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Low-power-consumption transverse power device with anode groove

A technology of lateral power devices and anode slots, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the reliability of devices in parallel use, and achieve the suppression of snapback phenomenon, increase the hole injection area, and low conduction voltage drop Effect

Active Publication Date: 2022-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to improve the trade-off relationship between turn-on voltage drop and turn-off loss of LIGBT devices, the usual method is to introduce an anode short-circuit structure, that is, introduce a short-circuited anode N+ region next to the anode P+, ​​so that when the device is turned off, it introduces a path to extract electrons. The passageway speeds up the elimination of excess carriers and reduces the turn-off loss, but the anode short-circuit structure causes the voltage snapback effect caused by the conversion of the carrier unipolar conduction mode to the bipolar conduction mode when the device is turned on. , reducing the reliability of devices used in parallel

Method used

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  • Low-power-consumption transverse power device with anode groove
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  • Low-power-consumption transverse power device with anode groove

Examples

Experimental program
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Effect test

Embodiment 1

[0021] like figure 1 As shown in the figure, the low-power LIGBT with anode groove in this example includes a P substrate 1, a buried oxide layer 2, a top semiconductor layer and a field oxide layer 72 that are stacked in sequence from bottom to top; the top semiconductor layer Along the lateral direction of the device, it includes a cathode structure, a gate structure, an N drift region 3, an anode structure and an anode cell structure;

[0022] The cathode structure is located at one end of the upper layer of the N drift region 3, including a P well region 4, a P+ body contact region 5, an N+ cathode region 6 and a conductive material 81; the P well region 4 is located at one end of the upper layer of the N drift region 3, and the P+ The body contact region 5 and the N+ cathode region 6 are in contact with each other and are located at one end of the inner upper surface of the P well region 4 away from the N drift region 3, and the N+ cathode region 6 is on the side close to...

Embodiment 2

[0030] like figure 2 As shown, this example and Example 1 figure 1 The difference is that the dielectric groove 73 of the anode groove structure includes the P-type polysilicon region 16, and the sidewall and lower surface of the P-type polysilicon region 16 are surrounded by the dielectric groove 73. It is easier to achieve a smooth surface than silicon dioxide, and the P-type polysilicon region in the new device of this example is easier to achieve a smooth upper surface in the process.

Embodiment 3

[0032] like image 3 As shown, this example and the one in Example 1 figure 1 or in Example 2 figure 2 The difference is that the doping type and concentration of the N-type doped region 13 of the anode trench structure are the same as those of the N-drift region 3. Compared with Example 1 or Example 2, the N-type doped region 13 in the new device of this example is the same. Since the doping concentration is the same as that of the N drift region 3, it is easier to implement in the process.

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Abstract

The invention discloses a low-power-consumption power lateral insulated gate bipolar transistor (LIGBT) device with an anode groove. Compared with a traditional anode short circuit structure, an anode groove structure is introduced to an anode end and comprises a medium in an anode groove, a U-shaped P doped region surrounding the medium and an N-type doped region which is located on the side, away from a drift region, of the anode groove and makes contact with the U-shaped P doped region, and one end of the U-shaped P doped region is connected with an anode. And a common leading-out end of the other end and the surface of the N-type doped region is a floating composite electrode. During forward conduction, the U-shaped P doped region increases the hole injection area, enhances the conductivity modulation effect, and effectively reduces the conduction voltage; under low anode voltage, the U-shaped P-doped region and the N-type doped region are mutually exhausted, the anode distribution resistance is increased, and the snapback phenomenon is effectively inhibited; in the turn-off process, the depletion region of the N-type doped region is narrowed due to the increase of the forward voltage, an electron extraction channel is provided and is eliminated through the composite electrode, and thus the turn-off loss is reduced.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and relates to a low power consumption power LIGBT (Lateral Insulated Gate Bipolar Transistor, lateral insulated gate bipolar transistor) with an anode groove. Background technique [0002] Insulated gate bipolar transistors (IGBTs) combine the high input impedance of semiconductor field effect transistors with the characteristics of bipolar transistor conductance modulation. It is used in high-power fields of power electronics such as smart grid, rail transit, and industrial control. Compared with vertical IGBTs, LIGBTs are easy to integrate on silicon-based and SOI-based, and SOI-based LIGBTs can achieve electrical isolation of devices and have the advantages of good insulation performance and low leakage current, so they are widely used in high-voltage integrated circuits. [0003] Conventional LIGBTs store a large amount of excess carriers due to the conductance modulation effec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/08H01L29/739
CPCH01L29/7394H01L29/0843
Inventor 罗小蓉王俊楠戴恺纬朱鹏臣杨可萌魏杰马臻孙燕
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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