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Image sensors made of organic semiconductors

A sensor and semiconductor technology, applied in the direction of organic semiconductor devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as small light response

Inactive Publication Date: 2004-12-22
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although there were early reports of diodes using organic molecules and conjugated polymers as early as the 1980s, only relatively small photoresponses were observed [For an early review of organic photodiodes, see: G.A. Chamberlain, Solar Energy Batteries (SolarCells) 8, 47 (1983)]

Method used

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  • Image sensors made of organic semiconductors
  • Image sensors made of organic semiconductors
  • Image sensors made of organic semiconductors

Examples

Experimental program
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specific Embodiment 1

[0152] Use as Figure 1A The metal / polymer / metal sandwich structure shown in makes the image element. In this embodiment, at room temperature, a thin P3OT film (12) with a thickness of ~2000 Å is spin-cast on a transparent ITO / glass substrate (11 / 14). Then a gold layer was evaporated on it as a counter electrode (13). Since the work function of gold is higher than that of ITO, the anode of the device is gold, and the transparent ITO electrode is the cathode electrode. The device shows high light response in the visible and ultraviolet regions. Figure 8 Shown in is the photoresponse data series measured under -15V bias voltage. As a comparison, the photo also shows the photoresponse of photovoltaic cells made of amorphous silicon.

[0153] This specific example proves that the polymer light sensor can be used for the detection of visible light and ultraviolet light, and has high light responsiveness. Its quantum efficiency is comparable to that of inorganic semiconductor photovolta...

specific Embodiment 2

[0154] according to Figure 1A The structure shown produced an image element with MEH-PPV film and with PPV film. The patterned ITO on the glass substrate is used as the substrate, and Al is used as the counter electrode (13). Under -10V bias, when the photon energy is less than 580nm, the photosensitivity of the MEH-PPV photovoltaic cell is 50-100mA / Watt. This proves an organic light sensor that is sensitive to the green and blue parts of the visible spectrum. When the photon energy is less than 480nm, the photosensitivity of the PPV photocell is 50~150mA / Watt. This proves an organic light sensor that is only sensitive to blue light and ultraviolet radiation.

[0155] This specific example proves that proper selection of organic light sensing materials can change the long wavelength cut-off of the spectral response.

specific Embodiment 3

[0156] The experiment of specific example 2 was repeated using a polymer charge transport blend made of P3OT:PCBM, where PCBM has electronic properties similar to C 60 A kind of fullerene molecule. The spectral response of the image element with a thickness of ~2500 is as Picture 9 Shown. The data is obtained under a reverse bias of -2V. When the wavelength is shorter than 650nm, its response distribution is similar to that of a P3OT device. The response curve can be extended to near infrared with a wavelength greater than 800nm.

[0157] This specific example proves that the organic photodiode made by using the charge transport blend can achieve high photoresponse under low bias voltage (electric field). Through proper selection of organic materials, its spectral response can cover the ultraviolet, visible and near-infrared spectral regions.

[0158] Example 4

[0159] The image element with ITO / MEH-PPV(1000) / MEH-PPV:PCBM(1000) / Al structure was produced. Its spectral response...

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Abstract

Image sensors with monochromatic or multi-color response made from organic semiconductors are disclosed. The image sensors are comprised of image sensing elements (pixels) each of which comprises a thin layer (or multiple layers) of organic semiconductor(s) sandwiched between conductive electrodes. These image sensors can be integrated or hybridized with electronic or optical devices on the same substrate or on different substrates. The electrical output signals from the image sensors resulting from the input image are probed by a circuit connected to the electrodes. The spectral response of the image sensing, elements can be modified and adjusted to desired spectral profiles through material selection, through device thickness adjustment and / or through optical filtering. Several approaches for achieving red, green, and blue full-color detection are disclosed. Similar approaches can be used for multiple-band detection (wavelength multiplexing) in desired response profiles and in other selected spectral ranges.

Description

[0001] The present invention claims the rights in the U.S. Provisional Application No. 60 / 73,374 filed on February 2, 1998, which is included in this application as a reference in its entirety. [0002] The present invention is partially supported by the government and funded by the Ministry of National Defense. The project number is No. N00421-97-C-1075. Technical field [0003] The present invention relates to solid-state imaging elements useful in electronic cameras and other related applications. It provides a type of high-sensitivity image sensor element that can be assembled into an array of monochrome or full-color image sensor devices. These image elements are composed of one (or several) organic semiconductor thin layers sandwiched between two conductive electrodes with different or similar work functions. The image signal is detected by a circuit connected to the two electrodes. Through methods such as material selection, device thickness adjustment and / or optical filteri...

Claims

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Application Information

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IPC IPC(8): G02B5/20H01L27/00H01L27/146H01L27/30H01L31/10H01L49/02H01L51/00H01L51/30H01L51/40H01L51/42
CPCB82Y10/00H01L27/14647H01L51/0034H01L51/0036H01L51/0035H01L51/4206H01L27/307H01L27/14621H01L51/424H01L51/4253H01L27/14603H01L51/0038H01L51/004H01L51/0046H01L2251/308Y02E10/50H01L27/14692Y02E10/549H10K39/32H10K85/10H10K85/111H10K85/113H10K85/114H10K85/141H10K85/211H10K30/20H10K30/30H10K2102/103H10K30/451
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