VO2-based multi-layer thin film structure and preparation method of VO2-based multi-layer thin film structure product

A thin film structure, VO2 technology, applied in the field of spacecraft thermal control, can solve the problems of complex structure and preparation process, high energy consumption, expensive manufacturing and emission costs, etc., achieve high visible light transmittance, low solar absorption rate, good Effects of thermal control properties and thermal shock resistance

Active Publication Date: 2022-03-25
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing spacecraft thermal control devices have problems such as complex structures and manufacturing processes, high energy consumption, and high manufacturing and launch costs.

Method used

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  • VO2-based multi-layer thin film structure and preparation method of VO2-based multi-layer thin film structure product
  • VO2-based multi-layer thin film structure and preparation method of VO2-based multi-layer thin film structure product
  • VO2-based multi-layer thin film structure and preparation method of VO2-based multi-layer thin film structure product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] In this example, the JGP450 magnetron sputtering deposition system was used to prepare VO 2 Multilayer film structure. In the experiment, with the (100) direction single crystal silicon wafer as the substrate, high-purity metal targets titanium target (purity 99.99%), high-purity metal silver target (purity 99.99%), high-purity metal aluminum target (purity 99.999%) and a high-purity metal vanadium target (purity 99.9%) to prepare a multilayer film structure. Ag / Al 2 o 3 / VO 2 The preparation process steps of the thin-film structure SRD device include: (1) radio frequency sputtering deposition transition layer Ti thin film; (2) DC sputtering deposition reflection layer Ag thin film; (3) DC reactive sputtering deposition optical dielectric layer Al 2 o 3 thin film; (4) DC reactive sputtering deposition of functional layer VO 2 Film; (5) VO 2 Subsequent heat treatment of the film. Among them, the specific experimental process of preparing thin films by magnetron s...

experiment example 1

[0118] After confirming that the thin-film structure is an F-P resonant cavity, it is necessary to find a suitable thin-film material as the optical dielectric layer. By changing the material of the optical dielectric layer, the Al 2 o 3 , SiO 2 、TiO 2 and HfO 2 The effect of optical dielectric materials on the thermal control performance of SRD devices. According to the previous derivation, the thickness of the optical medium layer of the F-P resonator cavity and the designed specific wavelength band should satisfy λ / 4n, which is the optical thickness (qw). The thickness is designed for a wavelength of 10 μm, and the thickness parameter selection of various materials is shown in Table 2. Image 6 It is the influence of different optical dielectric materials on the infrared absorption rate of SRD devices. It can be seen that for the F-P resonator, different optical dielectric materials have no obvious influence on the infrared absorption performance of SRD. However, in ...

experiment example 2

[0122] When Al 2 o 3 After the material is selected as the optical medium layer, the thickness of the optical medium layer needs to be determined. selected VO 2 Functional layer thickness (50nm), respectively simulated 900nm, 1200nm, 1500nm, 1700nm thickness Al 2 o 3 The effect of thin films on the infrared absorption ability of SRD devices. Figure 7 Infrared absorptivity of SRD device varies with Al 2 o 3 Layer thickness variation curve. It can be seen that Al 2 o 3 The thickness of the film determines the position of the absorption peak of the F-P resonator. Al 2 o 3 The thickness of the layer can adjust the propagation phase of the light wave in the film structure, and achieve coherent extinction for the light beam satisfying the wavelength band of λ / 4n optical thickness. It can be seen that when Al 2 o 3 When the thickness of the layer increases, the position of the absorption peak of the device at high temperature moves to the long-wave direction, and the a...

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Abstract

The invention discloses a VO2-based multilayer film structure and a preparation method of a product thereof, and relates to the technical field of thermal control of spacecrafts. A magnetron sputtering method is utilized, a monocrystalline silicon wafer in the (100) direction is used as a substrate, and a metal titanium target, a metal silver target, a metal aluminum target and a metal vanadium target are sequentially adopted for preparing the VO2-based multilayer film structure. The VO2-based multi-layer thin film structure prepared by the invention can enable an intelligent thermal control radiation device to realize low-temperature low thermal conductivity, high-temperature high thermal conductivity and low solar absorptivity, and has good thermal control performance and thermal shock resistance, the sunlight absorptivity can reach 27.5%, the integral emissivity within the range of 5-15 microns is 0.26 and 0.91 at room temperature and 100 DEG C respectively, and the VO2-based multi-layer thin film structure can be applied to the intelligent thermal control radiation device. And the modulation amplitude of the emissivity can reach 0.65.

Description

technical field [0001] The invention relates to the technical field of spacecraft thermal control, in particular to a VO 2 Based multilayer thin film structure and its preparation method. Background technique [0002] With the continuous development of aerospace technology, the miniaturization of spacecraft poses challenges to thermal control technology. As an important spacecraft thermal control technology, Smart Radiator Device (SRD) is of great significance for reducing the volume and load of spacecraft and adapting to the harsh and complex orbital space environment. Thermally induced phase change material vanadium dioxide (VO 2 ) has become the most potential SRD functional material due to its high thermochromic modulation efficiency, fast response speed, and adjustable phase transition temperature close to room temperature. [0003] When a spacecraft is performing a space orbit mission, the external ambient temperature will change drastically with the movement of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/08C23C14/16C23C14/58
CPCC23C14/35C23C14/165C23C14/025C23C14/0036C23C14/081C23C14/083C23C14/5806Y02P70/50
Inventor 金海波凌晨李静波王晓乾赵政晶李东来
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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