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LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof

A technology of epitaxial structure and nitrogen polarity, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of P-type ohmic contact and hole supply, crystal defects, and acceptor impurity magnesium ionization difficulties, etc., to achieve the solution of P Type ohmic contact, enhanced bonding ability, and the effect of solving the difficulty of hole supply

Active Publication Date: 2022-07-29
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the energy level of the acceptor impurity magnesium (Mg) in the P-type semiconductor is very high, which makes the ionization of the acceptor impurity magnesium (Mg) difficult (170meV), and its ionization The conversion rate is only 1%, and a higher hole concentration cannot be obtained simply by increasing the doping concentration of magnesium (Mg), because crystal defects appear after heavy doping, and the compensation for acceptor doping comes from crystal defects ( self-compensation), which affects the acceptor doping concentration and acceptor level height
The low carrier concentration limits the tunneling current required to form a low-resistance ohmic contact
However, due to the increase of contact resistance, the working voltage will increase, which will affect the luminous efficiency and electrical yield of LED to a certain extent.
Therefore, it is difficult to form a P-type ohmic contact and hole supply in the prior art. It is necessary to provide a design and preparation method for the LED epitaxial structure of a P-type ohmic contact layer with nitrogen polarity, which can reduce the VF (forward voltage ), to further improve the luminous efficiency and electrical yield of LED

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  • LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof
  • LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof
  • LED epitaxial structure with nitrogen polarity contact layer and preparation method thereof

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preparation example Construction

[0042] Another aspect of the present application provides a method for fabricating an LED epitaxial structure with a nitrogen polar contact layer, comprising:

[0043] obtain a substrate;

[0044] A buffer layer, a three-dimensional nucleation layer, an undoped GaN layer, an N-type GaN layer, an InGaN / GaN multiple quantum well layer, a P-type AlGaN electron blocking layer, a P-type GaN layer and a nitrogen electrode are sequentially grown on the substrate P-type ohmic contact layer;

[0045] Wherein, when growing the nitrogen-polar P-type ohmic contact layer, the growth method includes growing nitrogen-polar P-type In on the P-type GaN layer a Ga 1-a N layer to grow the nitrogen-polar P-type ohmic contact layer; or alternately grow a plurality of nitrogen-polar P-type In a Ga 1-a N layer and SiN X mask layer to grow the nitrogen polar P-type ohmic contact layer.

[0046] Specifically, the substrate is one of sapphire, aluminum nitride, silicon or silicon carbide.

[004...

Embodiment 1

[0060] In order to facilitate the understanding of the present invention, the following describes the preparation method of the LED epitaxial structure with a nitrogen polar contact layer in the present application with a specific embodiment, and the method includes the following steps:

[0061] Prepare buffer layer on substrate: deposit AlN buffer layer or GaN buffer layer or AlGaN buffer layer on the substrate by metal organic vapor chemical deposition method, pass high-purity NH 3 As N (nitrogen) source, pass trimethyl gallium (TMGa) as Ga source, pass trimethyl aluminum (TMAl) as aluminum source, and the reaction chamber growth pressure is 60-200torr to deposit AlN buffer on the substrate layer or GaN buffer layer or AlGaN buffer layer.

[0062] Preparation of three-dimensional nucleation layer: using metal organic vapor chemical deposition method to pass trimethyl gallium (TMGa) as a Ga source on the buffer layer, the growth temperature is increased to 1060-1090 ° C, to g...

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Abstract

The invention provides an LED epitaxial structure with a nitrogen polarity contact layer and a preparation method thereof, and the structure comprises a substrate, a buffer layer, a three-dimensional nucleating layer, an undoped GaN layer, an N-type GaN layer, an InGaN / GaN multi-quantum well layer, a P-type AlGaN electron blocking layer and a P-type GaN layer which are stacked in sequence, and also comprises a nitrogen polarity P-type ohmic contact layer stacked on the P-type GaN layer, the nitrogen polarity P-type ohmic contact layer comprises at least one nitrogen polarity P-type In < x > Ga < 1-x > N layer. According to the LED epitaxial structure with the nitrogen polarity contact layer and the preparation method of the LED epitaxial structure, the nitrogen polarity P-type In < x > Ga < 1-x > N layer is arranged for forming nitrogen polarity P-type ohmic contact, so that the defect that the P-type ohmic contact is difficult to form in the prior art is overcome.

Description

technical field [0001] The invention relates to the field of chip technology, in particular to an LED epitaxial structure with a nitrogen polar contact layer and a preparation method thereof. Background technique [0002] LED has the advantages of energy saving, environmental protection, long life and so on. It is the third generation of electric lighting source after incandescent lamp and fluorescent lamp. Nowadays, LED has been widely used in people's daily life, such as general lighting, indicator lights, toys, traffic lights, mobile phones, large-size display screens, architectural landscape decoration, automotive lights, etc. However, during the advancement of LED lighting, it was found that the P-type ohmic contact characteristics of LEDs directly affect the efficiency and reliability of the entire device. [0003] According to the formation mechanism of ohmic contact, the preparation of P-type ohmic contact of GaN needs to select a metal whose work function is greate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/06H01L33/00
CPCH01L33/02H01L33/06H01L33/0075
Inventor 谢志文张铭信陈铭胜
Owner JIANGXI ZHAO CHI SEMICON CO LTD