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Nano ceramic dopant, high-dielectric reduction-resistant multilayer ceramic capacitor dielectric material, and their preparation method

A capacitor dielectric and ceramic material technology, applied in the field of electronic materials, can solve the problems of high equipment requirements, long production cycle, complex process, etc., and achieve the effect of good performance repeatability, low cost and simple process

Inactive Publication Date: 2005-08-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the process also has a long production cycle, high equipment requirements, complicated process, and high cost (due to the use of organic alkoxide TBT-Ti(CH 4 h 9 ) 4 and (TBZ-Ti(CH 4 h 9 O) 4 ) and other deficiencies

Method used

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  • Nano ceramic dopant, high-dielectric reduction-resistant multilayer ceramic capacitor dielectric material, and their preparation method
  • Nano ceramic dopant, high-dielectric reduction-resistant multilayer ceramic capacitor dielectric material, and their preparation method

Examples

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preparation example Construction

[0054] (1) The preparation process and particle size control of the base material; U.S.Pat.5,319,517 uses the liquid phase method to synthesize BaTiO 3 , BaZrO 3 and CaTiO 3 Powder is used as the base material, and the present invention adopts submicron ultrafine (Ba, Ca) (Ti, Zr) O 3 as a base. In terms of particle size, both of them can reach submicron level, but there is BaTiO in U.S.Pat.5,319,517 3 , BaZrO 3 and CaTiO 3 The ratio of the three powders is mixed, and the production quality stability of the three powders must be controlled separately, so the risk of production process stability will inevitably increase.

[0055] (2) The preparation process and particle size control of the dopant, which is the most important difference. U.S. Pat. 5,319,517 prepares dopants by mixing solid substances such as oxides and carbonates, ball milling, and drying. Although it is emphasized that the average and maximum particle size of the dopant should be strictly controlled duri...

Embodiment 1

[0113] Embodiment 1: Process 1 is used to prepare nanoscale ceramic material dopant T1. Si:Y:Mn:Pr=1:4:2:2 (mole ratio) in sol-gel. Using process 1, ethyl tetrasilicate, acetylacetone and absolute ethanol are mixed into an organic solution, and the obtained gel is baked at 90°C for 3 days to obtain a dry gel, which is heat-treated at 800°C for 120 minutes Grind in an agate bowl. The particle size distribution of the obtained nano-dopants was observed with a transmission electron microscope (TEM). figure 2 A 100,000-fold TEM photograph of the nano-dopant T1 synthesized at 800°C is given.

Embodiment 2

[0114] Embodiment 2: Using process 2 to prepare an ultra-fine high dielectric resistance reduction multilayer ceramic capacitor dielectric material. The base material in the formula is (Ba 0.97 Ca 0.03 ) 1.001 (Ti 0.807 Zr 0.193 )O 3 . The base material accounts for 99.025%, 99.00% and 98.75% of the overall mass of the porcelain, and the nano-dopant T1 prepared in Example 1 of the present invention accounts for 0.75%, 1% and 1.25% of the overall mass in the sample respectively. The obtained ceramic material is ball-milled after adding appropriate organic additives, and then cast into a membrane, which is stacked with a printed Ni electrode to make a MLCC green embryo. After debinding in the air at 700°C, sinter in a reducing atmosphere at 1200°C for 2 hours (the heating rate and cooling rate are both 200°C / h, the atmosphere is changed from N 2 , H 2 and H 2 O control, oxygen partial pressure maintained at 10 -12 Pa), and then annealed under weak oxidation conditions ...

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Abstract

The present invention belongs to the field of electronic material technology, and especially relates to one kind of ceramic material for capacitor. The present invention provide one kind of ceramic material dopant in nanometer level, and the dopant has the composite oxide aSi+bA+cD+dR as mai component, where an is acceptor element Mg or Mn; D is one or several of V, Gd, Sm, Nd and Pr; R is one or several of rare earth elements Ho, Dy, Y, Yb and Er; and a, b, c and d are molar coefficients, an is 10-70 %, b is 10-40 %, c is 10-40 % and d is 10-40 %.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, in particular to a capacitor ceramic material. Background technique [0002] Multilayer Ceramic Capacitors (MLCC) for short. It stacks the electrode material and the ceramic body alternately and in parallel in multiple layers, and simultaneously fires them as a whole. According to the Electronic Industries Association (EIA) standard, Y5V type MLCC should meet the temperature range of -30-85°C, the capacity temperature change rate <-82% ~ 22%, and the dielectric loss (DF) ≤ 4.0 %. Y5V type MLCC is divided into two categories according to the composition: one is composed of lead-containing relaxor ferroelectrics, and the other is composed of barium titanate (BaTiO 3 ) is a non-lead-based ferroelectric composition. The latter has no pollution to the environment, and its mechanical strength and reliability are higher than the former, so the non-lead-based BaT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/00C04B35/622C04B35/624
Inventor 周晓华张树人钟朝位王升李波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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