Silicon-carbon negative electrode material and preparation method thereof
A negative electrode material, silicon carbon technology, applied in the field of silicon carbon negative electrode material and its preparation, can solve the problems of difficult long-term storage, easy emulsification, easy agglomeration, etc., and achieve the effects of stable capacity, smooth surface and low energy consumption
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Embodiment 1
[0054] (1) Crushing silicon powder with a particle size of 3-5um with a jet crusher until the particle size D50 is 50nm;
[0055] (2) Add 10 g of crushed nano-silicon powder into 40 g of isopropanol, then add it to a high-speed disperser, and disperse for 5 hours at a speed of 1500 r / min to obtain a silicon dispersion with a solid content of 20%;
[0056] (3) Weigh 1 g of carboxymethyl cellulose and 2 g of starch, slowly add them to the silicon dispersion under stirring conditions, and disperse at a speed of 1800 r / min for 1.5 hours to obtain solution A;
[0057] (4) Stir and evaporate the solution A to dryness, raise the temperature to 550° C. at a temperature rise rate of 5° C. / min under a nitrogen atmosphere, and roast for 3 hours to obtain a silicon precursor;
[0058] (5) Add 4.5g of artificial graphite, 0.7g of pitch and 3.5g of silicon precursor to 35g of deionized water for high-speed mixing, and disperse at a speed of 1500r / min for 3 hours to obtain solution B;
[00...
Embodiment 2
[0061] (1) Crushing silicon powder with a particle size of 3-5um with a jet crusher until the particle size D50 is 80nm;
[0062] (2) Add 10 g of crushed nano-silicon powder into 40 g of ethanol, then add it to a high-speed disperser, and disperse for 3 hours at a speed of 1500 r / min to obtain a silicon dispersion with a solid content of 18%;
[0063] (3) Weigh 1 g of glucose and 2 g of starch, slowly add them into the silicon dispersion under stirring conditions, and disperse at a speed of 1800 r / min for 1.5 hours to obtain solution A;
[0064] (4) Stir and evaporate the solution A to dryness, raise the temperature to 550° C. at a temperature rise rate of 5° C. / min under a nitrogen atmosphere, and roast for 3 hours to obtain a silicon precursor;
[0065] (5) Add 4.5g of artificial graphite, 0.7g of pitch and 3.5g of silicon precursor to 35g of deionized water for high-speed mixing, and disperse at a speed of 1500r / min for 3 hours to obtain solution B;
[0066] (6) The soluti...
Embodiment 3
[0068] (1) Crushing silicon powder with a particle size of 3-5um with a jet crusher until the particle size is 100nm;
[0069] (2) Add 10 g of crushed nano-silicon powder into 40 g of ethanol, and disperse for 6 hours at a speed of 1500 r / min with a high-speed disperser to obtain a silicon dispersion with a solid content of 16%;
[0070] (3) Weigh 1 g of polycondensate and 2 g of starch, slowly add them into the silicon dispersion under stirring conditions, and disperse at a speed of 1800 r / min for 1.5 hours to obtain solution A;
[0071] (4) Stir and evaporate the solution A to dryness, raise the temperature to 550° C. at a temperature rise rate of 5° C. / min under a nitrogen atmosphere, and roast for 3 hours to obtain a silicon precursor;
[0072] (5) Add 4.5g of artificial graphite, 0.7g of pitch and 3.5g of silicon precursor to 35g of deionized water for high-speed mixing, and disperse at a speed of 1500r / min for 3 hours to obtain solution B;
[0073] (6) The solution B wa...
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