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Thin film coating device, thin film coating method, immersion exposure device, and immersion exposure method

A thin film coating and liquid technology, which is applied in the direction of photolithographic exposure device, surface coating liquid device, microlithography exposure equipment, etc., to achieve the effect of realizing yield, shortening operation time and improving work rate

Inactive Publication Date: 2005-12-14
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, there is a delay in the capacity between the particle measuring device 119 and the dripping nozzle 107.

Method used

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  • Thin film coating device, thin film coating method, immersion exposure device, and immersion exposure method
  • Thin film coating device, thin film coating method, immersion exposure device, and immersion exposure method
  • Thin film coating device, thin film coating method, immersion exposure device, and immersion exposure method

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no. 1 Embodiment approach

[0081] Hereinafter, a first embodiment of the present invention will be specifically described with reference to the drawings.

[0082] figure 1 , is a configuration diagram schematically showing the film coating apparatus according to the first embodiment of the present invention. The thin film coating apparatus of the present invention includes a wafer rotation mechanism 2 that supports and rotates a wafer 1 horizontally, and a chemical solution coating mechanism 20 that transfers and drops a chemical solution 3 . The wafer rotation mechanism 2 has a wafer chuck 4 and a motor flange 5 that rotates the wafer chuck 4 . In the chemical solution coating mechanism 20, a dripping nozzle 6 that drips the chemical solution 3 to the wafer 1, a conduit 7 that connects the dripping nozzle 6 and a supply source (not shown) of the chemical solution 3, and a pipeline installed in the conduit 7 In the middle, the pump 8, the particle filter device 9, the microparticle measuring device 1...

no. 2 Embodiment approach

[0096] Hereinafter, a second embodiment of the present invention will be specifically described with reference to the drawings.

[0097] Figure 8 , is a schematic diagram showing the configuration of an exposure apparatus using the liquid immersion exposure method in the second embodiment. Figure 8 In the exposure device shown, the illumination optical system 31 includes an exposure light source formed by an argon fluorine excimer laser or a krypton fluorine excimer laser, an optical integrator, a focusing knob, and a condenser lens. The exposure light 32 irradiated from the illumination optical system 31 is fixed by the index mirror support table 34 , and the pattern of the index mirror 33 passes through the lens barrel 35 and the projection optical system lens 36 , and is projected in reduced size on the wafer 38 coated with a photomask.

[0098] A wafer 38 is placed on a wafer support table 39, and a liquid 37 such as pure water is filled between the wafer 38 and the pro...

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PUM

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Abstract

A thin film coating device and its method and a liquid immersion exposure device and its method form a high-quality resist pattern without defects. The chemical liquid (3) supplied from the liquid supply source through the particle filter device (9) is dripped onto the wafer surface from the dripping nozzle (6). A particulate measuring device (13) for measuring the amount of particulate matter such as bubbles or particles contained in the chemical solution (3) is installed on the pipeline between the particle filtering device (9) and the dripping nozzle (6). Furthermore, a computing device (16) is provided that constantly collects the control voltage value of the electromagnetic control valve (10) for opening and closing the catheter and the measured value of the particle measuring device (13), and performs calculations. The arithmetic unit (16) calculates the number of particulate matter contained in the chemical solution applied to one wafer, and compares the number of particulate matter with a standard value to determine whether to stop the thin film coating device.

Description

technical field [0001] The present invention relates to a thin film coating device and a liquid immersion exposure device for forming a resist pattern on a wafer when manufacturing a semiconductor. Background technique [0002] In the past, in the optical lithography process for manufacturing semiconductor wafers, carry out: 1) the resist coating process of coating photoresist on the surface of the wafer to form a resist film of uniform thickness, 2) make the photoresist mixed in the photoresist The solvent in the resist evaporates and hardens the resist film, which improves its adhesion to the base layer and improves the photochemical reactivity. 3) Printing on the resist film by irradiating ultraviolet rays to the wafer through a photomask The exposure process of designing the pattern, 4) the development process of dissolving the photoresist in the unexposed part with the developing solution to form the pattern of the photoresist, 5) the hardening of the photoresist that h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05C11/00B05D1/12G03F7/16G03F7/20
CPCG03F7/162G03F7/70341D05B29/02D05B29/06D05B35/08D05B19/02
Inventor 北端匡树今井伸一
Owner PANASONIC CORP