A room-temperature green synthesis method of deep blue perovskite quantum dots and its application in the preparation of perovskite light-emitting diodes
A light-emitting diode, green synthesis technology, applied in luminescent materials, chemical instruments and methods, nano-optics, etc., can solve the problems of affecting charge transport performance, poor crystallinity of perovskite quantum dot films, environmental damage, etc., and achieve good applications. and development potential, conducive to transmission, and the effect of reducing pollution
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Embodiment 1
[0066] Example 1 Preparation of perovskite quantum dots by the method of the present invention
[0067] In the room temperature air environment, the ligand-assisted method is used to synthesize deep blue perovskite quantum dots. The schematic diagram of the synthesis process of the perovskite quantum dots in this embodiment is as follows figure 1 shown.
[0068] The specific synthesis process is as follows:
[0069] (1) Cs-containing precursor: Mix and dissolve 0.0586 g of cesium carbonate and 100 μL of glacial acetic acid, put it in a 5 mL sample bottle, and sonicate until the solid is fully dissolved.
[0070] (2) Pb-containing precursor: Mix 0.1835 g of lead bromide with 1 mL of hydrobromic acid aqueous solution, put it in a 5 mL sample bottle, and sonicate until the solid is completely dissolved.
[0071] (3) Take the above 5 μL of Cs precursor, drop it into 10 mL of ethyl acetate, add 5 μL of octylamine and 5 μL of tert-butylamine ligand in sequence at 720 rpm stirring...
Embodiment 2
[0084] Perovskite light-emitting diodes were prepared by using the perovskite quantum dots prepared in Example 1.
[0085]1) The ITO anode was ultrasonically cleaned with acetone, ethanol, and deionized water in sequence, and the surface was blown dry with nitrogen flow, and placed in an oven at 120 °C for drying. After the ITO anode was cooled, it was treated with ultraviolet ozone for 20 min. Then, the PEDOT:PSS solution was spin-coated on the ITO surface and annealed on a hot stage at 120 °C for 20 min to obtain a hole transport layer with a thickness of 30 nm.
[0086] 2) The ITO anode spin-coated with the hole transport layer was placed in a nitrogen-filled glove box, and the quantum dot solution was spin-coated on the surface of the hole transport layer at 1000 rpm for 10 spins, each spin-coating The time was 30 s, and the thickness of the light-emitting layer thus prepared was 20 nm.
[0087] 3) Place the above-mentioned ITO glass spin-coated with quantum dots in a va...
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