in a drying oven to dry;

[0123] Disperse zinc oxide nanoparticles with trans-structured 3,5-hydroxyazobenzene ligands on the surface in a solvent-based ink, and irradiate with a 200w UV lamp for 30 minutes to make the trans-structured azo on the surface of the oxide nanoparticles The benzene ligand is converted into a cis structure, and the polarity is enhanced; the ink is used as the precursor solution of the electron transport layer to pre...

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Abstract

The invention relates to the technical field of display, and provides an inorganic compound composite material which comprises an inorganic compound material and an azobenzene ligand combined on the surface of the inorganic compound material, wherein the azobenzene ligand comprises at least one of structures shown in a formula 1 and a formula 2, R1, R2, R3, R4, R5 and R6 are respectively and independently selected from one of hydroxyl and hydrogen atoms, and at least one of R1, R2, R3, R4, R5 and R6 is hydroxyl.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an inorganic compound composite material, a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dots (Semiconductor quantum dots, QDs) have a variety of characteristics, including: (1) the emission spectrum can be adjusted by changing the particle size; (3) the excitation spectrum is relatively broad, the emission spectrum is narrow, and the absorption is strong; (3) photostability (4) Longer fluorescence lifetime, etc. Quantum dot materials are widely used in the field of light emission due to their unique optical properties, and have been rapidly developed in the application of quantum dot light emitting diodes (Quantum Dot Light Emitting Diodes, QLED). Compared with organic electroluminescent diodes, quantum dot light-emitting diodes have the advantages of narrow light-emitting spectrum, wide color gamut, good ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/54C09K11/60H01L51/50H01L51/54H01L51/56
CPCC09K11/025C09K11/54C09K11/602H10K85/331H10K85/381H10K50/115H10K50/15H10K50/16H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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