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Soft-magnetic multilayer film force-sensitive sensor and preparation method thereof

A multi-layer film and sensor technology, applied in the field of sensors, can solve the problems of fragile thin strips, difficult installation, welding, etc., and achieve the effects of easy mass production, low cost, and fast response speed.

Inactive Publication Date: 2006-09-13
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, wires and thin strips will encounter many problems in terms of practicality, repeatability of device performance, mass production, and cooperation with detection circuits, such as welding of wires and thin strips in circuits, difficulty in installation, rolling problems, etc. The thin strip made is easy to break, etc.

Method used

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  • Soft-magnetic multilayer film force-sensitive sensor and preparation method thereof
  • Soft-magnetic multilayer film force-sensitive sensor and preparation method thereof
  • Soft-magnetic multilayer film force-sensitive sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] (1) the double-sided positive glue of the double-sided oxidized silicon substrate 9 that has been cleaned and processed, such as Figure 4 shown. The thickness of the photoresist 8 is 5 μm, the drying temperature of the photoresist is 95 ° C, and the drying time is 1 hour; after double-sided exposure and development, silicon dioxide is etched in BHF etching solution, and finally the photoresist is removed to obtain a double-sided Alignment marks engraved on the surface and windows etched into silicon; Figure 4 Among them, 10 is SiO 2 (2) carry out wet etching to prepare silicon cantilever beam on one side of silicon chip (referred to as A face), as Figure 5 As shown, silicon is etched using potassium hydroxide (KOH) etching solution, the etching temperature is 80°C, and the solution concentration is KOH:H 2 O=44:100, the etching depth is 150 μm; (3) sputtering soft magnetic FeSiB film 11, such as Figure 6 As shown, the thickness of the FeSiB film is 2 μm; (4) spu...

Embodiment 2

[0062] (1) throw positive glue 8 on both sides of the double-sided oxidized silicon wafer substrate that has been cleaned, such as Figure 4 shown. The photoresist thickness is 5 μm, the photoresist drying temperature is 90°C, and the time is 1 hour; after double-sided exposure and development, silicon dioxide is etched in BHF etching solution, and finally the photoresist is removed to obtain a double-sided cover. Engraving alignment symbols and etching silicon windows; (2) performing wet etching on one side of the silicon wafer (called A-side) to prepare silicon cantilever beams, such as Figure 5 As shown, silicon is etched using potassium hydroxide (KOH) etching solution, the etching temperature is 78°C, and the solution concentration is KOH:H 2 O=44:100, etching depth is 150μm; (3) sputtering soft magnetic FeSiB film, such as Figure 6 As shown, the thickness of the FeSiB film is 4 μm; (4) sputtering the underlying Cu, such as Figure 7 As shown, the thickness is 150nm;...

Embodiment 3

[0065] (1) throw positive glue 8 on both sides of the double-sided oxidized silicon wafer substrate that has been cleaned, such as Figure 4 shown. The photoresist thickness is 5 μm, the photoresist drying temperature is 95°C, and the time is 30 minutes; after double-sided exposure and development, silicon dioxide is etched in BHF etching solution, and finally the photoresist is removed to obtain a double-sided overlay Align the symbols and etch the silicon window; (2) perform wet etching on one side of the silicon wafer (referred to as the A side) to prepare the silicon cantilever beam, such as Figure 5 As shown, silicon is etched using potassium hydroxide (KOH) etching solution, the etching temperature is 80°C, and the solution concentration is KOH:H 2 O=44:100, etching depth is 150μm; (3) sputtering soft magnetic FeSiB film, such as Figure 6 As shown, the thickness of the FeSiB film is 6 μm; (4) sputtering the underlying Cu, such as Figure 7 As shown, the thickness is...

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Abstract

This invention provides a soft-magnetic multiple-film piezo-sensor and its process method, wherein, the piezo-sensor is a sandwich structure composed of central copper conductive layer, soft magnetic thin film coated on the surface of copper layer and top protection layer. When in process, it adopts photo etching technique to get the aligning signs of double side cover etching; it adopts thin film process technique and micro-electroplating technique to get soft-magnetic multiple-film piezo-sensor; it adopts physics etching technique to remove the under layer and adopts special chemical formula to wet etch the soft-magnetic multiple-film material to form piezo-sensor; finally it adopts silicon wet etching technique to form piezo-sensor micro structure.

Description

technical field [0001] The invention relates to a force-sensitive sensor and a preparation method thereof, in particular to a microfabricated force-sensitive sensor with a zigzag structure based on the stress impedance effect of a soft magnetic multilayer film and a preparation method thereof, belonging to the technical field of sensors. Background technique [0002] With the rapid development of microelectronics technology, some new, miniaturized, high-performance, high-sensitivity and fast-response new force-sensitive sensors are needed in automotive electronics, robotics, biomedical, automation control and construction industries. To monitor parameters around the environment, such as: pressure, stress, strain, moment, vibration, etc. Although early force-sensitive sensors such as magnetostrictive pressure sensors have the characteristics of large load, small deformation and the ability to work in harsh environments, they are bulky and inconvenient for mass production and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/12B81B7/02
Inventor 周勇陈吉安丁文张亚民高孝裕
Owner SHANGHAI JIAOTONG UNIV
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