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Dielectric ceramic materials for chip capacitor and method for preparing same

A technology of dielectric ceramics and capacitors, applied in the field of chip capacitors, can solve the problems of unfavorable environmental protection, many effective dielectric layers, low dielectric coefficient, etc., achieve the effect of reducing production costs and overcoming the shortcomings of welding and thermal deformation

Inactive Publication Date: 2005-08-17
SOUTH CHINA UNIV OF TECH
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Problems solved by technology

[0006] Commonly used high-frequency thermally stable ceramic dielectric materials are non-ferroelectric materials (NPO characteristics of the EIA standard, or Class I and Group C dielectric materials specified in the national standard GB / T5596). MLCC capacitors made of this type of material have low distortion characteristics, but Due to the low dielectric coefficient of this type of material (10--100), it is mostly used in the manufacture of high-frequency application MLCCs with a capacitance of less than 1000pf (1nf).
The capacitance of capacitors that require low nonlinearity and low distortion factor in coupling circuits mainly ranges from 10nf to 100nf (0.1μf). Commonly used high-frequency thermally stable ceramic dielectric materials are used to manufacture low nonlinearity and low distortion factor in the above capacity range. For chip capacitors, a large number of effective dielectric layers are required, and expensive noble metal internal electrode materials are usually used, so the product manufacturing cost is very high
[0007] Another type of non-ferroelectric high-frequency dielectric material commonly used at present-the temperature characteristic is SL (the Chinese national standard GB / T5596-1996 stipulates that the temperature coefficient of the dielectric coefficient is +140~-1000ppm / degree Celsius), and its room temperature dielectric coefficient It can reach about 300. The ceramic capacitor made of this material has a low distortion factor, but because the material system usually contains Pb and Bi, the use of this type of material is not only not conducive to environmental protection, but also must use noble metal internal electrodes when manufacturing MLCC

Method used

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  • Dielectric ceramic materials for chip capacitor and method for preparing same
  • Dielectric ceramic materials for chip capacitor and method for preparing same

Examples

Experimental program
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Effect test

Embodiment 1

[0055] Principal component expression (Ca 1-x-y Sr x Ba y )(Ti 1-z Zr z )O 3 Among them, x=0.17, y=0.16, z=0.025.

[0056] In the first subcomponent, the amount of MgO added is 1.0mol (based on the main component as 100mol); MnO 2 MnCO 3 Added in the form of 0.15mol.

[0057] Synthesis of CaTiO by High Temperature Solid Phase Synthesis 3 , SrTiO 3 , BaTiO 3 , Ca(Ti 0.8 Zr 0.2 )O 3 .Thereafter according to the principal component expression (Ca 0.67 Sr 0.17 Ba 0.16 )(Ti 0.975 Zr 0.025 )O 3 Stoichiometric ratio batching, mixing, water ball milling, drying, calcining in air at 1250°C, heat preservation for 3 hours, adding water and high-speed stirring ball milling for 5 hours, and drying to obtain the main material. After detection by a laser particle size analyzer, the particle size D50 of the obtained main material particles is ≤ 1.0 μm.

[0058] Production of the third sub-component: the SrCO 3 , CaCO 3 、BaCO 3 , B 2 o 3 , SiO 2 The molar ratio is: 0....

Embodiment 2

[0076] Principal component composition is identical with embodiment 1, and chemical expression is:

[0077] (Ca 0.67 Sr 0.17 Ba 0.16 )(Ti 0.975 Zr 0.025 )O 3 . Using CaCO 3 , SrCO 3 、BaCO 3 , TiO2, ZrO 2 , according to the stoichiometric proportion of the main component, mix and add water ball mill or stir evenly, after drying, calcinate in the air at 1250 ° C, keep warm for 3 hours, add water and high-speed stirring ball mill for 5 hours, and dry to obtain the main component.

[0078] In the first subcomponent, MgO and MnCO 3 The addition amount is shown in Table 3.

[0079] As a second subcomponent, add Y 2 o 3 : 0.4mol%, Dy 2 o 3 : 0.4mol%.

[0080] With the same process of embodiment 1, four kinds of glassy materials with different chemical compositions are made as the third subcomponent, and the chemical composition molar ratios are respectively:

[0081] A: SrCO 3 : CaCO 3 : BaCO 3 :B 2 o 3 : SiO 2 =0.5:0.5:0.5:1.5:1.0

[0082] B: SrCO 3 : CaCO ...

Embodiment 3

[0091] As the first subcomponent, the amount of MgO added is 1.0mol (based on the main component as 100mol); MnO 2 MnCO 3 Added in the form of 0.15mol.

[0092] As a second subcomponent, add Y 2 o 3 : 0.4mol, Dy 2 o 3 : 0.4mol.

[0093] The third subcomponent adopts the glassy material C in embodiment 2, and the addition is 1.5wt%.

[0094] Adjust the principal component expression (Ca 1-x-y Sr x Ba y )(Ti 1-z Zr z )O 3 The value of x, y, z in. Using CaCO 3 , SrCO 3 、BaCO 3 , TiO2, ZrO 2 , according to the stoichiometric ratio determined by the x, y, z values ​​in Table 5, after mixing, add water to ball mill or stir evenly, after drying, calcinate in the air at 1250 ° C, keep warm for 3 hours, add water to high-speed stirring ball mill for 5 hours, and dry to obtain 5 principal components.

[0095] The above 5 main components are used to add the first subcomponent, the second subcomponent and the third subcomponent respectively in proportion, add water, mix ...

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Abstract

The present invention provides the preparation process of dielectric ceramic material for low voltage non-linear chip capacitor. The preparation process includes the following steps: 1) preparing glass state material as the third auxiliary component with SrO, CaO, BaO, B2O3 and SiO2 in the molar ratio of 0.5 to 0.5 to 0.2-0.5 to 1.0-2.0 to 0.5-1.0; 2) preparing the main component in the chemical expression of (Ca1-x-ySrxBay)(Ti1-zZrz)O3, where, x is 0.15-0.19, y is 0.14-0.18 and z is 0-0.04; 3) mixing homogeneously the main component, the first auxiliary component (MgO in 0.8-1.5 mol% and MnO2 in 0.1-0.2 mol%), the second auxiliary component (RE oxide Re2O3 in 0.4-1.5 mol%) and the third auxiliary component to obtain the dielectric ceramic material of the present invention. The dielectric ceramic material may be used in producing inner nickel electrode type ceramic capacitor with very low voltage non-linearity of capacitance.

Description

technical field [0001] The invention relates to chip capacitor technology, in particular to a dielectric ceramic material for chip capacitors that can be co-sintered with base metal inner electrode materials in a reducing atmosphere and has very small capacitor voltage nonlinearity. [0002] The invention also relates to a preparation method of the dielectric ceramic material. Background technique [0003] In order to adapt to the development direction of high performance, low cost and miniaturization of electronic products, the capacitors used are required to continue to develop in the direction of miniaturization, large capacity, high performance, high reliability and low cost. As the operating speed of the computer central processing unit (CPU) continues to increase and its power supply voltage decreases, the distortion requirements for capacitors used in the peripheral circuits of the CPU increase accordingly; in addition, mobile communication equipme...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/622H01G4/12
Inventor 卢振亚
Owner SOUTH CHINA UNIV OF TECH
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