Process for electrochemical deposition preparation of solar cell film materials

A technology for solar cells and thin film materials, applied in sustainable manufacturing/processing, circuits, electrical components, etc., can solve problems such as difficulty in uniformity control, and achieve the effects of low cost, easy process control, and high raw material utilization.

Inactive Publication Date: 2006-10-11
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Application Information

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Problems solved by technology

At present, the most widely used physical vapor deposition method is used in CuIn (1-x) Ga x Se 2 There are outstanding advantages in the study of thin film growth mechanism, and the control of the stoichiometric ratio of the thin film is relatively straightforward. However, in the evaporation deposition process of the physical vapor deposition method, the anti-evaporation process occurs simultaneously. When the substrate area increases, the anti-evaporation effect Make it very difficult to control the uniformity of each component

Method used

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  • Process for electrochemical deposition preparation of solar cell film materials
  • Process for electrochemical deposition preparation of solar cell film materials
  • Process for electrochemical deposition preparation of solar cell film materials

Examples

Experimental program
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Embodiment 1

[0011] with CuCl 2 , InCl 3 , GaCl 3 , H 2 SeO 3 As raw material, proportional to 0.012mol / LCuCl 2 , 0.025mol / LInCl 3 , 0.025mol / LGaCl 3 , 0.025mol / LH 2 SeO 3 , ethanol is the solvent preparation electrodeposition solution (electrolyte solution), after the material in the solution dissolves completely, add dilute nitric acid to PH=1.5, pass into argon 30 minutes; Adopt three-electrode system, the solution prepared by the above method is Electrodeposition solution, platinum mesh as anode, molybdenum sheet as cathode, calomel saturated electrode as reference electrode, deposition voltage is -5.5V (VS.SCE), deposition time is 10 minutes, and finally dried with argon to obtain CuIn 1-x Ga x Se 2 Precursor thin film; put the above thin film into a tube furnace, and in an argon protective atmosphere, raise the temperature to 450°C at a rate of 10°C per minute and keep it warm for 30 minutes. After the heat preservation is over, cut off the power supply and cool down natura...

Embodiment 2

[0013] with CuCl 2 , InCl 3 , GaCl 3 , H 2 SeO 3 As raw material, proportional to 0.012mol / LCuCl 2 , 0.020mol / LInCl 3 , 0.020mol / LGaCl 3 , 0.025mol / LH 2 SeO 3 , dimethyl sulfoxide is used as a solvent to prepare an electrodeposition solution (electrolyte solution). After the substances in the solution are completely dissolved, dilute nitric acid is added dropwise to PH=2, and argon gas is passed into it for 30 minutes; a three-electrode system is used to prepare the above-mentioned method. The solution obtained is the electrodeposition solution, the platinum mesh is the anode, the stainless steel sheet is the cathode, the calomel saturated electrode is the reference electrode, the deposition voltage is -5.5V (VS.SCE), the deposition time is 10 minutes, and finally blown with argon CuIn 1-x Ga x Se 2 Precursor thin film; put the above thin film into a tube furnace, and in an argon protective atmosphere, raise the temperature to 450°C at a rate of 10°C per minute and ...

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Abstract

This invention discloses a solar battery film material of the CuIn(1-x)GaxSe2 preparation technology. This invention uses Cu,In,Ga metal salt and sub-selenic acid as main material, and the organic agent can dissolve in alcohols as electrolyte; and it uses metal molybdenum sheet or stainless steel sheet as cathode, platinum titanium metal net as assistant electrode, calomel saturated electrode as the vs-electrodes; the constant electric potential deposition prepares CuIn(1-x)GaxSe2 film front driving part, then it obtain CuIn(1-x)GaxSe2 film after cleaning, drying, heat dealing under argon. The advantage in this invention is that the material using rate is high, the technology is easy to control.

Description

technical field [0001] The invention relates to a photoelectric conversion material for a thin-film electropositive cell, in particular to a CuIn (1-x) Ga x Se 2 Electrochemical deposition preparation process of thin film materials for solar cells. Background technique [0002] Solar energy has irreplaceable advantages in environmental protection and sustainable development. In recent years, the development of thin-film solar cells with direct bandgap materials has become a new research focus. Thin-film solar cells can achieve high-efficiency photoelectric conversion with only a few microns thick, which is an ideal device for reducing costs and improving photon circulation. In thin film solar cell research, CuIn (1-x) Ga x Se 2 Thin-film cells have become one of the most promising thin-film photovoltaic devices because of their low cost (only 1 / 10 of crystalline silicon solar cells), high conversion efficiency (up to 19.3% at present), and good stability. However, CuI...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/56H01L31/18
CPCY02P70/50
Inventor 龙飞邹正光李建军
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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