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Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same

A technology for insulating films and film-forming components, which is used in plastic/resin/wax insulators, semiconductor/solid-state device manufacturing, organic insulators, etc., and can solve the problems of limited decomposable components and no discovery.

Inactive Publication Date: 2003-12-10
SUMITOMO BAKELITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to obtain a resin composition having microporosity while satisfying not only the requirements for specific permittivity but also the requirements for mechanical properties, electrical properties, water absorption and heat resistance, the combination of resins, techniques for forming blocks and Its thermally decomposable components are extremely limited
The reality is that no technology has been found that meets all the requirements

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0080] The present invention will be described in more detail with reference to the following examples. However, the present invention is not limited to these

[0081] Example.

[0082] The specific permittivity, heat resistance, glass transition temperature, and water absorption of the films prepared in Examples and Comparative Examples were measured according to the following methods, and the cross-sections of the films were observed.

[0083] (1) Specific permittivity

[0084] The specific permittivity was measured at a frequency of 100 kHz using an HP-4284A PRECISION LCR METER manufactured by HEWLETT PACKARD in accordance with the method of Japanese Industrial Standard K6911.

[0085] (2) Heat resistance

[0086] The TG / DTA6200 instrument produced by SEIKO INSTRUMENTS Co. Ltd. was used to perform thermogravimetric analysis of the film in a nitrogen flow of 200 ml / min, with a heating rate of 10° C. / min. The temperature at which the weight loss reached 5% was taken as he...

preparation Embodiment 1

[0094] 10 g (96 mmol) of styrene was dissolved in 100 g of tetrahydrofuran dried under a dry nitrogen atmosphere, and the resulting solution was cooled to -78°C. To the cooled solution, 0.77 ml of a 1.3 mol / liter sec-butyllithium solution (solvent: cyclohexane) was added as a reactant for the reaction, and the resulting reaction mixture was stirred for 3 hours. Then, 0.044 g (1.0 mmol) of ethylene oxide was added, and the resulting solution was stirred for 3 hours. After adding 3 g of methanol to the solution, the solution was concentrated to remove the solvent. The resulting product was dissolved in 100 g of tetrahydrofuran and the resulting solution was filtered. The filtrate was vacuum-dried to obtain a styrene oligomer having a hydroxyl group at the chain end and a number average molecular weight of 9600.

[0095] 93 g (9.68 mmol) of the obtained oligomer were dissolved in 80 g of tetrahydrofuran dried under a dry nitrogen atmosphere. To the resulting solution, 1.15 g (...

preparation Embodiment 2

[0097] Except adopting 38.72g (9.68mmol) number-average molecular weight to be 4000 poly(propylene glycol) monobutyl ether [manufactured by ALDRICH company] to replace the 93g (9.68mmol) number-average molecular weight used in Preparation Example 1 to be the styrene oligomer of 9600 Except, all the other were carried out according to the same steps of Preparation Example 1, thereby obtaining a poly(propylene glycol) oligomer having a 4-aminobenzoate group at the chain end and a number average molecular weight of 2500.

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Abstract

A material for an insulating film, characterized in that it comprises a copolymer prepared by reacting a polyamide having a specific structure and a reactive oligomer as a film forming component; a coating vanish for an insulating film which comprises the material and an organic solvent; an insulating film, characterized in that it comprises a layer of a resin having polybenzoxazole as a primary structure which is prepared by heating the material or the coating vanish to allow to undergo a condensation reaction and a crosslinking reaction, and has micropores; and a semiconductor device which has an inter-layer insulating film for multi-layer wiring and / or a surface protecting layer comprising the insulating film. The material for an insulating film is excellent in electric characteristics, thermal characteristics, mechanical characteristics and the like, and also can be used for producing an insulating film having a reduced dielectric constant.

Description

technical field [0001] The present invention relates to a material for an insulating film, a clear varnish for an insulating film, an insulating film and a semiconductor using the material or the varnish. More specifically, the present invention relates to a material for an insulating film which exhibits excellent electrical, thermal and mechanical properties, is capable of obtaining a low dielectric constant, and is useful as an insulating interlayer film and a surface protection film in semiconductors , an insulating interlayer film of a multilayer circuit, a surface layer of a flexible copper-clad thin laminate, a solder resist film and a liquid crystal alignment film, and an insulating film using the material or the varnish and an insulating film using the material or the varnish semiconductor. Background technique [0002] As materials for semiconductors, inorganic materials and organic materials are used in various ratios in accordance with desired properties. For ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G69/48C08G73/22C08G81/00C08J5/18C09D179/04H01B3/30H01L21/312H05K1/00
CPCC08G69/48C08J2377/00H05K3/4676H01L21/02118H01L21/312C08J5/18H01L21/02282H01L21/02203C08G81/00H01B3/38
Inventor 榎尚史斋藤英纪东田进弘石田雄一
Owner SUMITOMO BAKELITE CO LTD