Polyimide resin precursor solution, laminates for electronic components made by using the solution and process for production of the laminates
A technology of polyimide resin and electronic components, applied in the direction of circuit substrate materials, printed circuit parts, conductive layers on insulating carriers, etc., can solve the problems of metal ion migration, loss of resin insulation, etc.
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Embodiment 1
[0052] A solution in which a commercially available palladium acetylacetone complex (hereinafter referred to as a palladium complex) was dissolved in N-methyl 2-pyrrolidone (hereinafter referred to as NMP) was added to the polyimide compound of Toray Co., Ltd. In the amine resin precursor varnish "Treni-su" #3000, the varnish solution was adjusted so that the palladium complex content of the average varnish solution was 1 wt / vol%. The varnish solution contained a palladium complex at an average polyimide resin precursor of approximately 5 wt / vol%.
[0053] Furthermore, the so-called 1 wt / vol% refers to, for example, the concentration at which 0.01 g of the palladium complex is dissolved in 1 ml of "Treni-su" varnish solution.
[0054] Next, a 10×10 cm (thickness: 50 μm) test piece of polyimide substrate “U-Pilex-S” produced by Ube Industries, Ltd. was treated with a 1% NaOH aqueous solution and a 1% HCl aqueous solution, and washed with pure water. After drying, the above-men...
Embodiment 2
[0061] The palladium complex content of the polyimide resin precursor solution in Example 1 was changed to 0.5 wt / vol%, and the same treatment was performed to obtain a substrate for electronic components with a copper film thickness of 22 μm. As a result of measuring the peel strength between the metal portion of the obtained base material and the polyimide resin layer by the method specified in JISC-6481, it was 12 N / cm (1200 gf / cm).
Embodiment 3
[0063] The ultraviolet irradiation dose of embodiment 1 is changed to 7500mJ / cm 2 , perform the same processing.
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Abstract
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