Unlock instant, AI-driven research and patent intelligence for your innovation.

Organic memristor with ultralow operating voltage and preparation method thereof

A technology of operating voltage and memristor, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of high operating voltage and poor stability, and achieve high retention characteristics, simple preparation, and simple structure design. Effect

Pending Publication Date: 2022-05-17
NANJING UNIV OF POSTS & TELECOMM
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Effectively solve the problems of high operating voltage and poor stability of existing organic memristors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic memristor with ultralow operating voltage and preparation method thereof
  • Organic memristor with ultralow operating voltage and preparation method thereof
  • Organic memristor with ultralow operating voltage and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] An organic memristor with ultra-low operating voltage, such as figure 1 As shown, the memristor is a vertical sandwich structure, which sequentially includes a substrate, a bottom electrode, an organic functional layer and a top electrode from bottom to top; wherein, the organic functional layer is spin-coated on the bottom electrode with an organic functional layer solution The nano film is prepared, and the organic functional layer solution is formed by dissolving sodium copper chlorophyllin in ultrapure water.

[0043] The preparation method of the above-mentioned organic memristor, the specific steps are as follows:

[0044] (1) Preparation of an organic functional layer solution: Dissolve the sodium copper chlorophyllin material in an ultrapure water solvent at a concentration of 20 mg / mL, and heat at 60° C. for 5 hours to completely dissolve it to obtain an organic functional layer solution.

[0045] The structural formula of sodium copper chlorophyllin is shown ...

Embodiment 2

[0060] A method for preparing an organic memristor, the specific steps are as follows:

[0061] (1) Preparation of an organic functional layer solution: dissolving the sodium copper chlorophyllin material in an ultrapure water solvent at a concentration of 20 mg / mL to obtain an organic functional layer solution.

[0062] (2) Choose glass as the substrate, generate a layer of indium tin oxide on the glass, with a thickness of 185nm, to form ITO conductive glass, and clean the ITO conductive glass with ITO cleaning agent (once) and ultrapure water (twice) for 30min, Then it was blown dry with ordinary nitrogen and placed in an oven at 120°C for 30 minutes to dry.

[0063] (3) Treat the dried ITO conductive glass with ultraviolet and ozone for 30 minutes.

[0064] (4) Place the substrate in the center of the spin-coating table, use a pipette gun to draw 150-200 μL of the organic functional layer solution to evenly cover the substrate, adjust the rotation speed and time (first ad...

Embodiment 3

[0071] A method for preparing an organic memristor, the specific steps are as follows:

[0072] (1) Preparation of an organic functional layer solution: Dissolve the sodium copper chlorophyllin material in an ultrapure water solvent at a concentration of 17.5 mg / mL, and heat at 60° C. for 5 hours to completely dissolve it to obtain an organic functional layer solution.

[0073] (2) Choose glass as the substrate, generate a layer of indium tin oxide on the glass, with a thickness of 185nm, to form ITO conductive glass, and clean the ITO conductive glass with ITO cleaning agent (once) and ultrapure water (twice) for 30min, Then it was blown dry with ordinary nitrogen and placed in an oven at 120°C for 30 minutes to dry.

[0074] (3) Treat the dried ITO conductive glass with ultraviolet and ozone for 30 minutes.

[0075] (4) Place the substrate in the center of the spin-coating table, use a pipette gun to draw 150-200 μL of the organic functional layer solution to evenly cover t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic memristor with ultralow operating voltage and a preparation method thereof, the memristor is of a vertical sandwich structure, and the memristor sequentially comprises a substrate, a bottom electrode, an organic functional layer and a top electrode from bottom to top; wherein the organic functional layer is a nano-film prepared by spin-coating an organic functional layer solution on the bottom electrode, the organic functional layer solution is formed by dissolving sodium copper chlorophyllin in ultrapure water, and the structural formula of the sodium copper chlorophyllin is shown as a formula (I). According to the invention, small and medium-sized molecules-sodium copper chlorophyllin (organic salt) are used, the problem of easy crystallization in the spin-coating process based on sodium copper chlorophyllin is solved by controlling spin-coating process parameters, a uniform and smooth film comparable to an evaporation mode is successfully prepared by spin-coating in a water solvent, and a vertical sandwich structure device based on ITO / sodium copper chlorophyllin / Ag is prepared. Finally, ultralow operation voltage, high switch ratio and high retention characteristic are realized, and read-write-erase cycles are more than 6000 times.

Description

technical field [0001] The invention belongs to the field of organic electronics and information technology, and relates to an organic diode memristor, in particular to an organic memristor with ultra-low operating voltage and a preparation method thereof. Background technique [0002] With the failure of Moore's Law, the future is about to enter the post-Moore's Law era, and the demand for data storage and processing continues to grow, and there is an urgent need for an emerging technology to take the lead. Memristor provides a new opportunity to overcome the shortcomings of traditional memory chips. It can be used as a non-volatile memory. Its device structure is simple, RRAM operation speed is fast, low power consumption; long write and erase endurance and retention characteristics, using Different operation methods can realize multi-valued storage of RRAM devices; it has excellent size scalability and good compatibility with current CMOS processes, providing potential fo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/05H01L51/40B82Y30/00
CPCB82Y30/00H10K71/12H10K85/371H10K10/50
Inventor 仪明东吴永乐李雯张韬李佳钰
Owner NANJING UNIV OF POSTS & TELECOMM