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Method for preparing four needle shape zinc oxide nano stick by low temperature catalyst-free gas phase deposition

A four-needle zinc oxide, vapor deposition technology, applied in the direction of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of high preparation temperature and product purity, and achieve the guarantee of uniformity, purity and performance Effect

Inactive Publication Date: 2011-01-19
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

[0004] So far, although there have been multiple methods for preparing tetraacicular ZnO nanorods, the various existing methods have their own shortcomings, such as when using a catalyst for preparation, although the preparation temperature is low, the purity of the product is affected; and The preparation temperature of the vapor phase deposition method without catalyst is too high

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  • Method for preparing four needle shape zinc oxide nano stick by low temperature catalyst-free gas phase deposition
  • Method for preparing four needle shape zinc oxide nano stick by low temperature catalyst-free gas phase deposition

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Embodiment Construction

[0025] Tube furnace specifications: length 75cm, tube diameter 40mm, quartz tube tube length 100cm, inner diameter 30mm.

[0026] The tetraacicular ZnO nanorods prepared under the following experimental conditions have good surface quality, regular shape, and the highest yield:

[0027] Rinse the silicon (100) substrate with deionized water and alcohol, respectively, as a deposition substrate; place Zn powder (passed through a 53 μm sieve, with a purity >99.9%) in a porcelain boat, and then place the silicon substrate upside down on the porcelain On the boat; put the porcelain boat into the middle of the quartz tube in the tube furnace, and use a flowmeter to adjust the total flow of argon and oxygen into the quartz tube and the ratio of the two gases. In this atmosphere, raise the temperature of the tube furnace to the synthesis temperature of 600°C, 650°C, and 700°C, and then keep it warm for 20 minutes. After that, take out the silicon wafer, and the white fluff deposited o...

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Abstract

The present invention provides low temperature no-catalyst vapor deposition process for preparing four needle shape nanometer zinc oxide rod, and belongs to the field of nanometer material preparing technology. The technological process includes the following steps: rinsing silicon (100) chip for deposition with deionized water and alcohol separately; setting Zn power inside ceramic boat, covering the ceramic boat with silicon chip, setting the ceramic boat in the middle part of quartz tube inside furnace, regulating the total flow rate and ratio of Ar and O2 to the quartz tube, heating at 600-700deg.c for 20-25 min to deposit white mossy matter as the four needle shape nanometer zinc oxide rod product. The present invention has the advantages of high product quality, good control performance, rich shapes and large scale production foreground.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanomaterials, and in particular provides a method for preparing tetraacicular zinc oxide nanorods by vapor deposition at low temperature without a catalyst, and realizes a wide range of controllable nanorods at a low preparation temperature without a catalyst. grow. Background technique [0002] Zinc oxide is a wide bandgap II-VI compound semiconductor. The bandgap of ZnO is about 3.3eV at room temperature, and it has high light transmittance in the visible range. Compared with GaN, a wide-bandgap semiconductor, ZnO is cheap and has sufficient raw materials. The exciton binding energy (60meV) and optical gain coefficient (300cm) are higher than those of GaN (25meV.100cm), and the light emission intensity is greater than that of GaN phonons. Optical materials, composite materials, sensors, catalysts, etc. have broad application prospects. The optical properties of materials depend on size...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00C23C16/455
Inventor 张跃戴英黄运华贺建刘娟张晓梅齐俊杰廖庆亮
Owner UNIV OF SCI & TECH BEIJING
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