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Multilayer nano transparent conductive membrane and its preparation method

A transparent conductive film and multi-layer film technology, applied in the field of nano transparent conductive film and its preparation, multi-layer nano transparent conductive film and its preparation field, can solve the problem of reducing reflection effect and poor leakage current, complex process, refractive index resistance rate is not ideal, etc.

Inactive Publication Date: 2003-09-17
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ITO film is used as a dielectric film, its refractive index (n~2.0) and resistivity (2 to 3 orders of magnitude higher than that of Ag and Cu) are not very ideal, and its anti-reflection effect and leakage current are not good, and the sandwich structure The I / M / I optoelectronic properties of the 50nmITO / 12nm AgCu / 50nmITO have the highest electrical performance among the five structures introduced in this paper, and its value is only 24.6×10 -3 Ω -1
What's more, compared with a single ITO film, in I / M / I, although the amount of ITO is reduced, the preparation process of I / M / I adopts DC magnetron reactive sputtering, and a reasonable partial pressure ratio of oxygen and argon must be controlled. , the process is quite complicated, and sometimes it needs post-heating treatment, so the production cost is still high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1: 40nmTiO 2 / 18nmAg / 40nmTiO 2

[0013] The Ag film is divided into three series of 12nm, 15nm and 18nm through computer optimization structure, and TiO 2 The structure of the dielectric layer, TiO 2 Do a full search in the thickness range of 10-200nm, and use T 1μm and R 1700 The symmetrical optimal structure obtained as an evaluation index is: 40nm TiO 2 / 18nmAg / 40nm TiO 2 . The preparation process is as follows: substrate: quartz crystal polished section 35nm×20nm×1nm and Si(111) sheet. Chemical and ultrasonic cleaning. The substrate temperature was 45°C. Vacuum degree: background vacuum 1×10 -2 Pa, after bombarding the substrate with an ion beam for 15 minutes, then pump the vacuum to 1×10 -3 Pa. Raw material and heating source: Ag: 99.9% particles, molybdenum boat resistance wire heating; TiO 2: 99.9% particles, tantalum boat electron gun heating. The deposition rate was 0.3 nm / s. Thickness control: During the film preparation process, the fi...

Embodiment 2

[0015] Example 2: 40nmZnS / 18nmAg / 40nmZnS

[0016] Substrate: Si(111) surface, natural oxidized SiO on the surface of about 5.0nm 2 layer; substrate temperature: 25°C, cleaning: ordinary chemical cleaning followed by ultrasonic cleaning for 10 minutes. System background vacuum: 1×10 -3 Pa. The deposition rate was 0.4 nm / s. Thickness control: During the film preparation process, the film thickness is monitored in real time by a quartz oscillator film thickness monitor, and the thickness is accurately measured by an ellipsometer.

[0017]

Embodiment 3

[0018] Example 3: 40nmTiO 2 / 18nmAg / 166nmTiO 2

[0019] Substrate: Quartz crystal polished section 35nm×20nm×1nm and Si(111) sheet. Chemical and ultrasonic cleaning. The substrate temperature was 45°C. Vacuum degree: background vacuum 3.5×10 -2 Pa, after bombarding the substrate with an ion beam for 12 minutes, then pump the vacuum to 3.0×10 -3 Pa. Raw material and heating source: Ag: 99.9% particles, molybdenum boat resistance wire heating; TiO 2 : 99.9% particles, tantalum boat electron gun heating. The deposition rate was 0.3 nm / s. Thickness control: During the film preparation process, the film thickness is monitored in real time by a quartz oscillator film thickness monitor, and the thickness is accurately measured by an ellipsometer.

[0020]

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Abstract

A multilayered nano transparent conductive film is of alternate structures of dielectric layer and metal layer, and the metal layer is between two dielectric layers which are symmetric in structure or non-symmetric in structure. Its preparing method is to first work out a computer analog program for photoelectric performance of multilayer film according to the characteristic metrix calculation formula of multilayer, the theory of plasma resonance and the electronic transport in metal continuous film, to optimize the design of D / M / D multilayer film structure including selecting and matching ofmaterial quality, film thickness, reflecting rate and conductive rate, predicting of several kinds for D / M / D multilayer film structure, and then to use vacuum vaporation coating method to make D / M / D multilayer film by using accurate film thickness detection system to record film thickness

Description

technical field [0001] The invention relates to a nano transparent conductive film and a preparation method thereof, in particular to a transparent and conductive multilayer nano transparent conductive film used for a transparent electrode of a flat panel display and a preparation method thereof, belonging to the field of nano thin film materials. Background technique [0002] The transparent conductive film should not only have good conductivity, but also have good visible light transmittance and infrared light reflection. Sn-doped indium oxide thin film (ITO) is often widely used in flat liquid crystal displays (LCDs), Electroluminescence display (ELD), plasma display (PD), solar cell electrode film and energy-saving infrared reflective film, etc. Dielectric / metal / dielectric (D / M / D) multilayer films have been widely used as an important low-emissivity film (hot mirror) in the 1980s. However, there were few research reports on it as a transparent conductive film at that t...

Claims

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Application Information

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IPC IPC(8): B32B5/00H01J9/02H01L31/0224
Inventor 蔡珣刘煊杰李景明陈秋龙王振国
Owner SHANGHAI JIAO TONG UNIV
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