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Self-powered full-perovskite light-emitting diode

A technology of light-emitting diodes and perovskites, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that the miniaturization and integration of devices cannot be truly realized, and the use of light-emitting diodes is inconvenient, so as to facilitate large-scale production and benefit Effects of miniaturization and integration, device size reduction

Pending Publication Date: 2021-12-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the traditional light-emitting diodes need an external power supply to start work, and the external power supply is not convenient for the use of light-emitting diodes in emergency conditions
The all-perovskite solar cell and light-emitting diode integrated device simply connects the two devices in series through wires to form a closed loop. The existence of serial wires between devices will make this structure unable to truly realize the miniaturization and integration of devices.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0027] Example 1: Self-powered all-perovskite green light-emitting diode—the connection layer is an electron transport layer

[0028] Such as figure 1 As shown in (a), it is a schematic structural diagram of the self-powered all-perovskite light-emitting diode provided by Example 1; wherein, 1 is the transparent conductive substrate ITO, 2 is the hole transport layer PTAA, and 3 is the perovskite light-absorbing layer Cs 0.05 ((FA) 0.95 (MA) 0.05 ) 0.95 Pb(I 0.95 Br 0.05 ) 3 , 4 is the connection layer PCBM / BCP, 5 is the perovskite active layer (FA) 1–x (GA) x PbBr 3 , 6 is the hole injection promotion layer MoO 3 , 7 is the hole injection layer TPBI, 8 is the transparent electrode LiF / Al. Among them, layers 1, 2, 3, and 4 constitute p-i-n type perovskite solar cells, and layers 4, 5, 6, and 8 constitute n-i-p type perovskite light-emitting diodes. The energy level relationship of the selected material satisfies figure 2 , where (1) is a hole transport material, (...

Embodiment 2

[0038] Example 2: Self-powered all-perovskite blue light-emitting diode - the connecting layer is a hole transport layer

[0039] Such as figure 1 Shown in (b), the structural representation of the self-powered all-perovskite light-emitting diode that provides for embodiment 2; Wherein, 1 ' is the transparent conductive substrate FTO, 2 ' is the electron transport layer TiO 2 , 3' is the perovskite light-absorbing layer MAPbI 3-x Cl x , 4' is the connecting layer PEDOT:PSS / PTAA, 5' is the perovskite active layer CsPbBr 3 Quantum dots, 6' is the electron injection layer ZnO, and 7' is the transparent electrode LiF / Al. Among them, the 1'~4' layer constitutes the n-i-p type perovskite solar cell, and the material energy level of the p-i-n type perovskite light-emitting diode selected for the 4'~7' layer satisfies image 3 , wherein, ① is an electron transport material, ② is a perovskite light-absorbing material, ③ is a hole transport linking layer material, ④ is a perovskite ...

Embodiment 3

[0049] Example 3: Perovskite tandem solar cell-perovskite light-emitting diode integrated device—the connecting layer is an electron transport layer

[0050] Such as Figure 4 Shown is a schematic structural view of the perovskite tandem solar cell-perovskite light-emitting diode integrated device provided in Example 3. Wherein, the connecting layer is BCP, layers I-VIII constitute perovskite laminated solar cells, and layers VIII-XII constitute perovskite light-emitting diodes. I is the transparent conductive substrate ITO, II is the hole transport layer PTAA, and III is the first perovskite light-absorbing layer (FA) 0.6 Cs 0.4 Pb(I 0.65 Br 0.35 ) 3 , IV is the electron transport layer C 60 / SnO 2 , V is the ITO thin film, VI is the hole transport layer PEDOT:PSS / PTAA, VII is the second perovskite light-absorbing layer (FA) 0.5 (MA) 0.45 Cs 0.05 Pb 0.5 sn 0.5 I 3 , VIII is electron transport connecting layer C 60 / BCP, IX is perovskite active layer CsPbBr 3 , ...

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Abstract

The invention discloses a self-powered full-perovskite light-emitting diode, which belongs to the technical field of electroluminescent devices, and comprises a transparent conductive substrate, a carrier transport layer, a perovskite light absorption layer, a connection layer, a perovskite active layer, a carrier injection layer and a transparent electrode sequentially arranged from bottom to top. The connection layer is a bifunctional carrier transport layer, and simultaneously serves as a carrier extraction layer of the perovskite solar cell and a carrier injection layer of the perovskite light-emitting diode. The perovskite solar cell is adopted for self power supply, an external power supply is not needed, the problem of continuous endurance of the device is effectively solved, the application scene of the device is enriched, meanwhile, the size of the device is greatly reduced, and miniaturization and integration of the device are facilitated; the self-powered full-perovskite light-emitting diode provided by the invention is simple in preparation process, time-saving and energy-saving, and convenient for large-scale production.

Description

technical field [0001] The invention belongs to the technical field of electroluminescence devices, and in particular relates to a self-powered all-perovskite light-emitting diode. Background technique [0002] Light-emitting diodes have the advantages of long life, energy saving, and small size, and are widely used in the field of life. Currently used organic light emitting diodes are limited in the field of higher resolution due to insufficient color purity. Perovskite material is an excellent semiconductor material and is widely used in solar cells. At present, the photoelectric conversion efficiency of perovskite solar cells (PSCs) can reach up to 25.5%, which is comparable to that of traditional silicon-based solar cells. At the same time, perovskite materials are also used to construct light-emitting diodes with high brightness, high efficiency, and narrow emission line width, and by changing the composition of perovskite materials, their bandgap can be flexibly adjus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/28H01L27/30H01L27/32H01L51/54H01L51/46H01L51/42H01L51/50
CPCH10K65/00H10K39/10H10K59/60H10K85/30H10K30/30H10K50/11Y02E10/549
Inventor 罗军生林枋艳万中全贾春阳
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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