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Monochip integrating method for electric absorbing modulator of light amplifier and moulding spot converter

A technology of electro-absorption modulator and mode-spot converter, which is applied in semiconductor/solid-state device manufacturing, optics, instruments, etc., can solve the problems of many epitaxy times, complex manufacturing process, high cost, etc., and achieve the improvement of TM mode gain and internal quantum High efficiency and the effect of reducing the number of growth

Inactive Publication Date: 2006-11-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the production process is more complicated, the number of epitaxy is more, and the cost is high; the quality of the crystal at the junction of the amplifier, modulator, and mode-spot converter is poor, and it is difficult to obtain a docking waveguide with high coupling efficiency
Compared with the ridge waveguide structure, the buried structure has more epitaxy times, and the manufacturing process is more complicated.

Method used

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  • Monochip integrating method for electric absorbing modulator of light amplifier and moulding spot converter
  • Monochip integrating method for electric absorbing modulator of light amplifier and moulding spot converter
  • Monochip integrating method for electric absorbing modulator of light amplifier and moulding spot converter

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Embodiment Construction

[0076] The invention relates to a method for monolithic integration of an optical amplifier electro-absorption modulator and a mode-spot converter, comprising the following fabrication steps:

[0077] (1) The 2-inch n-InP substrate undergoes strict decontamination (using ethanol, trichloroethylene, acetone, and ethanol to heat and boil in sequence) → pickling (soaked in concentrated sulfuric acid for 1-2 minutes) → water washing (deionized water rinse More than 50 times) → After the drying treatment, put it into a growth chamber, the growth temperature is 655 ° C, the growth pressure is 22 mbar, and the speed of the graphite boat is 75 to 80 rpm. Growth rate 0.4~0.7nm / s;

[0078] (2) Epitaxial growth of n-type indium phosphide buffer layer (0.5μm thick), lower waveguide layer (50nm thickness, band gap wavelength of 1.1μm), 0.2μm phosphide on the n-type indium phosphide substrate (100) surface Indium space layer, thin 1.1Q layer (30nm);

[0079] (3) Using PECVD technology to ...

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Abstract

A method for single sheet integrated component of SOA+EA+SSC includes applying three times of LP-MOVPE on said component as one time being a selective epitaxial growth, obtaining different growth rate at SOA and at EA as SOA being rich In growth with growth rate greater than EA region and band gap width less than EA region when selective epitaxial growth is applied, selecting different mask width and different growth pressure as well as temperature to obtain wavelength offset regulation amount required by user.

Description

technical field [0001] The invention relates to the fabrication of a semiconductor optical amplifier electro-absorption modulator and a mode spot by adopting the commonly used wet etching and photolithography techniques through Selected Area Growth (SAG), Quantum Well Hybrid (QWI) and Asymmetric Dual Waveguide (ATG) technologies. A method for monolithic integration of devices for converters. Background technique [0002] With the development of the modern information society, the high-speed transmission, processing and storage of super-large capacity and long-distance information is a very critical technology. Whether it is a trunk network for long-distance communication, a wide area network, or a local area network for short-distance communication, access network, and short-distance data connection optical switching, a large number of high-performance and low-cost optoelectronic devices are required to support the network functions. WDM technology and OTDM technology are t...

Claims

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Application Information

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IPC IPC(8): G02F1/39G02B6/13G03F7/20H01L21/027
Inventor 侯廉平王圩朱洪亮周帆
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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