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Method of mfg. lower substrate of LCD device by using three masks

A technology of a liquid crystal display device and a manufacturing method, which is applied in the photolithography process exposure device, semiconductor/solid-state device manufacturing, optics, etc., can solve the problems of expensive lithography process and the like

Active Publication Date: 2006-09-20
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, in the manufacture of thin film transistor liquid crystal display panels, because the photolithography process is very expensive, there is an urgent need for a thin film transistor array substrate process that can reduce mask passes

Method used

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  • Method of mfg. lower substrate of LCD device by using three masks
  • Method of mfg. lower substrate of LCD device by using three masks
  • Method of mfg. lower substrate of LCD device by using three masks

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Embodiment 1

[0018] Please refer to FIGS. 1( a ) to 1 ( h ), which are schematic flowcharts of the method according to the first embodiment of the present invention.

[0019] The thin film transistor (TFT) formed by the method of this embodiment is an island-shaped bottom gate type thin film transistor. As shown in FIG. 1( a ), a substrate 30 is first provided, wherein the substrate 30 can be glass, quartz or plastic. Next, a patterned first metal layer 32 , an insulating layer 34 , a semiconductor layer 36 and an ohmic contact layer 38 are sequentially formed on the substrate 30 . The first metal layer 32 is used as the gate of the thin film transistor (TFT), and another part of the first metal layer 32 is used as an electrode of an auxiliary capacitor. The material of the first metal 32 can be aluminum (Al), tungsten (W), chromium (Cr), copper (Cu), titanium (Ti), titanium nitride (TiNx), aluminum alloy, chromium alloy or molybdenum (Mo). ) single-layer or multi-layer structure compose...

Embodiment 2

[0029]The steps and materials of the method of this embodiment are the same as those of the first embodiment, except that the source / drain shape of the thin film transistor is different from that of the first embodiment. The thin film transistor of this embodiment is a U type thin film transistor. The U-shaped thin film transistor and other related components formed by the method of the present invention can effectively increase the Ion current and the aperture ratio of the thin film transistor. Similarly, the manufacturing method of this embodiment only needs to perform patterning processes such as photolithography and etching of three masks to complete the manufacture of the lower substrate for the liquid crystal display device and achieve the effect of improving the yield of the substrate. Various liquid crystal display devices also achieve the benefit of ensuring display quality.

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Abstract

The invention discloses a method for making lower substrate of a liquid crystal unit by three masks, comprising the steps of: forming in turn a first patternized metal layer, an insulating layer, a semiconductor layer and a second metal layer on a substrate; using primary exposure-development process to make the second metal layer have different thicknesses; forming a flat layer on the second metal layer and etching the flat layer to partially expose the second metal layer; and finally forming a patternized transparent electrode layer on the second metal layer. It can reduce manufacturing time.

Description

technical field [0001] The invention relates to a manufacturing method of a lower substrate for a liquid crystal display device, in particular to a manufacturing method of a lower substrate for a liquid crystal display device manufactured by using a three-pass mask process. Background technique [0002] Compared with the traditional picture tube monitor, the liquid crystal display device has the advantages of low power consumption, small size and no radiation. However, the thin film transistor liquid crystal display (TFT-LCD) is expensive, especially in the lithography step process of the thin film transistor array of the liquid crystal display, because the number of required masks cannot be effectively reduced as much as possible, and it is impossible to reduce the number of masks as much as possible. manufacturing cost. [0003] Among the known manufacturing methods of thin film transistor array substrates, five mask (photolithography) processes are more common. Wherein,...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/027G02F1/1333G02F1/136
Inventor 李奕纬朱庆云
Owner AU OPTRONICS CORP