Method and device with durable contact on silicon carbide

A technology of silicon carbide and silicon carbide layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of easy degradation of Schottky contacts, achieve high current intensity, solve the problems of easy degradation, and improve performance Effect

Active Publication Date: 2007-05-09
FAIRCHILD SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The present invention solves the problem of easy degradation of Schottky contacts by providing durable and longer-lasting silicon carbide Schottky barrier diodes or metal-semiconductor field effect transistors

Method used

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  • Method and device with durable contact on silicon carbide
  • Method and device with durable contact on silicon carbide
  • Method and device with durable contact on silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Termination-free Schottky diodes were fabricated on a 16 μm thick, 1.1E16cm -3 The N-type lightly doped silicon carbide epitaxial layer is carried out on the N-type heavily doped silicon carbide bottom layer EE15. On the heavily doped side of the bottom layer, an ohmic contact was made by depositing a layer of nickel to a thickness of 2500 Angstroms and vacuum annealing. On top of the epitaxial layer, a layer of rhenium with a thickness of 500 Angstroms was deposited by electron beam evaporation. The rhenium layer was patterned and etched, resulting in a 1.77E-4cm 2 positive pole. The volt-ampere characteristics of the final diode were measured by a Tektronix Model 577 waveform recorder. At a forward current of 0.7A, that is 4000A / cm 2 Under the current density, the diode still keeps working normally.

Embodiment 2

[0042] Termination-free Schottky diodes were fabricated on a 4.8 μm thick, 9.3E15 cm -3 The N-type lightly doped silicon carbide epitaxial layer is carried out on the N-type heavily doped silicon carbide bottom layer GB9. On the heavily doped side of the bottom layer, an ohmic contact was made by depositing a layer of nickel to a thickness of 2500 Angstroms and vacuum annealing. On the epitaxial layer, a 2500 Angstrom layer of rhenium was deposited by radio frequency magnetron sputtering. The rhenium layer was patterned and etched, yielding a 2.475E-4cm 2 positive pole. Finally the diode was reverse biased and the volt-ampere characteristics were measured.

[0043] Hatakayama (References 5, 6) argues that SiC Schottky diodes have reverse leakage current due to the tunneling effect at the metal-semiconductor junction which depends on the exponential relationship of electric field strength. Leakage current often limits the performance of the component before avalanche breakdow...

Embodiment 3

[0045] Schottky diodes with capped termination fields were fabricated on a 5 μm thick layer with a concentration of 1.1E16 cm -3 A three-layer N-type heavily doped SiC underlayer of a lightly doped SiC epitaxial layer is performed. On the heavily doped side of the bottom layer, an ohmic contact was made by depositing a layer of nickel to a thickness of 2500 Angstroms and vacuum annealing. The terminal field passes through with Ar + The beam is established by ion etching all surfaces of each wafer, the Ar + Ion beam energies vary, ranging from 250eV to 500eV. On the ion-etched surface of each wafer, a 2500 Angstrom layer of rhenium was deposited by radio frequency magnetron sputtering. The rhenium layer was patterned and etched, yielding a 4.9E-3cm 2 positive contact area. The volt-ampere (IV) characteristics of the final diode are then measured.

[0046] These diodes are rectifier diodes. The diode barrier heights measured from the voltammetry (IV) data are listed in Ta...

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Abstract

A Schottky baroer silicon carbide device has a Re Schottky metal contact. The Re contact (27) is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region around the Schottky contact.

Description

technical field [0001] The present invention relates to a semiconductor device processing method, in particular, to a Schottky contact method for providing a compound semiconductor layer used in a semiconductor device. Background technique [0002] The fabrication and operating principles of diodes (junction and Schottky) and basic transistor devices are well known. The use of new technologies places higher speed and power requirements on transistors and requires them to be able to withstand extreme application conditions such as high temperature, high current and strong radiation. Silicon carbide devices have the potential to meet these conditions, but have not been successfully commercialized so far. One of the barriers to using silicon carbide in electronic devices is the difficulty of providing reliable and durable electrical contact methods for the device. [0003] Whether it is a metal or a semiconductor in close contact, there is a contact barrier between the two, p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/095H01L31/0256H01L21/04H01L29/24H01L29/47H01L29/812H01L29/872H01L31/0312
CPCH01L29/66068H01L29/6606H01L29/1608H01L29/47H01L29/872H01L21/0495H01L29/812Y10S438/931
Inventor 威廉·F·森理查德·L·伍丁
Owner FAIRCHILD SEMICON CORP
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