62results about How to "Good performance repeatability" patented technology

The invention discloses a catalyst for synthesising methanol by hydrogenation of carbon dioxide. The catalyst is composed of oxides with the following molar ratio based on metal: 20-50% of La, 0-10% of M, 15-35% of Cu, and 2-15% of Zn, wherein M is one or more of Zr, Y, K, Ag, Ce, Pd, Mn, Mg, Fe, Co, Ni or Cr. The catalyst disclosed by the invention has the advantages that preparation is simple, operation is easy, catalyst performance repeatability is good, industrial amplification is easy to realize, and reaction conversion rate and reaction selectivity are high.

The invention discloses a catalyst for synthesizing methanol through CO2 hydrogenation, comprising Cu, Zn, Al, X, halogen and oxygen elements, oxides and halides, wherein the molar ratio of [Cu+Zn+MA] to [Al+Mb] is 2-18; the molar ratio of Cu to Zn is 0.5-5; the molar ratio of MA to [Cu+Zn] is 0-5; the molar ratio of MB to Al is 0-9; the molar ratio of halogen to Al is 0.05-5; MA and MB cannot be 0 at the same time; MA represents a mono-valent or divalent metal ion in X; MB represents a trivalent and/or tetravalent metal ion in X; X is one or a combination of more elements of Li, K, Mg, B, Ga, In, transition metal elements and rare-earth metal elements. The catalyst has the advantages of high carbon dioxide conversion rate, good methanol selectivity and high methanol yield.

The invention discloses a preparation method of a high transparent PVC (Polyvinyl Chloride Resin) special resin with high ageing whiteness and favorable heat resistance performance. The preparation method comprises the following steps of: cleaning and washing a polymerizing kettle, coating a kettle antisticking agent, adding deionized water, a dispersoid agent, a compound peroxide initiator, a chain transfer agent and a polymerization stabilizer, vacuumizing to a certain vacuum degree, adding a vinyl chloride monomer, coldly stirring, then raising temperature to the reaction temperature, timing when polymerization starts, adding a compound heat-resistant terminator after the pressure of the polymerizing kettle is reduced to a process control point, continuously stirring, discharging slurry and drying to obtain the PVC resin. The prepared PVC resin has high ageing whiteness and favorable heat resistance performance and transparency.

A process for synthesizing methyl aminoformate includes the catalytic reaction between methanol, urea and catalyst at 120-200 deg.C, under 0.1-3 MPa for 0.5-20 hr and condensing and recovering ammonia gas. Its advantages are low cost and high selectivity to product.

A nanometer ceramic material dopant, medium material of ceramic capacitor and their production are disclosed. The formula of the dopant consists of aA.bB.cC.dR2 O3.eSiO2; A contains Na2O; B contains one or multiple of MgO and CaO; C contains one or multiple of MnO2 and Co3O4; R contains one of multiple of Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, among them a, b, c, d and e are coefficient, by computing mol%, 0<=a<=10%, 0<=b<=25%, 0<=c<=15%, 20%<=d<=60%, 10%<=e<=50% and b and c can't be zero at same time. Its advantages include large capacity, adjustable material formula, low sintering temperature, less medium loss, high dielectric constant and better reliability.

The invention relates to a preparation method of a MnOx-CeO2 composite semiconductor catalyst which has the function of low-temperature photo-thermal concerted catalytic purification of VOCs and the light-assisted self repairing function. The chemical formula of the MnOx-CeO2 composite semiconductor catalyst is Ce<1-a>MnaO<2-Delta>, wherein a is larger than 0 and smaller than 0.7; the method comprises the following steps: (1) weighing Ce salt and KMnO4, and dissolving in an alkaline solution to obtain a mixed suspension solution; (2) sealing the mixed suspension solution to have a hydrothermal reaction to obtain a precipitate; (3) separating the prepared precipitate, washing, drying and then grinding to obtain the MnOx-CeO2 composite semiconductor catalyst.

The invention discloses a preparation method of a high-compaction-density lithium manganese iron phosphate/carbon composite positive electrode material. The chemical general formula of the material is LiMnxFeyPO4/C, wherein x is more than or equal to 0.5 and less than or equal to 0.9, and x + y is equal to 1. The preparation method comprises the following steps: diluting phosphoric acid for later use, adding a manganese source, an iron source, a dispersing agent and deionized water into a sealable container, and introducing shielding gas; adding diluted phosphoric acid into the sealed container, aging until the pH value is 2.0-5.0, and uniformly nucleating; cleaning the formed precipitate, drying in vacuum, and sintering for the first time at high temperature to form spherical particles A; preparing a solution from lithium hydroxide monohydrate, adding the spherical particles A into the solution, performing spray drying, and performing high-temperature secondary sintering to obtain spherical particles B; and preparing a glucose solution, adding the spherical particles B into the glucose solution, performing spray drying, and performing high-temperature third sintering to obtain the nano spherical lithium manganese iron phosphate/carbon composite material. The electrochemical performance and the compaction density of the material are greatly improved.

The invention relates to a catalyst for preparing carbon monoxide by decomposing carbon dioxide, which is a composite metal oxide obtained by doping Mg and Ca in a cerium-zirconium solid solution. The chemical composition of the catalyst is expressed by the following general formula: Ce0.8-xZr0.2MxO2-x, wherein x equals 0.02-0.1, M is doping metal Mg or Ca, and x is the molar fraction of the doping metal. The catalyst disclosed by the invention has the advantages of high activity, high thermal stability and long service life.

The invention discloses a preparation method of an efficient sodium-based solid decarburization adsorbent. Pre-treatment including washing, roasting and grinding is conducted on a gamma aluminium oxide carrier; an incipient-wetness impregnation method is adopted, wherein the carrier is impregnated in dopant impregnation liquid with the electrolyte cation concentration of 0.1-2.0 mol/L for 6-8 hours, and then the carrier is subjected to drying, roasting and grinding for standby use; a modified carrier obtained in the last step is impregnated in an isovolumetric sodium carbonate solution with the concentration of 0.8-3.8 mol/L for 6-8 hours and subjected to drying, roasting and grinding for standby use; furthermore, a modified adsorbent is impregnated in another sodium-based amino secondaryactive component solution for 6-8 hours and subjected to drying, roasting and grinding, and finally, the target adsorbent is obtained. The adsorbent is mainly applied to thermal power plant tail smokecarbon dioxide purification, and the adsorption/desorption conditions are mild; meanwhile,the adsorbent has the advantages that the preparation method is simple, raw materials are cheap and easy to obtain, large-scale production is feasible, the adsorbent is stable in structure, all components are evenly dispersed, and the decarburization performance is efficient and stable and the like.

The invention provides a high-threshold voltage gallium nitride enhanced transistor structure and a preparation method thereof and relates to semiconductor technology. The high-threshold voltage gallium nitride enhanced transistor structure comprises a substrate, a GaN layer, an AlGaN layer and an insulating gate dielectric layer from bottom to top and is characterized in that the insulating gate dielectric layer comprises an insulating tunnel layer, a fixed charge layer and an insulating cap layer, wherein the fixed charge layer is arranged above the insulating tunnel layer or is embedded at the upper part of the insulating tunnel layer; the insulating cap layer is arranged above the fixed charge layer; and gate metal is arranged above the insulating cap layer. The high-threshold voltage gallium nitride enhanced transistor structure has the beneficial effects that compared with other technology for manufacturing an enhanced GaN field effect transistor, the controllability of the preparation process is good, and the performance repeatability of researched and developed devices is good; and a researched and developed GaN MlSHEMT device has the advantages of good performance, large threshold voltage, large biggest source leakage saturation current density, small gate current leakage and wide operating voltage range, and the research and development demands of a GaN integrated circuit can be fully satisfied.

The invention discloses an electron thermal radiation detection meter and a producing method thereof. The method includes 1, coating on an SiO2 liner to obtain a PMMA layer; performing electron beam exposure and development on the PMMA layer sequentially to obtain an electrode pattern, and then evaporating an electrode; 2, removing the PMMA layer from the SiO2 liner; transferring a boron nitride-disordered grapheme film, namely a composite film formed by sequentially stacking a boron nitride film and a disordered grapheme film, on the SiO2 liner; arranging the disordered grapheme film on the end face of the SiO2 liner with the evaporated electrode; 3, coating on the boron nitride-disordered grapheme film to obtain a PMMA layer, then obtaining a structure corresponding to the electrode through electron beam exposure and etching sequentially, and obtaining the electron thermal radiation detection meter. Compared with an existing grapheme thermal radiation detection meter produced by using superconducting tunnel junctions, the electron thermal radiation detection meter can operate without extreme low temperature but with an ordinary liquid helium refrigerator, cost is reduced, and operation is very simple.

The invention relates to a catalyst for preparing furfuryl alcohol from furfural through gas-phase hydrogenation. The catalyst contains copper oxide, chromic oxide, potassium carbonate and silicon dioxide, the molar ratio of copper oxide to chromic oxide is (1-5):1, the molar ratio of copper oxide to potassium carbonate is (20-80):1, and the molar ratio of copper oxide to silicon dioxide is (1-20):1. The invention further relates to a preparing method of the catalyst for preparing furfuryl alcohol from furfural through gas-phase hydrogenation and the catalyst prepared through the method and furthermore relates to a method of preparing furfuryl alcohol from furfural through gas-phase hydrogenation. The catalyst used for preparing furfuryl alcohol from furfural through gas-phase hydrogenation and prepared through the method is high in activity and selectivity, high in performance repeatability, easy to apply industrially in a scale-up mode, the preparing method is simple and easy to operate, and waste water polluting the environment is avoided in the catalyst preparing process.

The invention relates to a large-overload stop structure of a diaphragm type pressure signal device, and belongs to aviation airborne technologies. The large-overload stop structure includes a stop plate with a step profile, and a sensing portion of the pressure signal device is composed of a ripple diaphragm and the stop plate; peaks of the ripple diaphragm are in one to one correspondence with steps of the stop plate, and heights of the steps of the stop plate correspond to displacement values of the peaks in the working pressure state of the ripple membrane. The large-overload stop structure has the advantages of compact size, low weight and good stop effect, the overload born by a diaphragm can be removed fully, the overload stress is reduced, and the fatigue life of the diaphragm is improved.

The invention provides a thickness correcting method for a millimeter wave antenna housing. The thickness correcting method is characterized in that firstly, after resin is dissolved, glass cloth is coated with the resin, glass cloth prepreg is manufactured, or after the resin is dissolved, quartz cloth is coated with the resin, and quartz cloth prepreg is manufactured; then, an antenna housing blank is formed through a female die and autoclave molding technology, then the thickness of the wall of the housing is measured, multiple layers of quartz cloth prepreg are laid to enable the thickness of the wall of the housing to reach the regulated wall thickness, and finally a correction layer is cured. The manufactured millimeter wave antenna housing does not need to be ground, the working intensity of manufacture personnel is lowered, the repeatability of product performance is good, and the wave-transparent percent of pass is increased.