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Semiconductor pumping metastable state inert gas laser system based on plasma jet

A plasma and inert gas technology, applied in the field of lasers, can solve the problems of increased demand voltage, arc discharge in the pump area, and difficulty in expansion, so as to improve output power and efficiency, achieve high-power scaling and amplification, and improve cross-relaxation. The effect of the hedonic rate

Active Publication Date: 2022-03-01
NAT UNIV OF DEFENSE TECH
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Problems solved by technology

One of the basic conditions for the realization of high-power and high-efficiency DPRGLs is the generation of large-volume, high-concentration metastable atoms by electronic excitation in atmospheric-pressure gases, usually requiring a concentration of 10 13 -10 14 cm -3 order of magnitude; however, existing technical solutions are immature and unable to meet the above requirements
M.C.Heaven et al. generated metastable argon atoms through high-repetition-frequency nanosecond DC discharge between two plane-parallel electrodes and achieved ten-watt-level laser output, but the discharge area was limited (about 0.5cm 3 ) and difficult to expand, the electrode surface is easily damaged, and it is easy to change from glow discharge to arc discharge under high voltage and pressure (Demonstration of a CW diode-pumped Ar metastable laser operating at 4 W, Opt. Lett., Vol.42 , No.2, 4627, 2017); W.T.Rawlins of the American Physical Sciences Corporation chose microwave discharge to achieve high-efficiency laser output, but the discharge area is only limited to the microwave resonant micro-area (1.9cm×300um×900um), which is difficult to expand (Optically pumpedmicroplasma rare gas laser, Opt.Express, Vol.23, No.4, 4804, 2015); P.J.Moran of the U.S. Air Force Research Laboratory chose large-volume radio frequency discharge, and the concentration of metastable atoms that can be generated is too low (10 11 cm -3 ), barely reaching the laser oscillation threshold (Plasma and laser kinetics and field emission from carbonnanotube fibers for an Advanced Noble Gas Laser (ANGL), Proc.of SPIE, Vol.9729, 97290C-1, 2015); Within the scope of the above discharge methods
[0004] To sum up, the generation of metastable inert gas atoms is concentrated in the gap space limited by the two electrodes. This method is suitable for basic research, but it cannot meet the needs of high-power laser development. The specific reasons include: 1. The discharge volume cannot be expanded, and as the electrode spacing increases, the required voltage increases, which can easily turn into arc discharge; 2. The electrode surface is easily damaged, resulting in changes in the discharge state, making it difficult to operate reliably; 3. High-power pump lasers will cause plasma The state changes, resulting in arc discharge in the pumping area; 4. The upper and lower electrodes will form a parasitic oscillation cavity under strong pumping conditions, which seriously interferes with the normal operation of the laser system

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  • Semiconductor pumping metastable state inert gas laser system based on plasma jet
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  • Semiconductor pumping metastable state inert gas laser system based on plasma jet

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0029] figure 1 It is a schematic diagram of the energy level structure and transition process of a semiconductor-pumped metastable noble gas laser. Noble gas atoms (Ar, Kr, and Xe) have a full-shell ground-state electronic structure ns as shown 2 np 6 (1S 0 state), which is excited to np by electron collision 5 (n+1)s structure, which has four energy states (1s 2 to 1s 5 , where 1s 5 is the lowest metastable energy level), np 5 The (n+1)p structure has ten energy states (2p 1 ,2p 2 ,…2p 10 ), a three-level laser process very similar to DPALs is: pump transition 1s 5 →2p 9 , the laser transition 2p 10 →1s 5 , 2p 9 →2p 10 Between them is the electric dipole forbidden transition, which is realized by the collision relaxation of buffer gases such as helium.

[0030] figure 2 It is a structural composition diagram of the semicond...

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Abstract

The invention belongs to the technical field of lasers, and particularly relates to a plasma jet-based semiconductor pumping metastable inert gas laser system, which comprises a gas supply system, a power supply system, a plasma jet generation device, a jet region, a semiconductor pumping source and a laser resonant cavity, metastable inert gas atoms are generated based on atmospheric pressure plasma jet to serve as a laser gain medium, high-power semiconductor laser is adopted for pumping to achieve high-efficiency and high-power laser output, and efficient heat dissipation is conducted through gas flow. The device has the advantages of stable discharge under atmospheric pressure, high metastable state atom concentration, array expansion of gain volume, simple and reliable system and the like, and a brand new system architecture is provided for a new generation of ultra-high energy laser system which realizes full-electric operation, light weight and compactness.

Description

technical field [0001] The invention belongs to the technical field of lasers, and in particular relates to a semiconductor pumped metastable inert gas laser system based on a plasma jet. Background technique [0002] Diode Pumped Metastable Rare Gas Lasers (DPRGLs) are metastable (1s 5 State) inert gas atoms (usually argon, krypton and xenon, etc.) are used as the laser medium, pumped by high-power semiconductor lasers, laser output is realized based on a three-level operation mechanism, and efficient heat dissipation is achieved by gas flow. DPRGLs is a new type of optically pumped gas laser system (Gain and lasingof optically pumped metastable rare gas atoms) first proposed by M.C.Heaven of Emory University in the United States in 2012 on the basis of optically pumped alkali metal lasers (Diode PumpedAlkali Lasers, DPALs). , Opt. Lett., Vol.37, No.11, 2157, 2012). Due to the similarity in atomic structure, DPRGLs inherit the physical advantages of DPALs: all-electric op...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/0933H01S3/22
CPCH01S3/2207H01S3/0933Y02E30/10
Inventor 杨子宁王蕊王红岩杨未强韩凯许晓军
Owner NAT UNIV OF DEFENSE TECH
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