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Silicon-based vertical cavity surface emitting laser

A vertical cavity surface emission and laser technology, used in lasers, laser parts, semiconductor lasers, etc., can solve problems such as stress material defects and VCSEL device performance degradation, to reduce material defect density, improve optoelectronic performance, and reduce loss. The effect of matching stress

Active Publication Date: 2022-02-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST
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Problems solved by technology

The growth process generally adopts techniques such as metal organic compound vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to directly epitaxially grow GaAs, InP and other compound materials on the crystalline silicon substrate, because the lattice mismatch of the epitaxial material will introduce relatively large Large stress will generate more material defects, which will eventually lead to a significant decline in the performance of VCSEL devices

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  • Silicon-based vertical cavity surface emitting laser

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Embodiment Construction

[0013] The present invention will be further described in detail below in conjunction with the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0014] see figure 1 As shown, this embodiment provides a silicon-based vertical cavity surface emitting laser, including: a single crystal Si substrate 10, a multilayer composite structure buffer layer 20 and a III-V group VCSEL laser emitting unit 30 are sequentially stacked from bottom to top . The upper surface of the single crystal Si substrate 10 adopts nano-pattern lithography technology to form a nano-column structure. The mesa of a single nano-column is square, with a side length of 20-50 nm and a height of 50-200 nm. The distance between adjacent nano-columns is 100 nm. ~500nm. The buffer layer 20 of multilayer composite structure is composed of two-dimensional BN layer 21, III-V group compound 22 and GaAs quantum dots 23, which are cyclically grown, and the c...

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Abstract

The invention discloses a silicon-based vertical cavity surface emitting laser which comprises a single crystal Si substrate, wherein a multi-layer composite structure buffer layer and an III-V group VCSEL laser emitting unit are sequentially arranged on the upper surface of the Si substrate from bottom to top according to a layered stacked structure. The upper surface of the single crystal Si substrate is of a nano-column structure, and the multi-layer composite structure buffer layer is formed by cyclically growing a two-dimensional BN layer, a III-V group compound and GaAs quantum dots. By utilizing the material characteristics of the buffer layer with the multi-layer composite structure, the mismatch stress borne by the III-V group VCSEL laser emitting unit can be reduced, the material crystal quality is improved, and the photoelectric property of the silicon-based laser is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a silicon-based vertical cavity surface emitting laser. Background technique [0002] With the rapid development of 5G communication, big data processing and artificial intelligence, semiconductor vertical cavity surface emitting lasers (VCSEL) are in increasing demand in the fields of optical communication, 3D sensing and intelligent driving. At the same time, with the advancement of integrated circuit technology, the technical requirements for the integration of optoelectronic devices and silicon-based microelectronic devices (silicon photonics integration) are becoming more and more urgent. However, most of the current commercial VCSELs are based on GaAs and InP substrates, and the technical difficulty of integrating with silicon-based circuits is relatively high, and the process is relatively complicated. [0003] If the VCSEL material is directly prepared on th...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/34H01S5/343
CPCH01S5/183H01S5/3406H01S5/3412H01S5/343H01S5/34313
Inventor 张小宾王悦辉林凯文王可
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA ZHONGSHAN INST