Polymer, photoresist, photoresist layer and photoetching process

A technology of photoresist layer and polymer, which is applied in the field of photoresist layer and photolithography process, photoresist, and polymer, and can solve the problems of photoresist heat resistance, adverse effects on device performance, and rise in substrate temperature and other problems, to achieve the effect of good imaging, high production efficiency, and balanced solubility

Pending Publication Date: 2022-05-27
苏州理硕科技有限公司
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  • Abstract
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Problems solved by technology

However, in the process of processing, the conditions of etching, ion implantation, electroplating and other processes often cause the temperature of the substrate to rise, and sometimes even exceed the glass transition point temperature of traditional photoresists, causing the photoresist to soften and flow, resulting in dimensional changes. It has a negative impact on device performance, therefore, the heat resistance of traditional photoresists needs to be improved

Method used

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  • Polymer, photoresist, photoresist layer and photoetching process
  • Polymer, photoresist, photoresist layer and photoetching process
  • Polymer, photoresist, photoresist layer and photoetching process

Examples

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preparation example Construction

[0104] The present invention also provides a preparation method of the aforementioned polymer, comprising the following steps:

[0105] Will with esterification agent carry out the esterification reaction, and then combine the product of the esterification reaction with A condensation reaction is carried out to prepare the polymer.

[0106] In some embodiments, in order to improve the condensation reaction activity, the product of the aforementioned esterification reaction can be subjected to acylation treatment, and the acylation treatment can use any acylation reagent known in the art, and a typical example can be thionyl chloride.

[0107] In some embodiments, the condensation reaction may be catalytic condensation or high temperature dehydration condensation.

[0108] Preferably, the Dissolved in a solvent, the product of the aforementioned esterification reaction was then slowly added dropwise to the solution. The solvent can be selected from N-methylpyrrolidone....

Embodiment 1

[0159] (1) under ice-water mixed bath condition, add 100mL NMP (N-methylpyrrolidone) solvent, 21.8g (100mmol) pyromellitic dianhydride to the reactor, then add 4-hydroxybenzyl alcohol 14.9g ( 120mmol), after stirring at room temperature for 2 hours, the reaction kettle was placed in the methanol refrigerant refrigeration tank of -20 ° C, and then slowly dripped 50 mL of thionyl chloride into the reaction kettle until all solids were completely dissolved, and taken out from the refrigerant. The reaction kettle was stirred at room temperature for 3 hours, and the excess thionyl chloride was distilled off under reduced pressure at 50 ° C to obtain 31.9 g of the chlorinated product;

[0160] (2) add 100mL NMP in the above-mentioned reactor that the product after chlorination is housed, stir until the solid is completely dissolved, put into an ice-water bath, while stirring will be dissolved in the 3,3'-dihydroxyl linkage in the NMP of 20ml Aniline (HAB) 21.6g (100mmol) was slowly ...

Embodiment 2

[0163] Basically the same as Example 1, the difference is that in step (1), the 4,4'-oxydiphthalic anhydride of an equivalent amount is used instead of pyromellitic dianhydride, and the polymer obtained in step (2) is The weight average molecular weight was 38500 Da.

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Abstract

The invention relates to the technical field of photoetching materials, in particular to a polymer, photoresist, a photoresist layer and a photoetching process. The polymer shown in the formula I is adopted as the photoresist raw material, the weight-average molecular weight of the polymer is limited to be within a certain range, compared with traditional phenolic resin and other resin raw materials, the polymer has better heat resistance and stability, and the prepared photoresist layer can be suitable for more harsh device processing conditions; according to the present invention, the solubility in the alkaline developing solution is moderate, the solubility in the common photoresist solvent is good, the solubility can be well balanced, and compared with the traditional technology, the imaging is good and fine, and the production efficiency is high.

Description

technical field [0001] The present invention relates to the technical field of photolithography materials, in particular to polymers, photoresist, photoresist layers and photolithography processes. Background technique [0002] With the development of semiconductor technology, the precision of lithography technology has been greatly improved. It has developed from conventional optical technology to the application of new technologies such as electron beam, X-ray, micro-ion beam, and laser. It is widely used in flat panel displays and chip modules. or component processing. However, during the processing, the conditions of etching, ion implantation, electroplating and other processes often lead to the rise of the substrate temperature, sometimes even exceeding the glass transition temperature of the traditional photoresist, causing the photoresist to soften and flow, resulting in dimensional changes, The device performance is adversely affected. Therefore, the thermal resista...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G69/44G03F7/027G03F7/32
CPCC08G69/44G03F7/027G03F7/322
Inventor 王晓伟
Owner 苏州理硕科技有限公司
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