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Trivalent chromium ion-doped near-infrared band luminescent material and preparation method thereof

A luminescent material and near-infrared technology, applied in luminescent materials, chemical instruments and methods, etc., can solve the problems of narrow emission wavelength range, large temperature quenching, low luminous efficiency, etc., achieve wide emission wavelength range, low equipment requirements, good thermal stability

Pending Publication Date: 2022-02-11
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is: existing near-infrared luminescent materials have problems such as large temperature quenching, narrow emission wavelength range, and low luminous efficiency.

Method used

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  • Trivalent chromium ion-doped near-infrared band luminescent material and preparation method thereof
  • Trivalent chromium ion-doped near-infrared band luminescent material and preparation method thereof
  • Trivalent chromium ion-doped near-infrared band luminescent material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0022] a Cr 3+ Doped near-infrared luminescent material CsGaGe 2 o 6 : 1%Cr 3+ , the material is powdery, and its preparation method comprises the steps:

[0023] According to the molecular formula ratio, cesium carbonate, gallium oxide, germanium oxide, and chromium oxide with a purity of more than 99.9% are used as raw materials, and the specific masses of cesium carbonate, gallium oxide, germanium oxide, and chromium oxide are 3.6714g, 2.0910g, and 4.7164g respectively. g, 0.0171g. Grind the accurately weighed raw materials with absolute ethanol in an agate mortar, mix them uniformly to obtain a precursor, put it into a corundum crucible, and raise the temperature to 800 °C at a heating rate of 100 °C / h in an air atmosphere, keep it warm and After calcination for 2 hours, cool down to room temperature with the furnace, place the sample in an agate mortar, grind it evenly with absolute ethanol, put it into a corundum crucible, and raise the temperature to 1400 °C at a he...

Embodiment 2

[0025] a Cr 3+ Doped near-infrared luminescent material CsGa 0.9 Al 0.1 Ge 2 o 6 : 1%Cr 3+ , the material is powdery, and its preparation method comprises the steps:

[0026] According to the molecular formula ratio, cesium carbonate, gallium oxide, aluminum oxide, germanium oxide, and chromium oxide with a purity of more than 99.9% are used as raw materials, and the specific masses of cesium carbonate, gallium oxide, aluminum oxide, germanium oxide, and chromium oxide are respectively 3.7053 g, 1.9078g, 0.1102g, 4.7599g, 0.0173g. Grind the accurately weighed raw materials with absolute ethanol in an agate mortar, mix them uniformly to obtain a precursor, put it into a corundum crucible, and raise the temperature to 800 °C at a heating rate of 100 °C / h in an air atmosphere, keep it warm and After calcination for 2 hours, cool down to room temperature with the furnace, place the sample in an agate mortar, grind it evenly with absolute ethanol, put it into a corundum cruci...

Embodiment 3

[0028] a Cr 3+ Doped near-infrared luminescent material CsGa 0.9 In 0.1 Ge 2 o 6 : 1%Cr 3+ , the material is powdery, and its preparation method comprises the steps:

[0029] According to the molecular formula metering ratio, cesium carbonate, gallium oxide, indium oxide, germanium oxide, and chromium oxide with a purity of more than 99.9% are used as raw materials, and the specific masses of cesium carbonate, gallium oxide, indium oxide, germanium oxide, and chromium oxide are 3.6363 g, 1.8723g, 0.2944g, 4.6713g, 0.0170g. Grind the accurately weighed raw materials with absolute ethanol in an agate mortar, mix them uniformly to obtain a precursor, put it into a corundum crucible, and raise the temperature to 800 °C at a heating rate of 100 °C / h in an air atmosphere, keep it warm and After calcination for 2 hours, cool down to room temperature with the furnace, place the sample in an agate mortar, grind it evenly with absolute ethanol, put it into a corundum crucible, and...

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Abstract

The invention discloses a Cr<3+>-doped near-infrared band luminescent material and a preparation method thereof. The chemical general formula of the Cr<3+>-doped near-infrared band luminescent material is CsA<3+><1-y>B<4+><2>O<6>: yCr<3+>, wherein A<3+> is at least one selected from the group consisting of Al<3+>, Ga<3+> and In<3+>, and B<4+> is at least one selected from the group consisting of Si<4+>, Ge<4+>, Sn<4+>, Ti<4+> and Zr<4+>; y is greater than 0.01 at% and less than 20 at%; and a luminescence center is non-rare earth ion Cr<3+>. The Cr<3+>-doped near-infrared band luminescent material is prepared by adopting a high-temperature solid-phase method. The preparation method of the near-infrared band luminescent material has the advantages of low raw material cost, simplicity and feasibility in operation, low requirements on equipment and the like. The near-infrared band luminescent material disclosed by the invention has the excellent properties that an emission wavelength range is positioned in a near-infrared region, performance is stable and the like.

Description

technical field [0001] The invention relates to a near-infrared band luminescent material and a preparation method thereof; in particular to a Cr 3+ The doped near-infrared luminescent material and its preparation method can be used in fields such as face recognition, security monitoring, food detection, plant lighting, and biological imaging. It belongs to the technical field of luminescence detection. Background technique [0002] The luminescent material consists of a matrix and an activator. For the activators of broadband near-infrared luminescent materials, research in recent years has mainly focused on transition metal ions, among which trivalent chromium ions Cr 3+ is one of the best choices. Cr 3+ The 3d energy level of the ion is greatly affected by the coordination environment around the ion, and is very sensitive to the strength of the external crystal field environment, which is suitable for regulation. Cr with different coordination structures 3+ Differen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/62C09K11/64C09K11/66
CPCC09K11/62C09K11/641C09K11/66
Inventor 张彦刘家文王占勇徐家跃龚震
Owner SHANGHAI INST OF TECH