Method for preparing high-purity cobalt and application
A high-purity, cobalt salt technology, used in ion implantation plating, gaseous chemical plating, coating, etc., can solve problems such as failure to meet purity requirements, impurities are not effectively removed, and achieve excellent product quality and low cost. , the effect of strong operability
Pending Publication Date: 2022-03-18
海朴精密材料(苏州)有限责任公司
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Problems solved by technology
The process uses H at a temperature of 750-800°C 2 Reduced high-purity CoCl 2 , lasted 1h, annealed the obtained Co powder in a chlorine gas flow, and finally grew Co crystals by electron beam zone melting method, in which the impurities were not effectively removed, and the obtained Co crystals were far from meeting the requirements of high-purity Co targets for integrated circuit chip manufacturing. and purity requirements of ALD precursors
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Embodiment 1
[0042] This embodiment provides a method for preparing high-purity cobalt, comprising the following steps:
[0043] 1) Dissolve 800 g of cobalt chloride hexahydrate with a purity of 99.5% in 1000 ml of water, add 2 grams of ammonium hydrogen sulfide, stir while adding, and then stir for 2 minutes after adding. Then add 12ml of ammoniacal liquor (concentration is 25~28%), keep stirring while adding, leave standstill and filter after 120 minutes;
[0044] 2) Put the obtained filtrate into a drying oven at 180°C and dry until crystal film appears on the surface, take it out and put it in a basin filled with water, stir at 60rpm for 2 minutes, let it stand for 1 minute, and then stir at 60rpm 2 minutes, stand still for 1 minute, repeat the above stirring and standing steps until the temperature of the filtrate is close to room temperature, pour the solution into a suction filter container to separate the mother liquor, and obtain high-purity cobalt salt CoCl 2 ·6H 2 O;
[0045]...
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The invention provides a method for preparing high-purity cobalt and application. The method comprises the following steps: mixing cobalt salt with a precipitator, precipitating, filtering, and concentrating the obtained filtrate to obtain high-purity cobalt salt; reducing the high-purity cobalt salt to obtain high-purity cobalt; wherein the precipitator is selected from one or more of ammonium hydrogen sulfide, hydrogen sulfide, ammonia gas and ammonia water. According to the method, impurities in the cobalt salt can be effectively removed, new impurities are prevented from being introduced in the impurity removal process, the prepared cobalt is high in purity and low in copper, nickel and iron content and has excellent product quality, and meanwhile the method is high in operability and low in cost and has wide application prospects.
Description
technical field [0001] The invention relates to the technical field of high-purity metal materials, in particular to a method and application for preparing high-purity cobalt. Background technique [0002] High-purity cobalt (Co) has excellent ferromagnetic properties and good electrical conductivity, and has important applications in the fields of atomic layer deposition precursors, integrated circuit chips, and sputtering targets in the preparation of magnetic recording media. [0003] With the reduction of the line width of the semiconductor process, cobalt is used as a metal interconnection wire in the process below 5nm, which puts forward higher requirements for the purity of the cobalt sputtering target. It is hoped that the purity of cobalt can reach 5N or even higher, especially The requirements for the content of metal impurities such as Cu, Ni and Fe are more stringent. High-purity cobalt can also be used as a precursor for atomic layer vapor deposition (Co(CO) 3...
Claims
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IPC IPC(8): B22F9/22C23C14/34C23C16/455
CPCB22F9/22C23C16/45525C23C14/3407
Inventor 李迅刘丽君
Owner 海朴精密材料(苏州)有限责任公司