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Adhesive film, lead frame with adhesive film, and semiconductor device using same

A technology for bonding films and lead frames, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem that semiconductor chips and lead frames cannot be electrically bonded, and achieve excellent bonding workability and easy control , Excellent reliability

Inactive Publication Date: 2005-11-16
HITACHI CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the resin becomes soft at the wire bonding temperature, there is a problem that the semiconductor chip and the lead frame cannot be electrically bonded during wire bonding in the semiconductor package manufacturing process.

Method used

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  • Adhesive film, lead frame with adhesive film, and semiconductor device using same
  • Adhesive film, lead frame with adhesive film, and semiconductor device using same
  • Adhesive film, lead frame with adhesive film, and semiconductor device using same

Examples

Experimental program
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Effect test

manufacture example 1

[0111] Put and dissolve 1.83 g (5 mmol) of 4,4'-diamino-3,3',5,5'-tetraisopropyl in a four-necked flask equipped with a stirrer, a thermometer, a nitrogen inlet tube, and a calcium chloride tube Diphenylmethane (IPDDM), 2.05 g (5 mmol) 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP) and 28.3 g N-methyl-2-pyrrolidone (NMP). Next, 2.08 g (9.9 mmol) of trimellitic anhydride monochloride was added while cooling so as not to exceed 20°C. After stirring at room temperature for 1 hour, 1.11 g (11 mmol) of triethylamine was added while cooling, and it was made to react at room temperature for 3 hours, and polyamic acid was synthesize|combined. Furthermore, the obtained polyamic acid varnish was reacted at 190 degreeC for 6 hours, and the polyamide-imide was synthesize|combined. The precipitate obtained by pouring the obtained polyamideimide varnish into water was separated, pulverized, and dried to obtain a polyamideimide copolymer powder.

[0112] The weight average molecular weigh...

manufacture example 2

[0116] Put 175.2g (0.6mol) 1,3-bis(3-aminophenoxy)benzene (APB), 352g (0.40mol ) siloxane diamine (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: X-22-161AS) was dissolved in 2400 g of ethylene glycol dimethyl ether. The solution was then cooled to -10° C., at which temperature 213 g (1.00 mol) of trimellitic anhydride monochloride (TAC) were added. After stirring at room temperature for 1 hour, 115 g of triethylamine was added while cooling so that it would not exceed 20° C., and it was reacted at room temperature for 3 hours to synthesize a polyamic acid. Furthermore, the obtained polyamic acid varnish was reacted at 190 degreeC for 6 hours, and the polyamide-imide was synthesize|combined. The obtained reaction liquid was poured into methanol, and polyamide-imide was isolate|separated. After drying this, it melt|dissolved in dimethylformamide, and poured into methanol, and polyamide-imide was isolate|separated again. Thereafter, drying under reduced pressure wa...

manufacture example 3

[0119] In a 5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen inlet tube, and a fractionation tower, 233.6 g (0.8 mol) of APB, 176 g (0.20 mol) of siloxane diamine (Shin-Etsu Chemical Co., Ltd. Co., Ltd. product name: X-22-161AS), dissolved in 2000 g of ethylene glycol dimethyl ether. The solution was then cooled to -10° C., at which temperature 213 g (1.00 mol) of trimellitic anhydride monochloride (TAC) were added. After stirring at room temperature for 1 hour, 115 g of triethylamine was added while cooling so that it would not exceed 20° C., and it was reacted at room temperature for 3 hours to synthesize a polyamic acid. Furthermore, the obtained polyamic acid varnish was reacted at 190 degreeC for 6 hours, and the polyamide-imide was synthesize|combined. The obtained reaction liquid was poured into methanol, and polyamide-imide was isolate|separated. After drying this, it melt|dissolved in dimethylformamide, and poured into methanol, and polya...

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Abstract

The present invention provides an adhesive film that combines low temperature adhesion with favorable wire bonding characteristics. The adhesive film used for bonding a semiconductor element to a target adherend comprises an adhesive layer formed on one surface, or both surfaces, of a heat resistant film, the adhesive layer comprises a resin A and a resin B, a glass transition temperature of the resin A is lower than a glass transition temperature of the resin B, and the adhesive layer has a sea-island structure, in which the resin A forms the sea, and the resin B forms the islands.

Description

technical field [0001] The present invention relates to an adhesive film, a lead frame with the adhesive film, and a semiconductor device using the adhesive film and the lead frame. Background technique [0002] In recent years, semiconductor chips have been increasing in size due to their higher performance and higher capacity. On the other hand, the size of the package containing the semiconductor chip is required to have a small outline due to constraints on the design of the printed circuit board and the demand for miniaturization of electronic equipment. In order to cope with this trend, some new packaging methods that are suitable for high-density semiconductor chips and high-density packaging have been proposed. For example, in memory elements, LOC structures in which leads are bonded on a designed chip, or CSPs such as μ-BGA, FBGA, BOC using thin films or organic substrates instead of lead frames, or stacked types of chip stacked structures are known. encapsulation...

Claims

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Application Information

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IPC IPC(8): C09J177/00
CPCH01L2924/12044H01L24/29H01L2224/32245H01L2224/45144H01L2224/48091H01L2224/4826H01L2224/73215H01L2224/83101
Inventor 松浦秀一楯冈圣秀名儿耶友宏田边义行
Owner HITACHI CHEM CO LTD
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