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Continuous ion adsorbing preparation of multi-component sulfur photoelectric films

A photoelectric thin film and continuous ion technology, applied in the direction of sustainable manufacturing/processing, circuits, electrical components, etc., can solve the problems of large-area preparation difficulties, expensive equipment, waste of raw materials, etc., to achieve pollution-free preparation, less consumables, and easy The effect of recycling

Inactive Publication Date: 2005-05-11
TIANJIN UNIV
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Problems solved by technology

[0004] At present, the existing problems in the preparation of multi-component chalcogenide photoelectric thin films are: (1) The more mature methods for preparing multi-component chalcogenide thin films, such as evaporation or sputtering, need to be reacted in a vacuum, which is not only expensive in equipment cost, easy to pollute, and large-scale preparation Difficult, but also cause a lot of waste of raw materials and difficult to recycle
However, foreign research on it is limited to binary compounds such as CdS, FbS, and ZnS, and there is no report on the preparation of ternary and quaternary chalcogenide photoelectric thin films by SILAR method.

Method used

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Embodiment Construction

[0017] raw material

[0018] The specific process of SILAR method is as follows:

[0019] 1) Preparation of precursor solution:

[0020] a. Weighing: According to the different quality requirements in the above table, weigh CuCl with different amounts of substances 2 , InCl 3 、Na 2 S.

[0021] b. Preparation of mixed cation precursor solution: the weighed CuCl 2 and InCl 3 Dissolve in deionized water to prepare 500mL cationic precursor solution, add 5-10 drops of HCl to adjust to an appropriate pH value of 1.5, and stir to completely dissolve;

[0022] c. Preparation of anion precursor solution: the weighed Na 2 S·9H 2 o 3 Dissolve in deionized water to prepare 500mL anion precursor solution, add 5-10 drops of ammonia water to adjust the pH value to 13, and stir to dissolve completely.

[0023] d. Put the prepared solutions in beakers respectively, let them stand, and filter them for the next step of coating.

[0024] 2) Coating

[0025] After the precurso...

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Abstract

The invention uses forerunner body solution of cation mixed in different ratio to manufacture solar power photo-electricity films, which are CulnS2, CulnSe2, Cu(In, Ga)Se2. The content and ratio of cation forerunner body solution is CuCl2:GaCl3:InCl3= 0.5:0:1-2:1:1. Ph value: 1-3. Sulphion source can use Na2S aqueous solution (ph value is 10-13, concentration is 0.1-1 mole / liter), Na2SeSO2, aqueous solution or thiourea solution. In the above cation forerunner body solution, anion forerunner solution, coating is made through continuing adsorption reaction, and the photo electrode film is obtained after 400-500deg.C heat treatment under argon atmosphere.

Description

technical field [0001] The invention belongs to the continuous ion adsorption reaction preparation method of multi-element chalcogen photoelectric thin film. Background technique [0002] With the rapid development of modern economy, people's demand for energy continues to expand. Conventional energy sources such as coal, oil, and natural gas, which are widely used at present, are bound to face serious shortages due to their non-renewability. In addition, the use of these energy sources is likely to cause great pollution to the environment. Solar power is likely to become the most important energy source in the future due to its renewable, clean and non-polluting characteristics. In recent years, with CuInSe 2 、Cu(In,Ga)Se 2 Thin-film solar cells, represented by chalcogenides, have attracted widespread attention and achieved rapid development due to their high conversion rate, less consumables, cheap substrates, and ease of mass production. [0...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 靳正国石勇刘晓新
Owner TIANJIN UNIV
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