Semiconductor device and manufacturing method of the same
A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as unobtainable, unavailable LDD, parasitic resistance, etc., and achieve the effects of improving yield, suppressing short channel effect, and high reliability
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Embodiment approach 1
[0073] Refer to the following Figure 1A - 1D, 2A-2H, 3A-3D, 4A-4C to describe the semiconductor device manufacturing method according to Embodiment 1. The TFT used in the semiconductor device of this embodiment has a Lov region and an Loff region as LDD regions.
[0074] First, base insulating film 12 is formed on substrate 11 to a thickness of 100-300 nm. As the substrate 11, an insulating substrate such as a glass substrate, a quartz substrate, a plastic substrate, or a ceramic substrate; a metal substrate; a semiconductor substrate; and the like can be used.
[0075] Silicon oxide (SiOx), silicon nitride (SiNx), silicon oxide containing nitrogen (SiOxNy) (x > y) (also called silicon oxynitride), or silicon nitride containing oxygen (SiNxOy) (x >y) (also referred to as silicon oxynitride) or a single-layer structure of an insulating film containing oxygen or nitrogen, or a stacked layer structure thereof, to form the base insulating film 12 . Specifically, when impuritie...
Embodiment approach 2
[0121] In this embodiment, a method of manufacturing a semiconductor device having only the Lov region is described with reference to FIGS. 5A to 5F. Also, in this embodiment, the same reference numerals are used for the same parts as in Embodiment 1, and detailed explanation thereof is omitted.
[0122] In this embodiment, a TFT is manufactured through the same steps as in Embodiment 1 up to FIG. 2A. Subsequently, using the first electrode 20 as a mask, doping with impurity ions 32 is performed to form high-concentration impurity regions 52a and 52b (FIG. 5A). In addition, the doping of impurity ions 32 for forming a high-concentration impurity region and the doping of impurity ions 27 for forming a low-concentration impurity region may be performed in reverse order; 27 doping, so as to obtain the state of Figure 5A. Alternatively, the doping of the impurity ions 27 may be omitted and only the doping of the impurity ions 32 may be performed. When doping of impurity ions 32...
Embodiment 3
[0132] In this embodiment, a method of manufacturing a semiconductor device having only the Loff region is described with reference to FIGS. 6A to 6F. Also, in this embodiment, the same reference numerals are used for the same parts as in Embodiments 1 and 2, and detailed explanation thereof is omitted.
[0133] Up to FIG. 5A , the same steps as Embodiment 2 are performed, and low-concentration impurity regions 24 a and 24 b , high-concentration impurity regions 52 a and 52 b , and channel formation region 26 are formed in island-shaped semiconductor film 13 . Then, using the second gate electrode 22 as a mask, dry etching is performed to etch the first gate electrode and the gate insulating film 14 to have the same width as the gate length of the second gate electrode. With this etching, the third gate electrode 62 and the gate insulating film 61 are formed, and part of the island-like semiconductor film 13 is exposed (FIG. 6A).
[0134] Subsequently, an insulating film is d...
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