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Preparation method of ultrathin soft soldering modified layer on surface of graphene film

A graphene film and modified layer technology, applied in welding equipment, welding equipment, non-electric welding equipment, etc., can solve the problems of poor wettability, difficulty in ensuring low temperature, high-quality connection, easy peeling of graphene film, etc., to achieve wetness Improved wettability, good wetting and metallurgical bonding, and high stability

Active Publication Date: 2022-02-11
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are two obvious problems in the connection between the active solder and the graphene film: on the one hand, the connection between the graphene film and the active solder only exists on the surface, which makes the surface of the graphene film easy to peel off; on the other hand, the common low temperature Solder has poor wettability on the surface of active solder, making it difficult to ensure low-temperature, high-quality connections between brazed modified graphene films and electronic devices

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  • Preparation method of ultrathin soft soldering modified layer on surface of graphene film
  • Preparation method of ultrathin soft soldering modified layer on surface of graphene film
  • Preparation method of ultrathin soft soldering modified layer on surface of graphene film

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Embodiment 1

[0036] Step (1) In this embodiment, the thickness of the graphene film is 18 μm, and the size of the area to be modified is 20 mm×15 mm. A laser cutting machine is used to punch holes in the area to be modified. The diameter of the circular hole is 600 μm, and the distance between the centers of the circles is 1 mm. , in a regular array covering the area to be modified, for details, please refer to the attached figure 1 ;

[0037] Step (2) The active solder alloy is Ag-27Cu-3.3Ti (wt%) with a thickness of 80 μm, cut it into a rectangle with a size of 20mm×15mm with a laser cutting machine, and cut it in half with sandpaper with a mesh number of 800 The active solder alloy is subjected to surface grinding treatment, and after the surface oxide film is removed, it is put into a beaker equipped with absolute ethanol and ultrasonically cleaned for 3 minutes; the cleaned active solder alloy is tiled on the graphene thin to be modified area On the bottom of the modified area, a lay...

Embodiment 2

[0046] Step (1) In this embodiment, the thickness of the graphene film is 18 μm, and the size of the area to be modified is 20 mm×15 mm. A laser cutting machine is used to punch holes in the area to be modified. The diameter of the circular hole is 300 μm, and the distance between the centers of the circles is 1 mm. , covering the area to be modified in a regular array;

[0047] Step (2) The active solder alloy is Ag-27Cu-3.3Ti (wt%) with a thickness of 80 μm, cut it into a rectangle with a size of 20mm×15mm with a laser cutting machine, and cut it in half with sandpaper with a mesh number of 800 The active solder alloy is subjected to surface grinding treatment, and after the surface oxide film is removed, it is put into a beaker equipped with absolute ethanol and ultrasonically cleaned for 3 minutes; the cleaned active solder alloy is tiled on the graphene thin to be modified area On the bottom of the modified area, a layer of graphene film is laid on the bottom of the modif...

Embodiment 3

[0051] Step (1) In this embodiment, the thickness of the graphene film is 18 μm, and the size of the area to be modified is 20 mm × 15 mm. A laser cutting machine is used to process circular pits on the surface of the area to be modified, and the diameter of the circular hole pits is 300 μm. , with a distance of 1 mm between the centers of the circles, and the area to be modified is covered in a regular array;

[0052] Step (2) The active solder alloy is Sn-5Ti (wt.%) with a thickness of 100 μm, cut it into a rectangle with a size of 20 mm × 15 mm with a laser cutting machine, and use sandpaper with a mesh number of 800 to cut the active solder. The solder alloy is surface polished, and after the surface oxide film is removed, it is placed in a beaker filled with absolute ethanol and ultrasonically cleaned for 3 minutes; the cleaned active solder alloy is tiled on the graphene thin area to be modified. Vacuum brazing is carried out on the graphene film and the active solder al...

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Abstract

The invention provides a preparation method of an ultrathin soft soldering modified layer on the surface of a graphene film, and the preparation method comprises the following steps that: firstly, a to-be-modified region is processed on a graphene film; secondly, active brazing filler metal alloy is placed above the to-be-modified region, brazing is carried out under the vacuum condition, and a first modified layer is formed on the surface of the to-be-modified region; and finally, a metal sheet is placed on the surface of the first modified layer, micro-diffusion welding is carried out under the vacuum condition, a second modified layer is formed on the surface of the first modified layer, and the ultrathin soft soldering modified layer on the surface of the graphene film is obtained. According to the preparation method provided by the invention, good mechanical occlusion and metallurgical bonding between the graphene film and the soft soldering modified metal layer can be realized, the bonding strength between the modified layer and the graphene film is high, the interface contact thermal resistance and contact resistance are low, wetting and metallurgical bonding between the modified layer and conventional low-temperature solder are good. And the soft soldering modified alloy layers can be prepared at any position on the surface of the graphene film in batches.

Description

technical field [0001] The invention belongs to the technical field of graphene materials, in particular to a method for preparing an ultra-thin soldering modified layer on the surface of a graphene film. Background technique [0002] Graphene is a sp 2 The carbon atoms connected by hybridization are closely packed into a single-layer two-dimensional honeycomb lattice structure, and the graphene film is stacked by highly oriented multi-layer graphene, and the sp 2 The hybrid electron orbitals form a delocalized π bond perpendicular to the interlayer, and electrons can move freely within the π bond, so the graphene film has good conductivity, and its conductivity exceeds 10 5 S / m. In addition, graphene film also has excellent thermal conductivity, and the thermal conductivity of its (002) crystal plane can reach more than 2000W / m·K, far exceeding the 429W / m·K of silver, which has the highest thermal conductivity among metals. With low density, ultra-high flexibility, elect...

Claims

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Application Information

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IPC IPC(8): B23K1/008B23K20/00B23K20/14B23K26/38
CPCB23K1/008B23K20/001B23K20/14B23K26/38Y02E60/13
Inventor 肖勇程凯赵宇张建
Owner WUHAN UNIV OF TECH